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| VP2410L Vishay Siliconix P-Channel 240-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -240 rDS(on) Max (W) 10 @ VGS = -4.5 V VGS(th) (V) -0.8 to -2.5 ID (A) -0.18 FEATURES D D D D D High-Side Switching Secondary Breakdown Free: -255 V Low On-Resistance: 8 W Low-Power/Voltage Driven Excellent Thermal Stability BENEFITS D D D D D Ease in Driving Switches Full-Voltage Operation Low Offset Voltage Easily Driven Without Buffer No High-Temperature "Run-Away" APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Power Supply, Converters D Motor Control D Switches TO-226AA (TO-92) S 1 Device Marking Front View "S" VP 2410L xxyy "S" = Siliconix Logo xxyy = Date Code G 2 D 3 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70211 S-04279--Rev. D, 16-Jun-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limits -240 "20 -0.18 -0.11 -0.72 0.8 0.32 156 -55 to 150 Unit V A W _C/W _C 11-1 VP2410L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static VGS = 0 V, ID = -5 mA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10 mA VDS = VGS, ID = -1 mA Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -2.5 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS TJ = 125_C VDS = -180 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) TJ = 125_C VDS = -10 V, VGS = -4.5 V VGS = -10 V, ID = -0.1 A Drain-Source On-Resistanceb rDS(on) VGS = -4.5 V, ID = -0.1 A TJ = 125_C Forward Transconductanceb Common Source Output Conductanceb gfs gos VDS = -10 V, ID = -0.1 A VDS = -10 V, ID = -0.05 A 125 -150 -300 6 8 14.5 175 0.125 mS 10 20 W -0.8 -240 -255 -255 -2.1 -2.2 -2.5 "10 "50 -1 -100 mA m mA nA V Symbol Test Conditions Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =-25 V, VGS = 0 V f = 1 MHz 65 25 12 95 30 15 pF Switchingc Turn-On Time td(on) tr td(off) tf VDD = -25 V, RL = 250 W ID ^ -0.1 A, VGEN = -10 V RG = 25 W 7 18 45 45 15 30 ns 70 60 VPDV24 Turn-Off Time Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70211 S-04279--Rev. D, 16-Jun-01 VP2410L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics -500 -5 V -400 ID - Drain Current (mA) VGS = -10 V -4.5 V -300 -4 V -200 ID - Drain Current (mA) -80 VGS = -4 V -3.6 V -3.4 V -100 Output Characteristics for Low Gate Drive -60 -40 -3.0 V -20 -3.2 V -100 -3 V -2.8 V -2.6 V 0 0 -1 -2 -3 -4 -5 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics -500 VDS = -15 V TJ = -55_C rDS(on) - On-Resistance ( ) -400 ID - Drain Current (mA) 25_C 125_C -300 12 10 8 14 On-Resistance vs. Gate-to-Source Voltage ID = -0.20 A 6 ID = -0.1 A 4 2 -200 -100 0 0 -1 -2 -3 -4 -5 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 16 VGS = -4.5 V rDS(on) - Drain-Source On-Resistance ( ) 14 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 -100 -200 -300 -400 -500 -50 Normalized On-Resistance vs. Junction Temperature VGS = -10 V ID = -0.2 A 12 10 VGS = -4.5 V ID = -0.1 A 8 6 -10 20 70 110 150 ID - Drain Current (mA) TJ - Junction Temperature (_C) Document Number: 70211 S-04279--Rev. D, 16-Jun-01 www.vishay.com 11-3 VP2410L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region -10 150 Capacitance VGS = 0 V f = 1 MHz 125 TJ = 150_C ID - Drain Current (mA) C - Capacitance (pF) -1 125_C 25_C 100 Ciss 75 Coss -0.1 -55_C 50 Crss 25 -0.01 0 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 0 0 -10 -20 -30 -40 -50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge -12 ID = -100 mA -10 VGS - Gate-to-Source Voltage (V) 100 Load Condition Effects on Switching td(off) tf -8 VDS = -120 V -6 t - Switching Time (ns) tr 10 td(on) -4 -192 V -2 VDD = -25 V RG = 25 W VGS = 0 to -10 V 1 0 100 200 300 400 500 -10 -100 ID - Drain Current (mA) -1000 Qg - Total Gate Charge (pC) 1 Duty Cycle = 0.5 0.2 0.1 0.05 Notes: PDM 0 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Normalized Effective Transient Thermal Impedance 0.1 0.02 Single Pulse 0.01 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70211 S-04279--Rev. D, 16-Jun-01 |
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