View APT20GF120SRDQ1G_593562.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TYPICAL PERFORMANCE CURVES (R)
1200V APT20GF120B_SRDQ1(G) APT20GF120BRDQ1 APT20GF120SRDQ1 APT20GF120BRDQ1G* APT20GF120SRDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz * Ultra Low Leakage Current
G C E
(B)
TO -2 47
D3PAK
C G E
(S)
* Ultrafast Soft Recovery Anti-parallel Diode
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT20GF120B_SRDQ1(G) UNIT Volts
1200 30 36 20 64 64A @ 1200V 200 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 600A) Gate Threshold Voltage (VCE = VGE, I C = 600A, Tj = 25C) MIN TYP MAX Units
1200 4.5 5.5 2.7 3.3 1
2 2
6.5 3.2
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
mA nA
10-2005 052-6279 Rev A
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
6
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT20GF120B_SRDQ1(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 15A TJ = 150C, R G = 4.3, VGE = Inductive Switching (25C) VCC = 800V VGE = 15V RG = 4.3 I C = 15A VGE = 15V MIN TYP MAX UNIT pF V nC
1090 125 65 10.5 100 12 65 64 10 9 120 95 895 850 840 10 9 145 110 865 1480 1058 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 1200V
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 800V VGE = 15V RG = 4.3 I C = 15A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.63 1.18 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.)
10-2005
5 Eon2 is loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6279
Rev A
TYPICAL PERFORMANCE CURVES
60 50 TJ = 25C 40 30 TJ = 125C 20 10 0
V
GE
= 15V
80 70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0
APT20GF120B_SRDQ1(G)
15V
TJ = -55C
IC, COLLECTOR CURRENT (A)
13V 12V 11V
10V
9V 8V 7V
60 50
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 15A C T = 25C
J
0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 240V
IC, COLLECTOR CURRENT (A)
TJ = -55C
40 30 20
VCE = 600V
8 6 4 2 0 0 20
VCE = 960V
TJ = 25C
10
TJ = 125C
0 0 2 4 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge
120
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
5
IC = 30A
IC = 15A
4
IC = 30A
IC = 15A
3
2
IC = 7.5A
IC = 7.5A
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 50
0
0
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
45 40 35 30 25 10-2005 052-6279 Rev A 20 15 10 5 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
(NORMALIZED)
12 10 8 6 4 2 T = 25C, or 125C J 35 30 25 20 15 10 5 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 40 35 30
RG = 4.3, L = 100H, VCE = 800V VCE = 800V RG = 4.3 L = 100H
180
APT20GF120B_SRDQ1(G)
VGE = 15V
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
160 140 120 100 80 60 40 20 0
VCE = 800V RG = 4.3 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C
0
35 30 25 20 15 10 5 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
120 100
RG = 4.3, L = 100H, VCE = 800V
tf, FALL TIME (ns)
tr, RISE TIME (ns)
25 20 15 10 5 35 30 25 20 15 10 5 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 0
TJ = 25 or 125C,VGE = 15V
80 60 40 20 0
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
35 30 25 20 15 10 5 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
2500
3500 3000 2500 2000 1500 1000 500 0
EOFF, TURN OFF ENERGY LOSS (J)
EON2, TURN ON ENERGY LOSS (J)
= 800V V CE = +15V V GE R = 4.3
G
V = 800V CE V = +15V GE R = 4.3
G
2000
TJ = 125C
TJ = 125C
1500
1000
TJ = 25C
500
TJ = 25C
35 30 25 20 15 10 5 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 9000
35 30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
V = 800V CE V = +15V GE R = 4.3
G
0
SWITCHING ENERGY LOSSES (J)
J
7000 6000 5000 4000 3000 2000 1000 0 0
Eon2,7.5A
SWITCHING ENERGY LOSSES (J)
8000
V = 800V CE V = +15V GE T = 125C
Eon2,30A
3500 3000 2500 2000 1500 1000 500 0
Eon2,30A Eoff,30A
10-2005
Eoff,30A Eoff,15A Eon2,15A
Eon2,15A Eoff,15A
Eon2,7.5A
Eoff,7.5A
Rev A
Eoff,7.5A
052-6279
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
2,000 1,000 C, CAPACITANCE ( F) 500 IC, COLLECTOR CURRENT (A) Cies
70 60 50 40 30 20 10
APT20GF120B_SRDQ1(G)
P
100 50
Coes Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
PDM
0.3
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
120 100 FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp. (C) 0.316 Power (watts) 0.313 Case temperature. (C) 0.148 0.00468
50
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.3
G
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
0
052-6279
Rev A
10-2005
APT20GF120B_SRDQ1(G)
APTXXXXXXX
Gate Voltage
10% td(on) TJ = 125C
V CC
IC
V CE
tr 90% 5% 10%
Collector Current
5%
A D.U.T.
Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
td(off) 90% tf 10%
TJ = 125C
Collector Voltage
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6279
Rev A
10-2005
TYPICAL PERFORMANCE CURVES
APT20GF120B_SRDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 127C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 15A Forward Voltage IF = 30A IF = 15A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT20GF120B_SRDQ1(G) UNIT
15 29 110
TYP MAX UNIT Volts Amps
STATIC ELECTRICAL CHARACTERISTICS 2.8 2.4 2.45
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.80 0.60 0.40 0.20 0 0.7
21 240 260 3 290 960 6 130 1340 19 -
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.5
Note:
PDM
0.3 SINGLE PULSE
t1 t2
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp. (C) 0.676 Power (watts) 0.504 Case temperature. (C) 0.0440 0.00147
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6279
Rev A
10-2005
60 50 40 30 20 10 0 trr, REVERSE RECOVERY TIME (ns) TJ = 175C TJ = 125C TJ = 25C TJ = -55C
400 350 300 250 200 150 100 50 0
APT20GF120B_SRDQ1(G)
T = 125C J V = 800V
R
IF, FORWARD CURRENT (A)
30A
15A
7.5A
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 2500 Qrr, REVERSE RECOVERY CHARGE (nC) 30A
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 800V
R
0
30A
2000
20
1500 15A
15
1000 7.5A
10
15A
500
5
7.5A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5
Duty cycle = 0.5 T = 175C
J
0
trr trr IRRM
Qrr
Qrr
0.4 0.2 0.0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
052-6279
Rev A
10-2005
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10078BLL
APT20GF120B_SRDQ1(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D3 PAK Package Outline
e3 SAC: Tin, Silver, Copper
15.95 (.628) 16.05(.632)
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062)
1.04 (.041) 1.15(.045)
13.41 (.528) 13.51(.532)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
Emitter (Anode)
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4
052-6279
Dimensions in Millimeters and (Inches)
Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches)
Rev A
Gate Collector (Cathode)
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Collector) and Leads (Cathode) are Plated
10-2005
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

▲Up To Search▲

Price & Availability of APT20GF120SRDQ1G

	To Download APT20GF120SRDQ1G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .