 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features * Low on-resistance * Low leakage current * High speed switching * Low gate charge * Avalanche ratings Outline LDPAK G w w w a .D D S S ta 1 2 3 e h 1 2 U t4 e 4 4 .c m o Rev.0 Aug.2002 4 3 1 2 H5N5006LS 3 H5N5006LD H5N5006LM 1. Gate 2. Drain 3. Source 4. Drain w w w .D at Sh a et e 4U . om c H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 Note 1 Value 500 30 3.5 14 3.5 3.5 50 2.5 150 -55 to +150 Unit V V A A A A W C/W C C Pch Note 2 ch-c Tch Tstg Rev.0, Aug. 2002, page 2 of 12 H5N5006LD, H5N5006LS, H5N5006LM Electrical Characteristics (Ta = 25C) Item Symbol Min 500 -- -- 3.0 1.8 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 3.0 2.5 365 35 8 20 13 48 14 14 2 8 0.85 280 0.8 Max -- 1 0.1 4.5 -- 3.0 -- -- -- -- -- -- -- -- -- -- 1.3 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test Conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.75 A, VDS = 10 V Note ID = 1.75 A, VGS = 10 V Note VDS = 25 V VGS = 0 f = 1 MHz VDD 250 V, ID = 1.75 A VGS = 10 V RL = 143 Rg = 10 VDD = 400 V VGS = 10 V ID = 3.5 A IF = 3.5 A, VGS = 0 IF = 3.5 A, VGS = 0 diF/dt = 100 A/s 4 4 Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Rev.0, Aug. 2002, page 3 of 12 H5N5006LD, H5N5006LS, H5N5006LM Main Characteristics Power vs. Temperature Derating 80 Pch (W) 50 20 10 10 Maximum Safe Operation Area ID (A) 60 5 2 1 0.5 PW = 10 ms(1shot) s 0 10 1 s m s Channel Dissipation 40 Drain Current 20 0.2 0.1 0.05 D (T C O c = per 25 at C ion ) Operation in this area is limited by RDS(on) 0 50 100 150 Tc (C) 200 0.02 0.01 Ta = 25C 0.005 0.1 0.3 1 3 10 30 100 300 1000 Case Temperature Drain to Source Voltage VDS (V) Typical Output Characteristics 5 Pulse Test 10 V 8V 5 Typical Transfer Characteristics V DS = 10 V Pulse Test 4 (A) 4 6V ID 3 ID 3 5.5 V Drain Current 2 Drain Current (A) 2 Tc = 75C 25C -25C 1 5V V GS = 4.5 V 1 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 0 2 4 6 Gate to Source Voltage 8 10 VGS (V) Rev.0, Aug. 2002, page 4 of 12 H5N5006LD, H5N5006LS, H5N5006LM Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 20 Pulse Test Drain to Source on State Resistance RDS(on) () Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 VGS = 10 V, 15 V 2 1 0.5 0.2 1 5 16 12 ID=3A 8 2A 4 1A 12 4 8 Gate to Source Voltage 0 0.1 16 VGS (V) 20 0.1 0.2 0.5 2 ID (A) Drain Current 10 Static Drain to Source on State Resistance RDS(on) () Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance VS. Temperature 10 Pulse Test 8 V GS = 10 V 10 5 Forward Transfer Admittance vs. Drain Current Tc = -25C 2 1 0.5 25C 75C 6 ID=3A 4 1A 2A 2 0 -40 0.2 0.1 0.1 0.2 0.5 1 V DS = 10 V Pulse Test 2 ID (A) 5 10 Drain Current 0 40 80 Tc 120 (C) 160 Cace Temperature Rev.0, Aug. 2002, page 5 of 12 H5N5006LD, H5N5006LS, H5N5006LM Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 1000 500 Typical Capacitance vs. Drain to Source Voltage Ciss VGS = 0 f = 1 MHz 500 Capacitance C (pF) 200 100 50 20 10 5 2 1 200 100 50 Coss Crss 20 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C 2 0.2 1 5 0.5 10 Reverse Drain Current IDR (A) 0 100 250 50 150 200 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1000 (V) VDS VGS 800 VDD = 100 V 250 V 400 V VDS 16 (V) I D = 3.5 A 20 1000 300 Switching Characteristics V GS = 10 V, V DD = 250 V PW = 5 s, duty < 1 % R G =10 t d(off) t d(on) VGS Switching Time t (ns) tf 100 30 10 tr 3 1 0.1 0.2 Drain to Source Voltage 600 12 400 8 200 VDD = 400 V 250 V 100 V 8 16 24 32 Gate Charge Qg (nC) 4 0 40 Gate to Source Voltage 0 0.5 1 2 5 ID (A) 10 20 Drain Current Rev.0, Aug. 2002, page 6 of 12 H5N5006LD, H5N5006LS, H5N5006LM Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage vs. Case Temperature 5 V DS = 10 V I D = 10 mA 1 mA 3 0.1 mA VGS(off) (V) Gate to Source Cutoff Voltage (A) Reverse Drain Current IDR 4 4 3 5, 10 V V GS = 0 V 1 Pulse Test 0 0.4 0.8 1.2 1.6 VSD 2.0 (V) Source to Drain Voltage 2 2 1 0 -50 0 50 100 150 Tc (C) 200 Case Temperature Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 250 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr Rev.0, Aug. 2002, page 7 of 12 H5N5006LD, H5N5006LS, H5N5006LM Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 Normalized Transient Thermal Impedance s (t) 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 2.5C/W, Tc = 25C PDM PW T 0.03 0.01 10 0.02 1 lse 0.0 pu ot h 1s D= PW T 100 1m 10 m Pulse Width PW (s) 100 m 1 10 Rev.0, Aug. 2002, page 8 of 12 H5N5006LD, H5N5006LS, H5N5006LM Package Dimensions * H5N5006LD Unit: mm 10.2 0.3 (1.4) 4.44 0.2 1.3 0.15 0.2 0.86 + 0.1 - 2.54 0.5 2.54 0.5 11.0 0.5 1.37 0.2 1.3 0.2 11.3 0.5 8.6 0.3 10.0 + 0.3 - 0.5 2.49 0.2 0.4 0.1 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK (L) -- -- 1.4 g Rev.0, Aug. 2002, page 9 of 12 H5N5006LD, H5N5006LS, H5N5006LM * H5N5006LS Unit: mm 4.44 0.2 10.2 0.3 (1.4) 8.6 0.3 + 0.3 - 0.5 10.0 (1.5) (1.5) 0.2 0.1 + 0.1 - 7.8 7.0 1.37 0.2 2.49 0.2 0.3 3.0 + 0.5 - 0.2 0.86 + 0.1 - 2.2 1.3 0.2 2.54 0.5 0.4 0.1 2.54 0.5 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK (S)-(1) -- -- 1.3 g Rev.0, Aug. 2002, page 10 of 12 1.7 1.3 0.2 7.8 6.6 H5N5006LD, H5N5006LS, H5N5006LM * H5N5006LM Unit: mm 4.44 0.2 10.2 0.3 (1.4) 8.6 0.3 + 0.3 - 0.5 10.0 (1.5) (2.3) 0.2 0.1 + 0.1 - 7.8 7.0 1.37 0.2 2.49 0.2 2.2 2.54 0.5 2.54 0.5 0.3 5.0 + 0.5 - 1.3 0.2 0.2 0.86 + 0.1 - 0.4 0.1 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g Rev.0, Aug. 2002, page 11 of 12 1.7 1.3 0.2 7.8 6.6 H5N5006LD, H5N5006LS, H5N5006LM Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.0, Aug. 2002, page 12 of 12 |
Price & Availability of H5N5006LD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |