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| MWS11-PHxx-CS W-CMDA Power Amplifier A MICROSEMI COMPANY PRELIMINARY The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread spectrum systems, and other linear applications in the 1800MHz to 2000MHz band. There are two 16-pin package versions for this Power Amplifier. One is a 3mm x 3mm chip scale package (CSP) with external input/output match and the other is an internally I/O matched module. Single 3V Supply 27dBm Linear Output Power 28dB Linear Gain 40% Linear Efficiency 70mA Idle Current W W W .Microsemi .COM 3V 1920-1980 W-CDMA Handsets 3V 1850-1910 CMDA2000 Handsets Spread Spectrum Systems Other Linear Wireless IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com Applications 16-Pin Leadless Package TOP BOTTOM 3mm 3mm PACKAGE DATA PACKAGE DATA Actual Size TJ (C) W-CDMA CDMA-2000 L Plastic MLP 16-PIN MWS11-PH41-CS MWS11-PH43-CS Copyright (c) 2000 Rev. 0.2b,2000-11-07 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 MWS11-PHxx-CS W-CMDA Power Amplifier A MICROSEMI COMPANY PRELIMINARY Supply Voltage (VBAT) ............................................................................................. 8.0V DC Supply Voltage (POUT<31 dBm)............................................................................... 5.0V DC Mode Voltage (VMODE)............................................................................................. 3.0V DC Control Voltage (VPD) .............................................................................................. 3.0V DC Input RF Power .......................................................................................................... 6dBm Operating Case Temperature....................................................................... -30C to 100C Storage Temperature .................................................................................... 30C to 150C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. W W W .Microsemi .COM RF IN VCC1 VCC2 VCC VB1 VB2 RF input. An external series capacitor is required as a DC block. The input match can be improved to < 2:1 by using a series capacitor and shunt inductor. Power supply for first stage and interstage match. VCC should be fed through an inductor terminated with a capacitor on the supply side. Power supply for Second stage and interstage match. VCC should be fed through an inductor terminated with a capacitor on the supply side. Supply for bias reference circuits. First stage control voltage. The VB1 pin can be connected with the other stage control voltages into a single reference voltage through an external resistor bridge. Second stage control voltage. The VB2 pin can be connected with the other stage control voltages into a single reference voltage through an external resistor bridge. RF Output and Power supply for final stage. This is the unmatched collector output of the third stage. A DC Block is required following the matching components. The biasing may be provided via a parallel L-C set for resonance at the operating frequency of 1920MHz to 1980 MHz. It is important to select an inductor with very low DC resistance with a 1A current rating. Alternatively, shunt microstrip techniques are also applicable and provide very low DC resistance. Low frequency bypassing is required for stability. There are three pins designated as RF OUT. This is a circuit level ground, isolated from the backside ground contact. Ground for First Stage. This ground should be isolated from the backside ground contact. Ground for Second Stage. This ground should be isolated from the backside ground contact. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. RF OUT GND GND1 GND2 PKGGND PACKAGE DATA PACKAGE DATA Copyright (c) 2000 Rev. 0.2b,2000-11-07 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 MWS11-PHxx-CS W-CMDA Power Amplifier A MICROSEMI COMPANY PRELIMINARY Unless otherwise specified, the following specifications apply over the operating ambient temperature -35C TA 85C except where otherwise noted. Test conditions: [Enter Test Conditions Here] Parameter Frequency Range Nominal Linear Output Power (WCDMA Modulation) Linear Gain Second Harmonic Third Harmonic Fourth Harmonic Total Linear Efficiency Adjacent Channel Power Rejection @5 MHz @10 MHz Reverse Inter modulation @ Symbol Test Conditions T = 25C, VCC = 3.4V at 27dBm output power RMS power as defined by 3GPP T = 25C, VCC = 3.4V at 27dBm output power RMS power as defined by 3GPP T = 25C, VCC = 3.4V at 27dBm output power RMS power as defined by 3GPP T = 25C, VCC = 3.4V at 27dBm output power RMS power as defined by 3GPP T = 25C, VCC = 3.4V at 27dBm output power RMS power as defined by 3GPP T = 25C, VCC = 3.4V at 27dBm output power RMS power as defined by 3GPP T = 25C, VCC = 3.4V at 27dBm output power RMS power as defined by 3GPP -50 dBm to 27 dBm output. Power VCC 3.0 to 5.0V, T = -10 to +75C, load VSWR = 1:1 to 5:1, all phases Levels at the Output: interferer -25 dBm @ 1790 MHz, useful signal 27 dBm @ 1980 MHz MWS11-PHxx-CS Min Typ Max 1920 27 25 29 27 -35 -40 -45 35 -45 -60 40 -40 -50 -33 -43 -35 -50 70 EVM and Peak Code Domain Error Refer to 3GPP spec. 3G TS 25.101 Eq. To -132 dBm / Hz VCC = 3.0V, -10C < Temp < +75C WCDMA Modulation 17.5 -79 -71 -66 25 < 2:1 5:1 10 3.4 27 1980 30 28 Units MHz dBm dB dB dB dB % dBc dBc dBm dBm mA % dBm dBm dBm W W W .Microsemi .COM 2 x FTX - FINT = 2110 MHz Output Power Dynamic Quiescent Current @ Low Power Modulation Accuracy (EVM) Noise Power in Band 925-960 MHz @ 100 KHz BW 1805-1880 MHz @ 100 KHz BW 2110-2170 MHz @ 3.84 MHz BW Nominal Linear Output Power Input VSWR Output VSWR Leakage Current (Down Power) Power supply Voltage 3.04 5.0 A V SPECIFICATIONS SPECIFICATIONS Copyright (c) 2000 Rev. 0.2b,2000-11-07 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 MWS11-PHxx-CS W-CMDA Power Amplifier A MICROSEMI COMPANY PRELIMINARY W W W .Microsemi .COM Figure 1 - Evaluation Board for the W-CDMA Power Amp VREF 2.8V C15 10-50mF T1 W =10mil L=40mil R2 640 ohm C16 100 pF C8 100pF C17 100pF C9 100pF C12 0.1F C13 10-50mF VCC 3.5V C10 100pF R1 295 ohm VB2 VC C2 VB1 VC C T2 W =20mil L=825mil W =48mil L=50mil RF O UT W =48mil L=163mil C6 2.2pF C7 2.2pF 50 ohm line RF IN 50 ohm line C16 1.8pF W =48mil L=150mil W =48mil W 1=10mil L=5mil W 2=48mil C3 L=20mil 2.7pF M W S11PH 41-C S APPLICATION APPLICATION Figure 2 - Evaluation Board for the W-CDMA Schematic Copyright (c) 2000 Rev. 0.2b,2000-11-07 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 |
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