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| (R) STGW50NB60H N-CHANNEL 50A - 600V TO-247 PowerMESHTM IGBT PRELIMINARY DATA TYPE STGW50NB60H s V CES 600 V V CE(sat) < 2.8 V IC 50 A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT 1 2 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V ECR V GE IC IC ICM (*) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 o C Collector Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 600 20 20 100 50 400 250 2 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (*) Pulse width limited by safe operating area June 1999 1/5 STGW50NB60H THERMAL DATA R thj-case R thj-amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-heatsink Max Max Typ 0.5 30 0.1 C/W oC/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) I CES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (V CE = 0) Test Conditions I C = 250 A V GE = 0 T j = 25 o C T j = 125 o C V CE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA V CE = Max Rating V CE = Max Rating V GE = 20 V ON () Symbol V GE(th) V CE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Conditions I C = 250 A I C = 50 A I C = 50 A Min. 3 2.3 1.9 Typ. Max. 5 2.8 Unit V V V T j = 125 o C DYNAMIC Symbol gf s C ies C oes C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current V CE =25 V V CE = 25 V Test Conditions I C = 50 A f = 1 MHz V GE = 0 Min. Typ. 22 4500 450 90 260 28 115 200 Max. Unit S pF pF pF nC nC nC A V CE = 480 V I C = 50 A V GE = 15 V V clamp = 480 V V GE = 15 V R G =10 T j = 150 o C SWITCHING ON Symbol t d(on) tr (di/dt) on E on Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 T j = 125 o C I C = 50 A R G = 10 I C = 50 A V GE = 15 V Min. Typ. 30 90 350 600 Max. Unit ns ns A/s J 2/5 STGW50NB60H ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol tc t r (v off ) td (of f ) tf E off (**) Ets tc t r (v off ) td (of f ) tf E off (**) Ets Parameter Test Conditions I C = 50 A V GE = 15 V Min. Typ. 166 48 326 90 2.1 2.7 270 75 340 200 2.9 3.5 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 10 Delay Time Fall Time Turn-off Switching Loss Total Switching Loss VCC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 10 Delay Time T j = 125 o C Fall Time Turn-off Switching Loss Total Switching Loss I C = 50 A V GE = 15 V (*) Pulse width limited by max. junction temperature () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) 3/5 STGW50NB60H TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 4/5 STGW50NB60H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 5/5 |
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