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PD - 97065A IRF7905PBF HEXFET(R) Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free VDSS 30V RDS(on) max Q1 21.8m:@VGS = 10V Q2 17.1m:@VGS = 10V ID 7.8A 8.9A 6 * 6 * ' ' ' ' SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 7.8 6.2 62 2.0 1.3 0.016 -55 to + 150 Q1 Max. 30 20 Q2 Max. Units V 8.9 7.1 71 2.0 1.3 0.016 W/C C W A c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RJL RJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 20 62.5 Q2 Max. 20 62.5 Units C/W www.irf.com 1 07/10/06 IRF7905PBF BVDSS VDSS/TJ Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 Min. 30 --- --- --- --- --- --- 1.35 --- --- --- --- --- --- 15 18 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.024 0.024 17.4 23.4 13.7 17.1 1.8 -5.0 -5.0 --- --- --- --- --- --- 4.6 6.9 0.9 1.5 0.6 0.8 1.7 2.5 1.4 2.1 2.3 3.3 2.9 4.5 3.1 3.1 5.2 6.2 8.3 9.3 6.9 8.1 3.4 3.4 600 910 130 190 78 95 Max. --- --- --- 21.8 29.3 17.1 21.3 2.25 --- --- 1.0 150 100 -100 --- --- 6.9 10 --- --- --- --- --- --- --- --- --- --- --- --- 4.9 4.9 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- Min. --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- --- --- 10 13 2.5 4.0 Max. 2.8 2.8 62 71 1.0 1.0 15 20 3.8 6.0 Conditions Units VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 7.8A VGS = 4.5V, ID = 6.2A VGS = 10V, ID = 8.9A VGS = 4.5V, ID = 7.1A VDS = VGS, ID = 25A RDS(on) Static Drain-to-Source On-Resistance m e e e e VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Q sw Q oss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Q1&Q2 Q1 Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 V mV/C A nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 6.2A VDS = 15V, ID = 7.1A nC Q1 VDS = 15V VGS = 4.5V, ID = 6.2A Q2 VDS = 15V VGS = 4.5V, ID = 7.1A nC VDS = 16V, VGS = 0V Q1 VDD = 15V, VGS = 4.5V ID = 6.2A ns Q2 VDD = 15V, VGS = 4.5V ID = 7.1A Clamped Inductive Load VGS = 0V VDS = 15V = 1.0MHz pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Q1 Max. 12 6.2 Q2 Max. 18 7.1 Units mJ A Diode Characteristics IS ISM VSD trr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Units Conditions A MOSFET symbol showing the A integral reverse p-n junction diode. TJ = 25C, IS = 6.1A, VGS = 0V V TJ = 25C, IS = 7.1A, VGS = 0V Q1 TJ = 25C, IF = 6.2A, ns VDD = 15V, di/dt = 100A/s nC Q2 TJ = 25C, IF = 7.1A, VDD = 15V, di/dt = 100A/s e e e e 2 www.irf.com Typical Characteristics Q1 - Control FET 100 TOP IRF7905PBF Q2 - Synchronous FET 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 BOTTOM 1 1 0.1 0.1 2.3V 60s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 2.3V 0.01 0.1 1 60s PULSE WIDTH Tj = 25C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V Fig 2. Typical Output Characteristics 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM 2.3V 1 1 2.3V 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 100.0 100.0 Fig 4. Typical Output Characteristics ID, Drain-to-Source Current() 10.0 ID, Drain-to-Source Current() 10.0 TJ = 150C TJ = 150C 1.0 TJ = 25C VDS = 15V 60s PULSE WIDTH 1.0 TJ = 25C VDS = 15V 60s PULSE WIDTH 0.1 1.0 2.0 3.0 4.0 5.0 6.0 0.1 1.0 2.0 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Transfer Characteristics www.irf.com 3 IRF7905PBF Q1 - Control FET 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Typical Characteristics Q2 - Synchronous FET 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance (pF) 1000 C, Capacitance (pF) Coss = Cds + Cgd Ciss Ciss Coss 100 Coss 100 Crss Crss 10 1 10 100 10 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 12 VGS, Gate-to-Source Voltage (V) 12 ID= 6.3A 10 8 6 4 2 0 0 2 VGS, Gate-to-Source Voltage (V) VDS= 25V VDS= 16V VDS= 7.6V ID= 7.1A 10 8 6 4 2 0 VDS= 25V VDS= 16V VDS= 7.6V 4 6 8 10 0 4 8 12 16 QG Total Gate Charge (nC) QG, Total Gate Charge (nC) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage 1000 Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 1msec ID, Drain-to-Source Current (A) 100 1msec 10 100sec ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100sec 1 10msec 1 10msec 0.1 TA = 25C Tj = 150C Single Pulse 0.1 1 100msec 0.1 TA = 25C Tj = 150C Single Pulse 0.1 1 100msec 0.01 0.01 10 100 0.01 0.01 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www.irf.com Typical Characteristics Q1 - Control FET 2.0 2.0 IRF7905PBF Q2 - Synchronous FET ID = 8.9A VGS = 10V RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 7.8A VGS = 10V 1.5 RDS(on), Drain-to-Source On Resistance (Normalized) 20 40 60 80 100 120 140 160 1.5 1.0 1.0 0.5 -60 -40 -20 0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) TJ , Junction Temperature (C) Fig 13. Normalized On-Resistance vs. Temperature 100.0 Fig 14. Normalized On-Resistance vs. Temperature 100 ISD, Reverse Drain Current (A) ISD , Reverse Drain Current (A) 10.0 TJ = 150C 10 TJ = 150C 1.0 1 TJ = 25C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 25C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage ( RDS (on), Drain-to -Source On Resistance m) 50 Fig 16. Typical Source-Drain Diode Forward Voltage ( RDS (on), Drain-to -Source On Resistance m) 50 ID = 7.8A 40 ID = 8.9A 40 30 TJ = 125C 30 20 TJ = 25C TJ = 125C 20 10 2 4 6 8 10 10 2 4 6 TJ = 25C 8 10 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance vs.Gate Voltage Fig 18. Typical On-Resistance vs.Gate Voltage www.irf.com 5 IRF7905PBF Q1 - Control FET 8 Typical Characteristics Q2 - Synchronous FET 10 8 ID, Drain Current (A) ID, Drain Current (A) 25 50 75 100 125 150 6 6 4 4 2 2 0 0 25 50 75 100 125 150 TJ, Ambient Temperature (C) TJ, Ambient Temperature (C) Fig 19. Maximum Drain Current vs. Ambient Temp. 2.2 Fig 20. Maximum Drain Current vs. Ambient Temp. 2.4 VGS(th), Gate threshold Voltage (V) VGS(th, Gate threshold Voltage (V) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 2.0 1.8 ID = 250A ID = 250A 1.6 1.4 1.2 -75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) TJ , Temperature ( C ) Fig 21. Threshold Voltage vs. Temperature EAS, Single Pulse Avalanche Energy (mJ) EAS, Single Pulse Avalanche Energy (mJ) 50 Fig 22. Threshold Voltage vs. Temperature 80 40 ID TOP 3.0A 3.5A BOTTOM 6.2A 60 ID 3.2A 3.7A BOTTOM 7.1A TOP 30 40 20 20 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Starting TJ, Junction Temperature (C) Fig 23. Maximum Avalanche Energy vs. Drain Current Fig 24. Maximum Avalanche Energy vs. Drain Current 6 www.irf.com IRF7905PBF 100 D = 0.50 Thermal Response ( ZthJA ) 10 0.20 0.10 0.05 R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 a 1 2 3 4 4 1 0.02 0.01 J 0.1 Ci= i/Ri Ci= i/Ri Ri (C/W) (sec) 2.195355 0.000149 8.470326 0.019287 36.46787 0.63002 15.37789 15.12 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Ta 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1) 100 D = 0.50 Thermal Response ( ZthJA ) 10 0.20 0.10 0.05 R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 a 1 2 3 4 4 1 0.02 0.01 J 0.1 Ci= i/Ri Ci= i/Ri Ri (C/W) (sec) 2.073115 0.000216 9.069028 0.028592 36.96639 0.75582 14.40736 21 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Ta 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2) L S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 Co Vo GND Cin Vin Fig 27. Layout Diagram www.irf.com 7 IRF7905PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01 I AS Fig 29a. Unclamped Inductive Test Circuit Fig 29b. Unclamped Inductive Waveforms 15V VDS 90% DRIVER VDS L 10% RG 20V D.U.T IAS tp + V - DD A VGS td(on) tr td(off) tf 0.01 Fig 30a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. Fig 30b. Switching Time Waveforms Id Vds Vgs 50K 12V .2F .3F VGS -3mA IG ID Current Sampling Resistors Fig 31a. Gate Charge Test Circuit 8 + D.U.T. - VDS Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 31b. Gate Charge Waveform www.irf.com IRF7905PBF SO-8 Package Details 9 6 ' & ! % " $ 7 9DH 6 6 i p 9 @ r r C F G DI8C@T HDI H6Y $"! %'' # (' ! " &$ (' (%' '( #(& $ $AA76TD8 !$AA76TD8 !!'# !## (( (% $ % A' A HDGGDH@U@ST HDI H6Y &$ "$ !$ $ "" ( !$ $ #' # "' !&AA76TD8 %"$AA76TD8 %! $' $ !$ !& # A A' % @ $ # C !$Ab dA 6 %Y r r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ APPUQSDIU 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S www.irf.com 9 IRF7905PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, Q1: L = 0.62mH RG = 25, IAS = 6.2A; Q2: L = 0.72mH RG = 25, IAS = 7.1A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ approximately 90C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2006 10 www.irf.com |
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