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ISL9R3060G2, ISL9R3060P2 May 2002 ISL9R3060G2, ISL9R3060P2 30A, 600V StealthTM Diode General Description The ISL9R3060G2 and ISL9R3060P2 are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49411. Features * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode Package JEDEC STYLE TO-247 ANODE CATHODE CATHODE (BOTTOM SIDE METAL) CATHODE (FLANGE) ANODE CATHODE Symbol JEDEC TO-220AC K A Device Maximum Ratings TC = 25C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 125oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 30 70 325 200 20 -55 to 175 300 260 Units V V V A A A W mJ C C C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2002 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C ISL9R3060G2, ISL9R3060P2 Package Marking and Ordering Information Device Marking R3060G2 R3060P2 Device ISL9R3060G2 ISL9R3060P2 Package TO-247 TO-220AC Tape Width Quantity - Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 600V TC = 25C TC = 125C 100 1.0 A mA On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25C TC = 125C 2.1 1.7 2.4 2.1 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 120 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 30A, dIF/dt = 100A/s, VR = 30V IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 30A, dIF/dt = 1000A/s, VR = 390V, TC = 125C 27 36 36 2.9 55 110 1.9 6 450 60 1.25 21 730 800 35 45 A nC A/s A nC ns ns ns ns A nC ns Thermal Characteristics RJC RJA RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247 Thermal Resistance Junction to Ambient TO-220 1.0 30 62 C/W C/W C/W 1560(c)2002 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C ISL9R3060G2, ISL9R3060P2 Typical Performance Curves 60 175 C 50 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 150oC 40 125 C 30 o o 5000 175oC 1000 25oC 150oC 125oC 100 100oC 75oC 10 20 100oC 10 1 25oC 0.1 100 0 0 0.5 1.0 1.5 2.0 2.5 3.0 200 300 400 500 600 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 100 VR = 390V, TJ = 125oC Figure 2. Reverse Current vs Reverse Voltage 120 VR = 390V, TJ = 125oC 100 t, RECOVERY TIMES (ns) tb AT IF = 60A, 30A, 15A 80 90 tb AT dIF/dt = 200A/s, 500A/s, 800A/s 80 t, RECOVERY TIMES (ns) 70 60 50 40 30 20 10 0 0 10 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 20 30 40 50 60 0 200 60 40 20 ta AT IF = 60A, 30A, 15A 400 600 800 1000 1200 1400 dIF /dt, CURRENT RATE OF CHANGE (A/s) 1600 IF, FORWARD CURRENT (A) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 20 18 16 14 12 10 8 dIF/dt = 200A/s 6 4 dIF/dt = 500A/s IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 30 Figure 4. ta and tb Curves vs dIF/dt VR = 390V, TJ = 125oC dIF/dt = 800A/s VR = 390V, TJ = 125oC 25 IF = 30A 20 IF = 60A IF = 15A 15 10 5 0 200 0 10 20 30 40 50 60 400 600 800 1000 1200 1400 1600 IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs dIF/dt 1560(c)2002 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C ISL9R3060G2, ISL9R3060P2 Typical Performance Curves (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR QRR, REVERSE RECOVERED CHARGE (nC) 2.5 IF = 60A VR = 390V, TJ = 125oC 1200 VR = 390V, TJ = 125oC 1000 IF = 60A 2.0 IF = 30A 800 IF = 30A 1.5 IF = 15A 1.0 600 IF = 15A 400 0.5 200 400 600 800 1000 1200 1400 1600 200 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF/dt 1000 Figure 8. Reverse Recovered Charge vs dIF/dt 35 IF(AV), AVERAGE FORWARD CURRENT (A) CJ , JUNCTION CAPACITANCE (pF) 30 25 20 15 10 5 0 115 800 600 400 200 125 135 145 155 165 175 0 0.1 1 10 100 VR , REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (oC) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve 1.0 THERMAL IMPEDANCE ZJA, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance 1560(c)2002 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C ISL9R3060G2, ISL9R3060P2 Test Circuit and Waveforms Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE + MOSFET VDD 0 0.25 IRM IRM dIF dt ta trr tb VGE t1 t2 - Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL IL IL t0 t1 t2 t Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms 1560(c)2002 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5 |
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