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| SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=35A. E35A23VS, E35A23VR STACK SILICON DIFFUSED DIODE A3 A2 D3 A1 D1 D2 B1 E F G POLARITY E35A23VS (+ Type) E35A23VR (- Type) T C2 H MAXIMUM RATING (Ta=25 CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Peak Reverse Surge Current (IRSM/2=10ms) Peak Revese Over Voltage Peak Revese Voltage Junction Temperature Storage Temperature Range ) SYMBOL IF(AV) IFSM IRSM VRSM VRM Tj Tstg RATING 35 450 (50Hz) 70 70 17 -40 200 -40 150 UNIT A A A V V DIM A1 A2 A3 B1 B2 C1 C2 D1 MILLIMETERS _ 10.0 + 0.3 _ 13.5 + 0.3 _ 24.0 + 0.5 _ 8.5 + 0.3 _ 10.0 + 0.3 _ 2.0 + 0.3 _ 5.0 + 0.3 _ 2.5 + 0.3 DIM D2 D3 E F G H T MILLIMETERS _ 5.0 + 0.3 _ 4.5 + 0.3 _ 1.9 + 0.3 _ 9.0 + 0.3 _ 1.0 + 0.3 _ 4.4 + 0.5 _ 0.6 + 0.3 MR ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Zener Voltage Repetitive Peak Reverse Curren Transient Thermal Resistance Reverse Leakage Current Under High Temperature Reverse recovery Time Temperature Resistance Thermal runway Temperature Temperature Coefficient ) TEST CONDITION IFM=100A IZ=10mA VR=VRM IFM=100A, Pw=100mS Ta=150 , VR=VRM IF=100mA, -IR=100mA 90% Recovery Point DC total junction to case VR=17V, IR=5mA IR=10mA MIN. 20 200 TYP. 23 18 MAX. 1.05 26 10 90 2.5 5.0 1.0 mV/ UNIT V V A mV mA S /W SYMBOL VFM VZ IRRM IRRM HIR Trr Rth Trwy T 2001. 2. 8 Revision No : 0 C1 B2 Zener Voltage : 23V(Typ.) 1/1 |
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