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Bulletin I0103J 10/01 IR390DM..CCB SERIES STANDARD RECOVERY DIODES Junction Size: Wafer Size: VRRM Class: Passivation Process: Reference IR Packaged Part: Rectangular 390 X 270 mils 4" 800 to 1200 V Glassivated MOAT 85EPS Series Major Ratings and Characteristics Parameters VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1.15 V 800 to 1200 V Test Conditions TJ = 25C, I F = 85 A TJ = 25C, I RRM = 100 A (1) (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 390 x 270 mils (9.91x6.86 mm) - see drawing 100 mm, with std. < 110 > flat 300 m, 10 m 45 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR390DM..CCB Series Bulletin I0103J 10/01 Ordering Information Table Device Code IR 1 390 2 D 3 M 4 12 5 C 6 CB 7 1 2 3 4 5 6 7 - International Rectifier Device Chip Dimension in Mils Type of Device: D = Wire Bondable Standard Recovery Diode Passivation Process: M = Glassivated MOAT Voltage code: Code x 100 = VRRM Metallization: C = Aluminium (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) Available Class 08 = 800 V 10 = 1000V 12 = 1200 V None = Probed Die in chip carrier Outline Table All dimensions are in microns (mils) 2 www.irf.com IR390DM..CCB Series Bulletin I0103J 10/01 Wafer Layout TOP VIEW N 80 Basic Cells All dimensions are in millimeters www.irf.com 3 |
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