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| polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.0 Watts Push - Pull Package Style LR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 230 Watts Junction to Case Thermal Resistance o 0.75 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 13.5 A RF CHARACTERISTICS ( 130.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 14 55 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 0.40 A, Vds = 28.0 V, F = Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz 500 MHz VSWR Relative Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2.7 0.28 17.00 80.0 4.0 50.0 MIN 65 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.25 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 04/27/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com LR401 POUT VS PIN GRAPH LR401 Pin vs Pout Freq=500Mhz; Vds=28Vdc, Idq=.8A 180 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Pin in Watts 7 8 9 10 Efficiency @130W = 60% 18 1000 CAPACITANCE VS VOLTAGE L4 1DIE CAPACITANCE P1dB = 100W Pout 17 16 15 100 Ciss Coss Gain 14 13 12 10 Crss 1 0 5 10 15 20 25 30 VDS IN VOLTS IV CURVE L4 1 DIE IV 18 16 14 12 ID IN AMPS 10 8 6 4 2 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 0 2 4 1 10 100 ID & GM VS VGS L4 1 DIE ID, GM vs VG ID G vg=2v Vg=4v vg=10v vg=12v Vgs in Volts 6 8 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 04/27/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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