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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD45HMF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
Silicon MOSFET Power Transistor 900MHz,45W DESCRIPTION
RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. OUTLINE DRAWING
4-C2
24.0+/-0.6
*High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz *High Efficiency: 50%typ.
2
10.0+/-0.3
FEATURES
9.6+/-0.3
0.1 -0.01
3
+0.05
R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in 800-900MHz Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm
ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 30 +/-20 125 25 15 175 -40 to +175 1.2 UNIT V V W
W A C C C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=900MHz ,VDD=12.5V Pin=15W,Idq=2.0A VDD=15.2V,Po=45W(PinControl) Idq=2.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.0 45 45 LIMITS TYP MAX. 10 1 3.0 50 50 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD45HMF1
3.3+/-0.2
MITSUBISHI ELECTRIC
1/7
REV.2 7 Apr. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD45HMF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
Silicon MOSFET Power Transistor 900MHz,45W TYPICAL CHARACTERISTICS
160 CHANNEL DISSIPATION Pch(W) DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
120 Ids(A) 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
80 40
0
0
1
2 Vgs(V)
3
4
Vds-Ids CHARACTERISTICS 10
Ta=+25C Vgs=4V
Vds VS. Ciss CHARACTERISTICS 300 250 200
Vgs=3.4V Vgs=3.1V Vgs=2.8V Ta=+25C f=1MHz
8 6 4 2 0 0 2 4 6 Vds(V) 8 10
Vgs=3.7V
Ciss(pF)
Ids(A)
150 100 50 0 0 5 10 Vds(V) 15 20
Vgs=2.5V Vgs=2.2V
Vds VS. Coss CHARACTERISTICS 500 400 Coss(pF) 300 200 100 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 40
Ta=+25C f=1MHz
30 Crss(pF)
20
10
0 0 5 10 Vds(V) 15 20
RD45HMF1
MITSUBISHI ELECTRIC
2/7
REV.2 7 Apr. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD45HMF1
Pin-Po CHARACTERISTICS 70 140
Ta=25C f=900MHz Vdd=12.5V Idq=2A
Silicon MOSFET Power Transistor 900MHz,45W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Ta=+25C f=900MHz Vdd=12.5V Idq=2A
50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20
Po
100 80 Pout(W) , Idd(A) d(%) 60
60 50 40
120
Po
100 d(%) 80
d
40 20 0
30 20 10 0 0 5 10 15 Pin(W) 20 25
Idd
60 40 20 0
Gp
10 0 25 30 35 Pin(dBm) 40
45
Vdd-Po CHARACTERISTICS 100 80 60 40 20 0 4 6 8 10 Vdd(V) 12 14
Idd Ta=25C f=900MHz Pin=15W Idq=2A Zg=ZI=50 ohm
Vgs-Ids CHARACTERISTICS 2 25 20 15 10 5 0 10 8 6 4 2 0 1.5 2.5 Vgs(V) 3.5 Vds=10V Tc=-25~+75C +25C
Po
Po(W)
Idd(A)
Ids(A)
+75C -25C
RD45HMF1
MITSUBISHI ELECTRIC
3/7
REV.2 7 Apr. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W TEST CIRCUIT(f=900MHz)
V gg
V dd
C1
9.1K OHM
100OHM 8.2kOHM C1 f= 900M Hz 100pF L1 5pF 5/5pF L1 330uF,50V
RF-IN 56pF 56pF
RF-OUT
5pF
2pF
5/5pF
5/5pF
2pF
3pF
1pF
10 4 18 53 77 90 100 Dim ensions :m m 17 41 49 83 90 100 14
12 8
C1:2200pF*2 in parallel L1:1Turns,I.D3m m ,D1.5m m s ilver plateted copper wire
Note:Board m aterial-Teflon substrate M icro strip line width=4.2m m /50OHM ,er:2.7,t=1.6m m
RD45HMF1
MITSUBISHI ELECTRIC
4/7
REV.2 7 Apr. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=900MHz Zout
f=900MHz Zin
Zo=10
Zin , Zout f (MHz)
900
Zin (ohm)
1.53-j0.17
Zout (ohm)
1.63+j0.34
Conditions Po=45W, Vdd=12.5V,Pin=15W
RD45HMF1
MITSUBISHI ELECTRIC
5/7
REV.2 7 Apr. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD45HMF1
S12 S22 (ang) 0.7 -26.0 -1.0 -25.4 24.9 14.3 60.8 66.9 66.0 33.5 74.4 52.8 71.1 70.5 57.8 71.3 78.6 65.7 64.1 59.4 57.5 55.0 54.6 52.0 47.9 43.8 40.7 33.2 32.8 10.7 (mag) 0.864 0.877 0.895 0.924 0.936 0.937 0.948 0.954 0.951 0.956 0.962 0.961 0.966 0.961 0.958 0.968 0.956 0.960 0.965 0.955 0.958 0.961 0.953 0.949 0.958 0.943 0.946 0.948 0.937 0.934 (ang) -176.6 -177.8 -179.0 179.7 178.8 177.6 176.2 174.6 173.7 172.5 170.8 169.6 168.1 166.1 164.6 163.2 161.1 159.5 156.7 154.6 152.0 148.9 145.6 142.9 138.9 135.4 132.3 127.9 124.3 120.9 (mag) 0.008 0.011 0.011 0.007 0.005 0.004 0.005 0.006 0.008 0.008 0.012 0.009 0.013 0.016 0.014 0.022 0.021 0.024 0.026 0.028 0.031 0.031 0.037 0.038 0.041 0.044 0.045 0.046 0.048 0.061
Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq. [MHz] 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 S11 (mag) 0.902 0.911 0.917 0.932 0.941 0.945 0.950 0.955 0.959 0.961 0.964 0.963 0.966 0.967 0.965 0.969 0.969 0.966 0.967 0.963 0.963 0.961 0.956 0.955 0.954 0.949 0.949 0.948 0.943 0.939 (ang) -177.8 -179.0 -179.6 179.9 178.7 177.7 176.6 175.5 174.4 173.6 171.6 170.3 168.5 167.0 165.3 163.0 161.1 158.8 156.3 153.9 150.9 148.3 145.2 142.3 139.3 136.1 133.0 129.6 126.3 123.0 (mag) 4.481 2.125 1.319 0.889 0.642 0.497 0.384 0.318 0.265 0.226 0.178 0.166 0.147 0.109 0.106 0.102 0.106 0.113 0.122 0.106 0.101 0.093 0.094 0.096 0.091 0.093 0.081 0.083 0.086 0.087 S21 (ang) 77.4 63.5 52.3 43.0 35.6 30.2 23.3 18.7 15.6 11.1 9.0 7.6 2.2 0.3 8.8 16.2 10.0 4.1 -3.7 1.7 1.7 -6.4 -4.9 -6.1 -10.5 -12.6 -16.4 -19.7 -24.1 -31.6
RD45HMF1
MITSUBISHI ELECTRIC
6/7
REV.2 7 Apr. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RD45HMF1
MITSUBISHI ELECTRIC
7/7
REV.2 7 Apr. 2003

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