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 PD - 95633
IRF7420PBF
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
VDSS
-12V
RDS(on) max
14m@VGS = -4.5V 17.5m@VGS = -2.5V 26m@VGS = -1.8V
ID
-11.5A -9.8A -8.1A
Description
These P-Channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
S
1 2 3 4 8 7
A D D D D
S
S G
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -11.5 -9.2 -46 2.5 1.6 20 8 -55 to +150
Units
V A W mW/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
50
Units
C/W
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1
8/11/04
IRF7420PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
RDS(on)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -12 --- --- -0.4 32 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 38 8.1 8.7 8.8 8.8 291 225 3529 1013 656
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 14 VGS = -4.5V, ID = -11.5A 17.5 m VGS = -2.5V, ID = -9.8A 26 VGS = -1.8V, ID = -8.1A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -11.5A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -11.5A --- nC VDS = -6V --- VGS = -4.5V 13 VDD = -6V, VGS = -4.5V ns 13 ID = -1.0A 437 RD = 6 338 RG = 6 --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 62 61 -2.5 -46 -1.2 93 92 V ns C A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board, t 10sec.
Pulse width 400s; duty cycle 2%.
2
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IRF7420PBF
100 100
VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
1
1
-1.0V 20s PULSE WIDTH Tj = 150C
0.1
-1.0V 20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
0.1 0.1 1 10 100
-VDS Drain-to-Source Voltage (V) ,
-VDS Drain-to-Source Voltage (V) ,
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
2.0
ID = -11.5A
-I D , Drain-to-Source Current (A)
1.5
10
T = 150 C J
1.0
1
TJ = 25 C
0.5
0.1 0.5
V DS = -10V 20s PULSE WIDTH 1.0 1.5 2.0 2.5
-VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7420PBF
5500 5000 4500
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
6
ID = -11.5A
5
V DS=-9.6V V DS=-6V
C, Capacitance(pF)
4000 3500 3000 2500 2000 1500 1000 500 0 1
Ciss
Coss = Cds + Cgd
4
3
Coss Crss
2
1
0
10
100
0
10
20
30
40
50
-VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 150 C
-ID , Drain Current (A) I
100 100us
1
TJ = 25 C
10
1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7420PBF
12
VDS VGS
RD
-ID , Drain Current (A)
9
6
VGS
Pulse Width 1 s Duty Factor 0.1 %
3
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
VGS
0
25
50
TC , Case Temperature ( C)
75
100
125
150
10%
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response(Z thJA )
D = 0.50 10 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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+
-
RG
D.U.T. VDD
5
IRF7420PBF
( RDS(on) Drain-to -Source On Resistance) ,
0.025
0.020
RDS ( on ) , Drain-to-Source On Resistance ) (
0.08
0.06 VGS = -1.8V 0.04
0.015
ID = -11.5A
0.010
0.02
VGS = -2.5V
0.005 0.0 2.0 4.0 6.0 8.0
0 0.0 10.0 20.0
VGS = -4.5V 30.0 40.0 50.0
-VGS, Gate -to -Source Voltage (V)
-ID , Drain Current ( A )
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
IRF7420PBF
1.0 0.9 0.8
400 350 300
-VGS(th) ( V )
ID = -250A
Power (W)
0.7 0.6 0.5 0.4 0.3 0.2 -75 -50 -25 0 25 50
250 200 150 100 50 0
75
100
125
150
0.0001
0.0010
0.0100 0.1000
1.0000 10.0000 100.0000
TJ , Temperature ( C )
Time (sec)
Fig 15. Typical Vgs(th) Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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7
IRF7420PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F 7101
8
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IRF7420PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04
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9


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