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| BUP 200 D IGBT With Antiparallel Diode Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 200 D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-220 AB Ordering Code Q67040-A4420-A2 1200V 3.6A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 3.6 2.4 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 7.2 4.8 TC = 25 C TC = 90 C Diode forward current IF 8 TC = 90 C Pulsed diode current, tp = 1 ms IFpuls 48 TC = 25 C Power dissipation Ptot 50 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-06-1995 BUP 200 D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 3.1 3.1 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 6.5 3.3 4.3 V VGE = VCE, IC = 0.1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 1.5 A, Tj = 25 C VGE = 15 V, IC = 1.5 A, Tj = 125 C Zero gate voltage collector current ICES 0.275 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 0.6 225 25 13 - S pF 320 40 24 VCE = 20 V, IC = 1.5 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Dec-06-1995 BUP 200 D Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 30 50 ns VCC = 600 V, VGE = 15 V, IC = 1.5 A RGon = 100 Rise time tr 20 30 nS VCC = 600 V, VGE = 15 V, IC = 1.5 A RGon = 100 Turn-off delay time td(off) 170 250 ns VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Fall time tf 15 25 mWs 0.25 - VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Total turn-off loss energy Eoff VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Free-Wheel Diode Diode forward voltage VF 2.3 1.9 3 - V IF = 4 A, VGE = 0 V, Tj = 25 C IF = 4 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr ns IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C Reverse recovery charge 60 100 C Qrr IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C Semiconductor Group - 1 1.8 3 Dec-06-1995 BUP 200 D Power dissipation Ptot = (TC) parameter: Tj 150 C 55 W Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 3.6 A Ptot 45 40 35 30 25 20 IC 2.8 2.4 2.0 1.6 1.2 15 0.8 10 5 0 0 20 40 60 80 100 120 C 160 0.4 0.0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 1 t = 4.5s p 10 s Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 IGBT A K/W IC 100 s ZthJC 10 0 10 0 1 ms D = 0.50 10 ms 0.20 10 -1 0.10 0.05 0.02 10 -1 DC single pulse 0.01 10 -2 0 10 10 1 10 2 10 3 V 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Dec-06-1995 BUP 200 D Typ. output characteristics Typ. transfer characteristics IC = f(VCE) parameter: tp = 80 s, Tj = 125 C IC = f (VGE) parameter: tP = 80 s, VCE = 20 V, Tj = 25 C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) parameter: Tj = 25 C VCE(sat) = f (VGE) parameter: Tj = 125 C Semiconductor Group 5 Dec-06-1995 BUP 200 D Typ. gate charge VGE = (QGate) parameter: IC puls = 1 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 14 400 V 12 10 8 6 4 2 0 0 4 8 12 16 20 24 800 V 32 Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc /IC(90C) I Cpuls/I C 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 0.0 0 200 400 600 800 1000 1200 V 1600 Semiconductor Group 6 Dec-06-1995 BUP 200 D Forward characteristics of fast recovery reverse diode IF = f (VF) parameter: Tj 4.5 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 Diode K/W IF 3.5 3.0 2.5 2.0 1.5 1.0 ZthJC 10 0 Tj=125C Tj=25C D = 0.50 0.20 10 -1 0.10 0.05 0.02 single pulse 0.01 0.5 0.0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 7 Dec-06-1995 BUP 200 D Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Dec-06-1995 |
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