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| 2SK3589-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOS FET MOSFET POWER FUJI Outline Drawings (mm) O}*@-OE S OUT VIEW Fig.1 oQAE* Z}* i- MARKING *\Z|"a--e Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters o}*Zi- Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID Tc=25C Ta=25C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25C Ta=25C Tch Tstg Ratings 100 70 50 6.9 ** 200 30 50 465 20 5 123 2.4 +150 Unit V V A A A V A mJ kV/s kV/s W W C C DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. j* ' P.*iQl* l'B jIZ*@ -a*" e** AE "a*\Z|--e *W Special specification for customer CONNECTION 11 G : : Gate G Gate OE*u} D "AZe*iL* Lot No. *bgNo. Type name 22 S1 : : Source1 S1 Source1 33 S2 : : Source2 S2 Source2 44 D : : Drain G D Drain S1 S2 OE-1/4 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source -55 to +150 ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=223H, Vcc=48V *2 Tch< 150C *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *5 VGS=-30V *4 VDS <100V = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=25A VGS=10V RGS=10 VCC=50V ID=50A VGS=10V L=100H Tch=25C IF=50A VGS=0V Tch=25C IF=50A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 19 25 1830 460 38 20 35 50 23 52 16 18 1.10 0.1 0.4 Min. 100 3.0 Typ. Max. 5.0 25 250 100 25 2745 690 57 30 53 75 35 78 24 27 1.65 Units V V A nA m S pF 19 ns nC 50 A V s C Thermalcharacteristics Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Item Symbol Min. Typ. Max. 0.93 87.0 52.0 Units C/W C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3589-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 200 175 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm ,t=1.6mm FR-4 PCB 2 2 4 150 125 3 (Drain pad area : 500mm ) PD [W] 100 75 50 25 0 0 25 50 75 100 125 150 PD [W] 2 1 0 0 25 50 75 100 125 150 Tc [C] Tc [C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A 500 200 Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 20V 10V 400 160 300 120 EAV [mJ] ID [A] 8V 80 7.5V 7.0V 200 100 40 6.5V 6.0V VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 starting Tch [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C ID[A] 10 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 gfs [S] VGS[V] 1 10 100 ID [A] 2 2SK3589-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.15 VGS= 5.5V 6.0V 6.5V 7.0V 7.5V 60 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=25A,VGS=10V 0.12 50 RDS(on) [ m ] RDS(on) [ ] 40 0.09 8V 30 max. 0.06 10V 20 typ. 0.03 20V 0.00 0 40 80 120 160 200 10 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch A VGS(th)=f(Tch):VDS=VGS,ID=250 14 12 max. 10 Typical Gate Charge Characteristics VGS=f(Qg):ID=50A, Tch=25C VGS(th) [V] 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Vcc= 50V 8 6 4 2 0 0 20 40 60 80 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C Ciss 0 10 10 C [nF] Coss 10 -1 IF [A] 1 2 Crss 10 -2 10 -1 10 0 10 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 3 2SK3589-01 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 10 3 FUJI POWER MOSFET Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 100 90 Rth(ch-a) [C/W] tf 2 80 70 60 50 40 30 20 10 10 td(off) tr t [ns] td(on) 10 1 10 0 0 -1 10 10 0 10 1 10 2 0 1000 2000 3000 2 4000 5000 ID [A] Drain Pad Area [mm ] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 Zth(ch-c) [C/W] 0 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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