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| BPY 64 P Silizium-Fotoelement Silicon Photovoltaic Cell BPY 64 P Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 420 nm bis 1060 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht uberzogen q Weiter Temperaturbereich Anwendungen q fur Me-, Steuer- und Regelzwecke q zur Abtastung von Lichtimpulsen q quantitative Lichtmessung im sichtbaren Features q Especially suitable for applications from 420 nm to 1060 nm q Cathode = back contact q Coated with a humidity-proof protective layer q Wide temperature range Applications q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the Licht- und nahen Infrarotbereich visible light and near infrared range Typ Type BPY 64 P Bestellnummer Ordering Code Q60215-Y67 Semiconductor Group 197 10.95 fso06636 BPY 64 P Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Symbol Wert Value - 55 ... + 100 1 Einheit Unit C V Top; Tstg VR Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 0 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessungen der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 1 V; E = 0 Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Symbol Symbol S S max Wert Value 0.25 ( 0.18) 850 420 ... 1060 Einheit Unit A/Ix nm nm A LxB LxW IR S 0.36 5.98 x 5.98 cm2 mm 60 4 ( 80) 0.50 0.72 450 ( 280) 0.25 ( 0.18) Grad deg. A A/W Electrons Photon mV mA VO ISC Semiconductor Group 198 BPY 64 P Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 1 k; VR = 1 V; = 850 nm; Ip = 50 A Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Kapazitat, VR = 1 V, f = 1 MHz, Ev = 0 Ix Capacitance Relative spectral sensitivity Srel = f () Symbol Symbol Wert Value 5 Einheit Unit s tr, tf TCV TCI C0 - 2.6 0.2 3 mV/K %/K nF Open-circuit voltage VO = f (Ev ) Short-circuit current ISC = f (Ev ) Capacitance C = f (VR), f = 1 MHz, E = 0 Directional characteristics Srel = f () Semiconductor Group 199 |
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