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 PD - 97065A
IRF7905PBF
HEXFET(R) Power MOSFET
Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free
VDSS
30V
RDS(on) max
Q1 21.8m:@VGS = 10V Q2 17.1m:@VGS = 10V
ID
7.8A 8.9A
6 * 6 *
' ' ' '
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 7.8 6.2 62 2.0 1.3 0.016 -55 to + 150
Q1 Max.
30 20
Q2 Max.
Units
V
8.9 7.1 71 2.0 1.3 0.016 W/C C W A
c
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RJL RJA Parameter Junction-to-Drain Lead
g Junction-to-Ambient fg
Q1 Max.
20 62.5
Q2 Max.
20 62.5
Units C/W
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1
07/10/06
IRF7905PBF
BVDSS VDSS/TJ
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 Min. 30 --- --- --- --- --- --- 1.35 --- --- --- --- --- --- 15 18 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.024 0.024 17.4 23.4 13.7 17.1 1.8 -5.0 -5.0 --- --- --- --- --- --- 4.6 6.9 0.9 1.5 0.6 0.8 1.7 2.5 1.4 2.1 2.3 3.3 2.9 4.5 3.1 3.1 5.2 6.2 8.3 9.3 6.9 8.1 3.4 3.4 600 910 130 190 78 95 Max. --- --- --- 21.8 29.3 17.1 21.3 2.25 --- --- 1.0 150 100 -100 --- --- 6.9 10 --- --- --- --- --- --- --- --- --- --- --- --- 4.9 4.9 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- Min. --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- --- --- 10 13 2.5 4.0 Max. 2.8 2.8 62 71 1.0 1.0 15 20 3.8 6.0 Conditions Units VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 7.8A VGS = 4.5V, ID = 6.2A VGS = 10V, ID = 8.9A VGS = 4.5V, ID = 7.1A VDS = VGS, ID = 25A
RDS(on)
Static Drain-to-Source On-Resistance
m
e e e e
VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Q sw Q oss RG td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge
Gate Resistance
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Q1&Q2 Q1 Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
V mV/C A nA S
VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 6.2A VDS = 15V, ID = 7.1A
nC
Q1 VDS = 15V VGS = 4.5V, ID = 6.2A Q2 VDS = 15V VGS = 4.5V, ID = 7.1A
nC
VDS = 16V, VGS = 0V
Q1 VDD = 15V, VGS = 4.5V ID = 6.2A ns Q2 VDD = 15V, VGS = 4.5V ID = 7.1A Clamped Inductive Load VGS = 0V VDS = 15V = 1.0MHz
pF
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current
d
Q1 Max. 12 6.2
Q2 Max. 18 7.1
Units mJ A
Diode Characteristics
IS ISM VSD trr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Units Conditions A MOSFET symbol showing the A integral reverse p-n junction diode. TJ = 25C, IS = 6.1A, VGS = 0V V TJ = 25C, IS = 7.1A, VGS = 0V Q1 TJ = 25C, IF = 6.2A, ns VDD = 15V, di/dt = 100A/s nC Q2 TJ = 25C, IF = 7.1A, VDD = 15V, di/dt = 100A/s
e e e e
2
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Typical Characteristics Q1 - Control FET
100
TOP
IRF7905PBF
Q2 - Synchronous FET
100
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
10
BOTTOM
1
1
0.1
0.1
2.3V 60s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
2.3V
0.01 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
Fig 2. Typical Output Characteristics
100
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
2.3V
1
1
2.3V 60s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
60s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
100.0 100.0
Fig 4. Typical Output Characteristics
ID, Drain-to-Source Current()
10.0
ID, Drain-to-Source Current()
10.0
TJ = 150C
TJ = 150C
1.0
TJ = 25C VDS = 15V 60s PULSE WIDTH
1.0
TJ = 25C VDS = 15V 60s PULSE WIDTH
0.1 1.0 2.0 3.0 4.0 5.0 6.0
0.1 1.0 2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Transfer Characteristics
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IRF7905PBF
Q1 - Control FET
10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
Typical Characteristics Q2 - Synchronous FET
10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1000
C, Capacitance (pF)
1000
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
Ciss
Coss
100
Coss
100
Crss
Crss
10 1 10 100
10 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
12
VGS, Gate-to-Source Voltage (V)
12
ID= 6.3A 10 8 6 4 2 0 0 2
VGS, Gate-to-Source Voltage (V)
VDS= 25V VDS= 16V VDS= 7.6V
ID= 7.1A 10 8 6 4 2 0 VDS= 25V VDS= 16V VDS= 7.6V
4
6
8
10
0
4
8
12
16
QG Total Gate Charge (nC)
QG, Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 1msec
ID, Drain-to-Source Current (A)
100 1msec
10
100sec
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10
100sec
1
10msec
1
10msec
0.1
TA = 25C Tj = 150C Single Pulse 0.1 1
100msec
0.1
TA = 25C Tj = 150C Single Pulse 0.1 1
100msec
0.01 0.01
10
100
0.01 0.01
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
Fig 12. Maximum Safe Operating Area
4
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Typical Characteristics Q1 - Control FET
2.0
2.0
IRF7905PBF
Q2 - Synchronous FET
ID = 8.9A VGS = 10V
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 7.8A VGS = 10V
1.5
RDS(on), Drain-to-Source On Resistance (Normalized)
20 40 60 80 100 120 140 160
1.5
1.0
1.0
0.5 -60 -40 -20 0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
TJ , Junction Temperature (C)
Fig 13. Normalized On-Resistance vs. Temperature
100.0
Fig 14. Normalized On-Resistance vs. Temperature
100
ISD, Reverse Drain Current (A)
ISD , Reverse Drain Current (A)
10.0
TJ = 150C
10
TJ = 150C
1.0
1
TJ = 25C VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4
TJ = 25C VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
( RDS (on), Drain-to -Source On Resistance m)
50
Fig 16. Typical Source-Drain Diode Forward Voltage
( RDS (on), Drain-to -Source On Resistance m)
50
ID = 7.8A
40
ID = 8.9A
40
30
TJ = 125C
30
20
TJ = 25C
TJ = 125C
20
10 2 4 6 8 10
10 2 4 6
TJ = 25C
8 10
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
Fig 18. Typical On-Resistance vs.Gate Voltage
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5
IRF7905PBF
Q1 - Control FET
8
Typical Characteristics Q2 - Synchronous FET
10
8
ID, Drain Current (A)
ID, Drain Current (A)
25 50 75 100 125 150
6
6
4
4
2
2
0
0 25 50 75 100 125 150
TJ, Ambient Temperature (C)
TJ, Ambient Temperature (C)
Fig 19. Maximum Drain Current vs. Ambient Temp.
2.2
Fig 20. Maximum Drain Current vs. Ambient Temp.
2.4
VGS(th), Gate threshold Voltage (V)
VGS(th, Gate threshold Voltage (V)
2.2 2.0 1.8 1.6 1.4 1.2 1.0
2.0
1.8
ID = 250A
ID = 250A
1.6
1.4
1.2 -75 -50 -25 0 25 50 75 100 125 150
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( C )
TJ , Temperature ( C )
Fig 21. Threshold Voltage vs. Temperature
EAS, Single Pulse Avalanche Energy (mJ) EAS, Single Pulse Avalanche Energy (mJ)
50
Fig 22. Threshold Voltage vs. Temperature
80
40
ID TOP 3.0A 3.5A BOTTOM 6.2A
60
ID 3.2A 3.7A BOTTOM 7.1A
TOP
30
40
20
20
10
0 25 50 75 100 125 150
0 25 50 75 100 125 150
Starting TJ, Junction Temperature (C)
Starting TJ, Junction Temperature (C)
Fig 23. Maximum Avalanche Energy vs. Drain Current
Fig 24. Maximum Avalanche Energy vs. Drain Current
6
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IRF7905PBF
100
D = 0.50
Thermal Response ( ZthJA )
10
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 a 1 2 3 4 4
1
0.02 0.01
J
0.1
Ci= i/Ri Ci= i/Ri
Ri (C/W) (sec) 2.195355 0.000149 8.470326 0.019287 36.46787 0.63002 15.37789 15.12
SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Ta
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
100
D = 0.50
Thermal Response ( ZthJA )
10
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 a 1 2 3 4 4
1
0.02 0.01
J
0.1
Ci= i/Ri Ci= i/Ri
Ri (C/W) (sec) 2.073115 0.000216 9.069028 0.028592 36.96639 0.75582 14.40736 21
SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Ta
1 10 100
t1, Rectangular Pulse Duration (sec)
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
L
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
Co Vo GND
Cin Vin
Fig 27. Layout Diagram
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IRF7905PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 29a. Unclamped Inductive Test Circuit
Fig 29b. Unclamped Inductive Waveforms
15V
VDS
90%
DRIVER
VDS
L
10%
RG
20V
D.U.T
IAS tp
+ V - DD
A
VGS
td(on) tr td(off) tf
0.01
Fig 30a. Switching Time Test Circuit
Current Regulator Same Type as D.U.T.
Fig 30b. Switching Time Waveforms
Id Vds Vgs
50K 12V .2F .3F
VGS
-3mA
IG
ID
Current Sampling Resistors
Fig 31a. Gate Charge Test Circuit
8
+
D.U.T.
-
VDS
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 31b. Gate Charge Waveform
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IRF7905PBF
SO-8 Package Details
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96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
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IRF7905PBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, Q1: L = 0.62mH RG = 25, IAS = 6.2A; Q2: L = 0.72mH RG = 25, IAS = 7.1A. Pulse width 400s; duty cycle 2%.
When mounted on 1 inch square copper board. R is measured at TJ approximately 90C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2006
10
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