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| AP1801GU Pb Free Plating Product Advanced Power Electronics Corp. Capable of 2.5V gate drive Lower on-resistance Surface mount package D 2021-8 S S S D D G D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 70m -4A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D G The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6. S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 12 -4 -3.3 20 1.6 0.013 -55 to 150 -55 to 150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 78 Unit /W Data and specifications subject to change without notice 200111051 AP1801GU Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 - Typ. 0.01 10 11 2 4 10 16 26 16 740 160 130 6.6 Max. 52 70 100 -1.2 -1 -10 100 18 1180 10 Unit V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4.8A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VDS=-20V, VGS=0V VDS=-16V ,VGS=0V VGS=12V ID=-4A VDS=-16V VGS=-4.5V VDS=-10V ID=-1A RG=3.3,VGS=-5V RD=10 VGS=0V VDS=-20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.3A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/s Min. - Typ. 29 20 Max. -1.2 - Unit V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 125 /W at steady state. AP1801GU 20 20 T A =25 C -ID , Drain Current (A) 15 o - 5.0V - 4.5V - 3.5V -ID , Drain Current (A) T A = 150 o C 15 -5.0V -4.5V -3.5V - 2.5V 10 10 -2.5V 5 5 V G = -1.5 V 0 0 1 2 3 4 0 V G = -1.5 V 0 1 2 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.4 I D = -2 A Normalized R DS(ON) 70 T A =25 C o 1.2 I D = -4 A V G = - 4.5V RDS(ON) (m ) 60 1.0 50 0.8 40 0.6 0 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 4.0 3.0 Normalized -VGS(th) (V) 1.2 1.2 -IS(A) 2.0 T j =150 o C T j =25 o C 0.8 1.0 0.0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1801GU f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) I D =-4A V DS =-16V 8 C iss 4 C (pF) C oss C rss 0 0 5 10 15 20 25 100 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (R thja) 0.2 10 100us 1ms -ID (A) 1 0.1 0.1 0.05 0.02 0.01 PDM t T 10ms 100ms 0.1 0.01 Single Pulse o T A =25 C Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125/W 1s DC 10 100 0.01 0.1 1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =-5V -ID , Drain Current (A) T j =25 o C 20 VG T j =150 o C QG -4.5V QGS QGD 10 Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform |
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