View FQP11N40C_498681.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FQP11N40C/FQPF11N40C
QFET
FQP11N40C/FQPF11N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
(R)
Features
* * * * * * 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 85pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!

G! GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FQP11N40C 10.5 6.6 42
FQPF11N40C 400 10.5 * 6.6 * 42 * 30 360 11 13.5 4.5
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
135 1.07 -55 to +150 300
44 0.35
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP11N40C 0.93 0.5 62.5 FQPF11N40C 2.86 -62.5 Units C/W C/W C/W
(c)2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQP11N40C/FQPF11N40C
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 ------0.54 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.25 A VDS = 40 V, ID = 5.25 A
(Note 4)
2.0 ---
-0.5 7.1
4.0 0.53 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---840 250 85 1090 325 110 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 10.5 A, VGS = 10 V
(Note 4, 5)
VDD = 200 V, ID = 10.5 A, RG = 25
(Note 4, 5)
--------
14 89 81 81 28 4 15
40 190 170 170 35 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/s
(Note 4)
------
---290 2.4
10.5 42 1.4 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
(c)2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQP11N40C/FQPF11N40C
Typical Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
1
150 C
o
o
25 C
10
0
o
-55 C
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.0
VGS = 10V
RDS(ON) [ ], Drain-Source On-Resistance
1.5
1.0
IDR , Reverse Drain Current [A]
10
1
10
0
VGS = 20V
0.5
Note : TJ = 25
150 25
-1
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0
5
10
15
20
25
30
35
40
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
2000 1800 1600
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 100V VDS = 250V
1400
Ciss Coss
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
1200 1000 800 600 400 200 0 -1 10
VDS = 400V
6
Crss
Notes ; 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 10.5A
0
10
0
10
1
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
(c)2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQP11N40C/FQPF11N40C
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 5.25 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
10
2
Operation in This Area is Limited by R DS(on)
10
2
Operation in This Area is Limited by R DS(on)
10 s 100 s
10 s 100 s
10
1
ID, Drain Current [A]
10
1
10 ms 100 ms DC
ID, Drain Current [A]
1 ms
1 ms 10 ms 100 ms DC
10
0
10
0
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
10
0
-2
10
10
1
10
2
10
3
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area for FQP11N40C
Figure 9-2. Maximum Safe Operating Area for FQPF11N40C
12
10
ID, Drain Current [A]
8
6
4
2
0 25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current vs Case Temperature
(c)2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQP11N40C/FQPF11N40C
Typical Characteristics
(Continued)
10
0
(t), T h e rm a l R e s p o n s e
D = 0 .5
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N o te s : 1 . Z JC t) = 0 .9 3 /W M a x . ( 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z J C t) (
JC
PDM t1 t2
Z
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve for FQP11N40C
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
N o te s : ( 1 . Z J C t ) = 2 .8 6 / W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z J C t) (
0 .0 2 0 .0 1
PDM t1
s in g le p u ls e
Z
JC
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF11N40C
(c)2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQP11N40C/FQPF11N40C
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg 10V Qgs Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG DUT
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp
ID (t) VDS (t) Time
10V
(c)2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQP11N40C/FQPF11N40C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
(c)2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQP11N40C/FQPF11N40C
Package Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. B, January 2004
FQP11N40C/FQPF11N40C
Package Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. B, January 2004
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet seriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FPSTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM EnSignaTM I2CTM ImpliedDisconnectTM FACTTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I7

▲Up To Search▲

Price & Availability of FQP11N40C

	To Download FQP11N40C Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .