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 NJL5902R
COBP PHOTO REFLECTOR
GENERAL DESCRIPTION
The NJL5902R is the compact surface mount type photo reflector in which Lead (Pb)-free reflow soldering permitted (260C, 2times). The NJL5902R reduced to the operating dark current of 1/6 compared with our conventional products/NJL5901R, and has realized the high S/N ratio in the combination of the high output LED and a high sensitivity Si photo-transistor.
FEATURES
* Pb free solder re-flowing permitted: 260C, 2times * Miniature, thin, surface mount: 1.9mm x 2.6mm x 0.8mm * Operating dark current: 0.3A max. * Built-in visible light cut-off filter
OUTLINE (typ.)
2.6 1.54 0.25
Unit : mm
0.20 0.20
1.9
(1.16)
(0.62)
* High output, high S/N ratio
0.5
0.5
* Detecting the location of optical pickup head for CD/DVD * Detecting the location of lens for DSC and Cellular phone's camera module * Detecting the rotation of various motors * Paper edge detection and mechanism timing detection of facsimile, copy machine etc.
0.85
0.7
0.85
A:anode K:cathode C:collector E:emitter
PCB pattern
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER Emitter Forward Current (Continuous) Reverse Voltage (Continuous) Power Dissipation Detector Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Coupled Total Power Dissipation Operating Temperature Storage Temperature Reflow Soldering Temperature SYMBOL IF VR PD VCEO VECO IC PC Ptot Topr Tstg Tsol RATINGS 30 6 45 16 6 10 25 60 -20 to +85 -40 to +85 260 UNIT mA V mW V V mA mW mW C C C
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C)
PARAMETER Emitter Forward Voltage Reverse Current Capacitance Detector Dark Current Collector-Emitter Voltage Coupled Output Current Operating Dark Current *1 Rise Time Fall Time SYMBOL VF IR Ct ICEO VCEO IO ICEOD tr tf TEST CONDITION IF=4mA VR=6V VR=0V,f=1MHz VCE=10V IC=100A IF=4mA,VCE=2V,d=0.7mm IF=4mA,VCE=2V IO=100A,VCE=2V,RL=1K,d=0.7mm IO=100A,VCE=2V,RL=1K,d=0.7mm MIN TYP MAX 1.4 10 UNIT V A pF A V A A s s
-- -- -- --
16 90
-- --
25
--
0.2
-- -- -- --
30 30
--
250 0.3
-- -- --
-- --
*1 Icoed may increase according to the periphery situation of the surface mounted product.
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0.5 0.4 0.5
0.8
0.25
PT CENTER
LED CENTER
0.25
APPLICATIONS
0.25
0.65
0.65
0.25
0.5
0.5
0.25
(0.85)
(0.5)
0.65
0.65
NJL5902R
OUTPUT CURRENT TEST CONDITION
The infrared signal from LED is reflected at the aluminum surface.
DARK CURRENT TEST CONDITION
Light Sealed Dark Box
0.7mm Aluminum Evapolation Surface IF ICEOD IF ICEOD
VCE
VCE
RESPONSE TIME TEST CONDITION
Aluminum Evapolation Surface RD P.G IF RL Io V+
0.7mm
Input 90% Output 10%
OSC tr tf
EDGE RESPONSE TEST CONDITION
l=0mm l=0mm
0.7mm Aluminum Evaporation Surface Aluminum Evaporation Surface
0.7mm
Direction X
Direction Y
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NJL5902R
Power Dissipation vs. Temperature 100 90 80 Power Dissipation P(mW) 70 60 50 40 30 20 10 0 0 20 40 60 80 100 Ambient Temperature Ta(C) Forward Current IF(mA) 50 45 40 35 30 25 20 15 10 Forward Current vs. Temperature
Total Power Dissipation
Collector Power Dissipation
5 0 0 20 40 60 80 100 Ambient Temperature Ta(C)
TYPICAL CHARACTERISTICS
Forward Voltage vs. Forward Current 100 1.6 Forward Voltage vs. Temperature
1.4 Forward Current IF(mA) Forward Voltage VF(V)
IF=30mA
1.2
10
IF=4mA
1
1 0 1 Forward Voltage VF(V) 2
0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C)
Dark Current vs. Temperature
Operating Dark Current vs. Temperature
10000
10
1000 Operating Dark Current Iceod(A)
Dark Current Iceo(nA)
100
1
10
1
0.1
0.1
0.01
Vce=10V
0.001 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) 0.01 -40 -20 0 20
IF=4mA,Vce=2V
40 60 80 100
Ambient Temperature Ta(C)
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NJL5902R
Output Current vs. Forward Current (Ta=25C) 500 450 Relative Output Current Io/Io(25C)(%) 400 Output Current Io(A) 350 300 250 200 150 100 50 0 0 2 4 6 8 10 Forward Current IF(mA) 100 120 Output Current vs. Temperature
80
60
40
20
IVce=2V,d=0.7m
0 -40 -20 0 20
IF=4mA,Vce=2V
40
60
80
100
Ambient Temperature Ta(C)
Output Characteristics (Ta=25C) 500 450 400 Output Current Io(A) 350 300 250 200 150 100 50 0.5
Vce Saturation (Ta=25C)
IF=10mA
Collector-Emitter Voltage Vce(V) 0.4
IF=8mA
0.3
IF=6mA
0.2
Io=200A Io=150A Io=100A Io=50A
IF=4mA
0.1
IF=2mA
0 0 1 2 3 4 5 Collector-Emitter Voltage Vce(V) 0 0.1 1 Forward Current IF(mA) 10
Output Current vs. Distance (Ta=25C) 120
Output Current vs. Edge Distance(Ta=25C) 120
IF=4mA,Vce=2V
Relative Output Current Io/Io(max.)(%) 100 Relative Output Current Io/Io(max.)(%) 100
IF=4mA,Vce=2V,d=0.7mm
80
80
60
60
Direction Y
40
40
20
20
Direction X
0 0 1 2 3 4 5 Reflector Distance d(mm) 0 0 0.4 0.8 1.2 1.6 2 2.4 Edge Distance l(mm)
-4-
NJL5902R
Spectral Response (Ta=25 C) 120 1000 Switching Time vs. Load Resistance (Ta=25 C)
100
tr
Relative Response (%) 80
Vce=2V
Switching Time t(s)
100
tf
60
td
10
40
20
Vce=2V,Io=100A
0 500 1 600 700 800 900 1000 0.1 1 Load Resistance RL(k ) 10 Wavelength (nm)
-5-
NJL5902R
PRECAUTION FOR HANDLING
1. Soldering to actual circuit board Soldering condition
The surface temperature of plastic package is lower than 260C.
Soldering Method
1) Reflow Method Soldering to be done within twice under the recommended condition mentioned below
f 260C 230C 220C 180C 150C e d
a : Temperature ramping rate b : Pre-heating temperature time c : Temperature ramping rate d : 220C or higher time e : 230C or higher time f : Peak temperature g : Temperature ramping rate
: 1 to 4C/s : 150 to 180C : 60 to 120s : 1 to 4C /s : Shorter than 60s : Shorter than 40s : Lower than 260C : 1 to 6C /s
The temperature of the surface of mold package
Room Temp. a b c g
2) Reflow Method (In case of infrared heating) The temperature profile is same as the above
Avoid direct irradiation to the plastic package because it may absorb the Infrared Radiation and its surface temperature will be higher than the lead.
3) The other method Avoid rapid heating up like dipping the devices directly into the melting solder or vapor phase method (VPS). Solder the device in short time as soon as possible. If the device is heated and kept in high temperature for longer time, its reliability would be affected.
2. Cleaning
Avoid washing the device after soldering by reflow method.
3. Attention in handling
1) Treat not to touch the lens surface. 2) Avoid dust and any other foreign materials on the lens surface such as paint, bonding material, etc.
4. Storage
Mount the device as soon as possible after opening the envelope. In order to prevent from degradation by the moisture at the reflow process, the device is contained in damp proof packaging.
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
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