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 BPX 80 BPX 82 ... 89
NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays
BPX 80 BPX 82 ... 89
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 440 nm bis 1070 nm q Hohe Linearitat q Mehrstellige Zeilenbauform aus klarem Epoxy q Gruppiert lieferbar Anwendungen
q Miniaturlichtschranken fur Gleich- und
Features q Especially suitable for applications from 440 nm to 1070 nm q High linearitat q Multiple-digit array package of transparent epoxy q Available in groups Applications
q q q q
Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q "Messen/Steuern/Regeln"
Miniature photointerrupters Punched tape reading Industrial electronics For control and drive circuits
Semiconductor Group
1
03.96
feo06367
fez06365
BPX 80 BPX 82 ... 89
Typ Type
Transistoren pro Zeile Number of Transistors per Array min 2 3 4 5 6 7 8 9 10 4.5 7.0 9.6 12.1 14.6 17.2 19.7 22.3 24.8
Mae "A" Dimensions "A" max 4.9 7.4 10 12.5 15 17.6 20.1 22.7 25.2
Bestellnummer Ordering Code
BPX 82 BPX 83 BPX 84 BPX 85 BPX 86 BPX 87 BPX 88 BPX 89 BPX 80
Q62702-P21 Q62702-P25 Q62702-P30 Q62702-P31 Q62702-P22 Q62702-P32 Q62702-P33 Q62702-P26 Q62702-P28
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 3 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 5 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C
Top; Tstg TS
TS
300
C
VCE IC
32 50
V mA
Semiconductor Group
2
BPX 80 BPX 82 ... 89
Grenzwerte Maximum Ratings (cont'd) Bezeichnung Description Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value 200 90 750 Einheit Unit mA mW K/W
ICS Ptot RthJA
Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol S max Wert Value 850 440 ... 1070 Einheit Unit nm nm
A LxB LxW H
0.17 0.6 x 0.6 1.3 ... 1.9
mm2 mm x mm mm
18 6
Grad deg. pF
CCE
ICEO
25 ( 200)
nA
Semiconductor Group
3
BPX 80 BPX 82 ... 89
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures Bezeichnung Description Symbol Symbol -A Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 -B Werte Value -C Einheit Unit
0.32 ... 0.63 0.40 ... 0.80 0.5 1.7 2.2 2.7 5.5 6 8
mA mA s
t r, t f
VCEsat
150
150
150
mV
Die gelieferten Bauelemente sind mit -A, -B, -C gekennzeichnet. Wegen Ausbeuteschwankungen ist jedoch die Bestellung einer definierten Gruppe -A, -B, -C nicht moglich. For delivery the components are marked -A, -B, -C. Due to differing yields, it is not possible to order a definite group.
1) 1)
IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group
Semiconductor Group
4
BPX 80 BPX 82 ... 89
Relative spectral sensitivity Srel = f ()
Photocurrent IPCE = f (Ee), VCE = 5 V
Total power dissipation Ptot = f (TA)
Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V
Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0
Directional characteristics Srel = f ()
Semiconductor Group
5


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