Part Number Hot Search : 
HMS20 SMBJ10 C1006 A5801038 00N04 09FXM0 PIC7505 TMP86
Product Description
Full Text Search
 

To Download IPI08CN10NG Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 IPB08CN10N G IPI08CN10N G IPP08CN10N G
OptiMOS(R)2 Power-Transistor
Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO263) ID 100 8.2 95 V m A
* Ideal for high-frequency switching and synchronous rectification Type IPB08CN10N G IPI08CN10N G IPP08CN10N G
Package Marking
PG-TO263-3 08CN10N
PG-TO262-3 08CN10N
PG-TO220-3 08CN10N
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C T C=25 C I D=95 A, R GS=25 I D=95 A, V DS=80 V, di /dt =100 A/s, T j,max=175 C Value 95 68 380 262 6 20 167 -55 ... 175 55/175/56 mJ kV/s V W C Unit A
Rev. 1.02
page 1
2006-06-02
IPB08CN10N G IPI08CN10N G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction 4) ambient (TO220, TO262, TO263) R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.9 62 40 K/W
IPP08CN10N G
Unit max.
Values typ.
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=130 A V DS=100 V, V GS=0 V, T j=25 C V DS=100 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=95 A, (TO263) V GS=10 V, I D=95 A, (TO220, TO262) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=95 A 100 2 3 0.1 4 1 A V
-
10 1 6.1
100 100 8.2 nA m
57
6.4 1.5 113
8.5 S
1)
J-STD20 and JESD22 See figure 3 Tjmax=150 C and duty cycle D=0.01 for V gs<-5V
2) 3) 4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.02
page 2
2006-06-02
IPB08CN10N G IPI08CN10N G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
5)
IPP08CN10N G
Unit max.
Values typ.
C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=47.5 A, R G=1.6 V GS=0 V, V DS=50 V, f =1 MHz
-
5010 757 43 15 24 26 6
6660 1010 65 23 36 39 10
pF
ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=95 A, V GS=0 to 10 V
-
27 18 30 75 5.5 80
36 27 44 100 106
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 C V GS=0 V, I F=95 A, T j=25 C V R=50 V, I F=I S, di F/dt =100 A/s
-
1 105 270
95 380 1.2
A
V ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.02
page 3
2006-06-02
IPB08CN10N G IPI08CN10N G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V
IPP08CN10N G
200
100
160
80
120
60
P tot [W]
80
I D [A]
40 40 20 0 0 50 100 150 200 0 0 50 100 150 200
T C [C]
T C [C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
103
1 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
0.5 10 s
102
100 s 1 ms DC 10 ms 0.2
Z thJC [K/W]
I D [A]
10
1
10-1
0.1
0.05 0.02
100
0.01 single pulse
10-1 10
-1
10-2 10
0
10
1
10
2
10
3
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.02
page 4
2006-06-02
IPB08CN10N G IPI08CN10N G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
350
10 V 8V 7V
IPP08CN10N G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
20
4.5 V 5V 5.5 V
300
250
15
6.5 V
200
R DS(on) [m]
I D [A]
10
6V
150
6V
10 V
100
5.5 V
5
50
5V 4.5 V
0 0 1 2 3 4 5
0 0 50 100 150
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
200
8 Typ. forward transconductance g fs=f(I D); T j=25 C
160 140
150
120 100
100
g fs [S]
25 C
I D [A]
175 C
80 60 40 20
50
0 0 2 4 6 8
0 0 40 80 120 160
V GS [V]
I D [A]
Rev. 1.02
page 5
2006-06-02
IPB08CN10N G IPI08CN10N G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=95 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
20 4 3.5 15 3 2.5 10
98 % 130 A 1300 A
IPP08CN10N G
R DS(on) [m]
V GS(th) [V]
typ
2 1.5 1 0.5
5
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
104
Ciss
103
Coss 175 C 25 C 175 C, 98%
103
102
C [pF]
I F [A]
25 C, 98%
Crss
102
101
101 0 20 40 60 80
100 0 0.5 1 1.5 2
V DS [V]
V SD [V]
Rev. 1.02
page 6
2006-06-02
IPB08CN10N G IPI08CN10N G
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
IPP08CN10N G
14 Typ. gate charge V GS=f(Q gate); I D=95 A pulsed parameter: V DD
12
25 C 100 C
10
50 V 20 V
150 C
8
80 V
10
V GS [V]
1 10 100 1000
I AS [A]
6
4
2
1
0 0 20 40 60 80
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
115
V GS
Qg
110
V BR(DSS) [V]
105
100
V g s(th)
95
Q g (th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q gate
90
T j [C]
Rev. 1.02
page 7
2006-06-02
IPB08CN10N G IPI08CN10N G
PG-TO220-3: Outline
IPP08CN10N G
Rev. 1.02
page 8
2006-06-02
IPB08CN10N G IPI08CN10N G IPP08CN10N G
Rev. 1.02
page 9
2006-06-02
IPB08CN10N G IPI08CN10N G
PG-TO-263 (D-Pak)
IPP08CN10N G
Rev. 1.02
page 10
2006-06-02
IPB08CN10N G IPI08CN10N G IPP08CN10N G
Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.02
page 11
2006-06-02


▲Up To Search▲   

 
Price & Availability of IPI08CN10NG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X