 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary RF3118 3V 1900MHZ LINEAR AMPLIFIER MODULE 2 Typical Applications * 3V CDMA US-PCS Handsets * 3V CDMA2000/1X PCS Handsets * Compatible with Qualcomm Chipset * Spread-Spectrum Systems 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spreadspectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3118 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 u Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Input/Output Internally Matched@50 * Single 3V Supply * 29dBm Linear Output Power * 27dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT * 34% Linear Efficiency * 50mA Idle Current VREG 3 4 VMODE 5 VCC2 Ordering Information RF3118 RF3118 PCBA 3V 1900MHz Linear Amplifier Module Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A0 011016 2-273 RF3118 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT 29dBm) Control Voltage (VREG) Preliminary Rating +8.0 +5.2 +4.2 +3.5 +10 -30 to +110 -30 to +150 Unit VDC VDC VDC VDC dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Mode Voltage (VMODE) Input RF Power Operating Case Temperature Storage Temperature Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Typical Performance at VCC =3.2V, VREG =3.0V TAMB =25oC, Frequency=1850MHz to 1910MHz (unless otherwise specified) 1850 25 1910 27 -40 -50 29 34 -48 -60 2:1 28 MHz dB dBc dBc dBm % dBc dBc POUT =28dBm ACPR @1.25MHz, POUT =28dBm ACPR @2.25MHz, POUT =28dBm No damage. No oscillations. >-70dBc At 80MHz offset. Typical Performance at VCC =3.2V, VREG =3.0V TAMB =25oC, Frequency=1850MHz to 1910MHz (unless otherwise specified) -46 -57 10:1 6:1 -141 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Input VSWR Output VSWR 1850 15 1910 19 -40 -50 20 -55 -72 2:1 -46 -60 10:1 6:1 MHz dB dBc dBc dBm dBc dBc 16 ACPR @1.25MHz, POUT =16dBm ACPR @1.25MHz, POUT =16dBm No damage. No oscillations. >-70dBc 2-274 Rev A0 011016 Preliminary Parameter DC Supply Supply Voltage Quiescent Current VREG Current VMODE Current Turn On/Off Time (RF) Total Current (Power Down) VREG "Low" Voltage VREG "High" Voltage VMODE "Low" Voltage VMODE "High" Voltage 0 2.9 0 2.0 3.2 3.7 160 50 4.2 200 60 8 1 6 10 5 0.5 3.1 0.5 3.0 V mA mA mA mA s A A V V V V RF3118 Specification Min. Typ. Max. Unit TAMB =25oC VMODE =Low VREG =3.0V, VCC =3.2V VMODE =High, VREG =3.0V, VCC =3.2V Condition 2 POWER AMPLIFIERS VREG =Low, VMODE =Low 3.0 Rev A0 011016 2-275 RF3118 Pin 1 2 3 Function VCC1 RF IN VREG VMODE VCC2 RF OUT GND GND Description First stage collector supply. A low frequency decoupling capacitor (e.g., 1F) is required. RF input internally matched to 50. This input is internally AC-coupled. Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (<0.5V). For nominal operation (High Power Mode), VMODE is set LOW. When set HIGH, devices are turned off to improve efficiency. Output stage collector supply. A low frequency decoupling capacitor (e.g., 1F) is required. RF output internally matched to 50. This output is internally AC-coupled. Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Preliminary Interface Schematic 2 POWER AMPLIFIERS 4 5 6 7 Pkg Base 2-276 Rev A0 011016 Preliminary Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 C2 4.7 F J2 RF IN 50 strip 2 6 50 strip 1 7 RF3118 VREG C4 4.7 F 3 C3 4.7 F 4 5 C2 4.7 F VMODE VCC2 Rev A0 011016 2-277 POWER AMPLIFIERS J6 RF OUT 2 RF3118 Evaluation Board Layout Board Size 1.5" x 1.5" Preliminary Board Thickness 0.032", Board Material FR-4, Multi-Layer, Ground Plane at 0.014" 2 POWER AMPLIFIERS 2-278 Rev A0 011016 |
Price & Availability of RF3118
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |