![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 4.00.2 Unit: mm s Features q q q 0.70.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -30 -20 -5 -60 -30 300 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitanse (Ta=25C) Symbol ICBO ICEO IEBO hFE * Conditions VCB = -10V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 VCE = -10V, IC = -1mA IC = -10mA, IB = -1mA VCE = -10V, IC = -1mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 1mA, f = 5MHz VCB = -10V, IE = 1mA, f = 2MHz VCE = -10V, IC = -1mA, f = 10.7MHz min typ max - 0.1 -100 -10 2.00.2 marking +0.2 0.45-0.1 s Absolute Maximum Ratings (Ta=25C) 15.60.5 Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. 3.00.2 Unit A A A 70 - 0.1 - 0.7 150 300 2.8 22 1.2 220 V V MHz 4.0 50 2.0 dB pF VCE(sat) VBE fT NF Zrb Cre *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC -- Ta 500 -24 Ta=25C 450 -20 IB=-250A -50 2SA1323 IC -- VCE -60 VCE=-10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 -200A -16 -150A -12 -100A Collector current IC (mA) -40 25C Ta=75C -30 -25C -8 -20 -4 -50A -10 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 Ta=75C -1 25C -25C IC/IB=10 -120 hFE -- IC 400 VCE=-10V 350 300 250 200 150 100 50 0 - 0.1 - 0.3 0 0.1 fT -- IE Ta=25C VCB=-10V Forward current transfer ratio hFE -100 Ta=75C -80 25C -25C -60 - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 -40 -20 -1 -3 -10 -30 -100 -1 -3 -10 -30 -100 Transition frequency fT (MHz) 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB Common emitter reverse transfer capacitance Cre (pF) 5 6 Cre -- VCE f=1MHz IE=0 Ta=25C IC=-1mA f=10.7MHz Ta=25C 24 PG -- IC VCE=-10V f=100MHz Ta=25C Collector output capacitance Cob (pF) 4 5 20 4 Power gain PG (dB) -3 -10 -30 -100 16 3 3 12 2 2 8 1 1 4 0 -1 -3 -10 -30 -100 0 -1 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Collector current IC (mA) 2 Transistor NF -- IE 6 VCB=-10V f=100MHz Ta=25C 2SA1323 5 Noise figure NF (dB) 4 3 2 1 0 - 0.1 - 0.3 -1 -3 -10 Emitter current IE (mA) 3 |
Price & Availability of 2SA1323
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |