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| APM6928 N-Channel Enhancement Mode MOSFET Features * * * * 30V/4A , RDS(ON)=15m(typ.) @ VGS=10V RDS(ON)=25m(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TSSOP-8 Package Pin Description TSSOP-8 D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Top View Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 D1 D2 G2 Ordering and Marking Information APM 6928 H a n d lin g C o d e Tem p. R ange P ackage C ode S1 S1 S2 S2 N-Channel MOSFET P ackage C ode O : T S S O P -8 O p e r a tio n J u n c tio n T e m p . R a n g e C : - 5 5 t o 1 5 0 C H a n d lin g C o d e TR : Tape & R eel A P M 6928 O : A P M 6928 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating 30 20 4 20 A V Unit Maximum Drain Current - Continuous Maximum Drain Current - Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t 10 sec. APM6928 Absolute Maximum Ratings Cont. Symbol PD TJ TSTG RjA Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA=25C (TA = 25C unless otherwise noted) Rating 1.0 150 -55 to 150 125 Unit W C C C/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25C unless otherwise noted) Parameter Test Condition APM6928 Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250A VDS=24V , VGS=0V VDS=24V, VGS=0V, Tj= 55C VDS=VGS , IDS=250A VGS=20V , VDS=0V VGS=10V , IDS=4A VGS=4.5V , IDS=3.4A ISD=1.25A , VGS=0V VDS=15V , IDS= 10A VGS=5V , 30 1 5 1 20 35 0.73 15 5.8 3.8 11 18 26 54 30 3 100 30 45 1.2 20 V A V nA m V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC VDD=15V , IDS=2A , VGEN=10V , RG=6 VGS=0V 17 37 20 1150 230 100 ns VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 2 www.anpec.com.tw APM6928 Typical Characteristics Output Characteristics 20 VGS=4,5,6,7,8,9,10V Transfer Characteristics 20 IDS-Drain Current (A) IDS-Drain Current (A) 16 15 12 10 8 5 TJ=25C TJ=125C TJ=55C 4 V GS=3V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 IDS=250A On-Resistance vs. Drain Current 0.05 1.1 RDS(ON)-On-Resistance () 0.04 VGS=4.5V VGS(th)-Variance (V) 1.0 0.9 0.8 0.7 0.6 -50 0.03 0.02 VGS=10V 0.01 -25 0 25 50 75 100 125 150 0.00 0 5 10 15 20 Tj-Junction Temperature (C) IDS-Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 3 www.anpec.com.tw APM6928 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.12 ID=4A On-Resistance vs. Junction Temperature 1.8 VGS=10V ID=4A RDS(ON)-On-Resistance () 0.10 0.08 0.06 0.04 0.02 0.00 RDS(ON)-On-Resistance () (Normalized) 2 4 6 8 10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 10 1500 VDS=15V IDS=10A Capacitance VGS-Gate-Source Voltage (V) 8 1200 Capacitance (pF) Ciss 6 900 4 600 2 300 Coss Crss 0 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 4 www.anpec.com.tw APM6928 Typical Characteristics Cont. Source-Drain Diode Forward Voltage 20 10 40 Single Pulse Power ISD-Source Current (A) 30 Power (W) 1.4 1.6 20 1 TJ=150C TJ=25C 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 0.1 1 10 30 VSD-Source to Drain Voltage (V) Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=125C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 5 www.anpec.com.tw APM6928 Packaging Information PDIP-8 pin ( Reference JEDEC Registration MS-001) D E1 1 E A L e2 e1 e3 A1 A2 1 E3 Dim Min. A A1 A2 D e1 e2 e3 E E1 E3 L 1 0.38 2.92 9.02 Millimeters Max. 5.33 3.68 10.16 2.54BSC 0.36 1.14 7.62 BSC 6.10 2.92 15 7.11 10.92 3.81 0.240 0.115 0.56 1.78 0.014 0.045 Min. 0.015 0.115 0.355 Inches Max. 0.210 0.145 0.400 0.100BSC 0.022 0.070 0.300 BSC 0.280 0.430 0.150 15 Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 6 www.anpec.com.tw APM6928 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 7 APM6928 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape Po E P1 P D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 1 B 62 +1.5 D 1.5 + 0.1 C 12.75+ 0.15 D1 1.5 + 0.1 J 2 + 0.5 Po 4.0 0.1 T1 12.4 0.2 P1 2.0 0.1 T2 2 0.2 Ao 7.0 0.1 W 12 0. 3 Bo 3.6 0.3 P 8 0.1 Ko 1.6 0.1 E 1.750.1 t 0.30.013 TSSOP-8 F 5.5 0. 1 (mm) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 8 www.anpec.com.tw APM6928 Cover Tape Dimensions Application TSSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 9 www.anpec.com.tw |
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