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| Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Dauergleichstrom DC forward current Stostrom Grenzwert surge forward current Grenzlastintegral I t - value 2 VRRM I RMSmax TC = 80C tP = 10 ms, Tvj = tP = 10 ms, Tvj = 25C 25C Id I FSM It 2 1600 60 15 315 260 500 340 V A A A A As As 2 2 tP = 10 ms, Tvj = 150C tP = 10 ms, Tvj = 150C Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I 2t - value Tc = 80 C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125C IF I FRM I 2t 15 30 60 A A A2s Tc = 80 C TC = 25 C tP = 1 ms, TC = 25C TC = 80 C VCES I C,nom. IC I CRM Ptot VGES 1200 15 25 30 100 +/- 20V V A A A W V Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Andreas Schulz approved by: Robert Severin Tc = 80 C tP = 1 ms IF I FRM 10 20 A A TC = 80 C TC = 25 C tP = 1 ms, TC = 80C TC = 25C VCES I C,nom. IC I CRM Ptot VGES 1200 10 18 20 80 +/- 20V V A A A W V date of publication:10.08.2001 revision: 1 1(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Tvj = 150C, Tvj = 150C Tvj = 150C Tvj = 150C, TC = 25C VR = 1600 V IF = 15 A VF V(TO) rT IR RAA'+CC' min. - typ. 0,95 2 5 max. 0,8 10,5 V V m mA m Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data VCE = VGE, Tvj = 25C, min. IC = IC = IC = 15 A 15 A 0,5 mA VGE(TO) Cies 1200 V I CES I GES 600 V 75 Ohm 75 Ohm 600 V 75 Ohm 75 Ohm 600 V 75 Ohm 75 Ohm 600 V 75 Ohm 75 Ohm 600 V 75 Ohm 45 nH 600 V 75 Ohm 45 nH 75 Ohm 720 V I SC Eoff Eon tf td,off tr td,on VCE sat 5,0 - typ. 1,7 2 5,8 1,1 - max. 2,2 6,5 5 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25C, VCE = VCE = 0V, VGE =20V, Tvj =25C I C = INenn, VCC = VGE = 15V, Tvj = 25C, RG = VGE = 15V, Tvj = 125C, RG = I C = INenn, VCC = VGE = 15V, Tvj = 25C, RG = VGE = 15V, Tvj = 125C, RG = I C = INenn, VCC = VGE = 15V, Tvj = 25C, RG = VGE = 15V, Tvj = 125C, RG = I C = INenn, VCC = VGE = 15V, Tvj = 25C, RG = VGE = 15V, Tvj = 125C, RG = I C = INenn, VCC = LS = I C = INenn, VCC = LS = tP 10s, VGE 15V, Tvj125C, RG = VCC = VGE = 15V, Tvj = 125C, RG = VGE = 15V, Tvj = 125C, RG = 85 90 30 45 420 520 65 90 2,1 - ns ns ns ns ns ns ns ns mWs 1,5 - mWs 60 - A 2(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy TC = 25C LCE RCC'+EE' - typ. 7 max. 100 nH m min. VGE = 0V, Tvj = 25C, VGE = 0V, Tvj = 125C, I F=INenn, IF = IF = 15 A 15 A 400 A/s 600 V 600 V 400 A/s 600 V 600 V 400 A/s 600 V 600 V ERQ Qr I RM VF - typ. 1,65 1,65 16 15 1,8 3 0,55 1,1 max. 2,2 V V A A As As mWs mWs - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = I F=INenn, - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = I F=INenn, - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut off current Gate-Emitter Reststrom gate-emitter leakage current Schaltverluste und -bedingungen Switching losses and conditions VCE = VGE, Tvj = 25C, min. IC = IC = IC = 10 A 10 A 0,3 mA VGE(TO) Cies 1200 V I CES I GES VCE sat 5,0 - typ. 1,85 2,25 5,8 0,6 5,0 - max. 2,5 6,5 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25C, VCE = VCE = 0V, VGE = 20V, Tvj = 25C siehe Wechselrichter in Dbl FP10R12KE3 see inverter in datasheet FP10R12KE3 Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, Schaltverluste und -bedingungen Switching losses and conditions NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. IF = IF = 10 A 10 A VF - typ. 1,8 1,85 max. 2,5 V V siehe Wechselrichter in Dbl FB10R12KE3 see inverter in datasheet FB10R12KE3 min. TC = 25C TC = 100C, R100 = 493 TC = 25C R2 = R1 exp [B(1/T2 - 1/T1)] R25 R/R P25 B25/50 -5 typ. 5 max. 5 20 k % mW K 3375 3(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Tvj Top Tstg Paste=1W/m*K grease=1W/m*K typ. 0,08 0,04 0,08 - max. 1 1,2 1,5 1,5 2,3 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W C C C RthJC - RthCK -40 -40 Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Gewicht weight M Al2O3 225 3 10% G 180 g Nm 4(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 30 25 Tvj = 25C Tvj = 125C 20 IC [A] 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 30 Vge=19V Vge=17V 25 Vge=15V Vge=13V Vge=11V 20 Vge=9V IC = f (VCE) Tvj = 125C IC [A] 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] 5(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data IC = f (VGE) VCE = 20 V Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) 30 25 Tj=25C 20 Tj=125C IC [A] 15 10 5 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) 30 IF = f (VF) 25 Tj = 25C Tj = 125C 20 IF [A] 15 10 5 0 0 0,5 1 1,5 2 2,5 3 VF [V] 6(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data Eon = f (IC), Eoff = f (IC), Erec = f (IC) Tj = 125C, VGE = 15 V, VCC = 600 V 75 Ohm Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 7 Eon 6 Eoff Erec 5 RGon = RGoff = E [mWs] 4 3 2 1 0 0 5 10 15 20 25 30 35 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 3 Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, VGE = +-15 V , Ic = Inenn , VCC = 600 V 2,5 Eon Eoff Erec 2 E [mWs] 1,5 1 0,5 0 0 20 40 60 80 100 120 140 RG [ ] 7(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data ZthJC = f (t) Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter 10 Zth-IGBT Zth-FWD ZthJC [K/W] 1 0,1 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) Reverse bias save operating area Inverter (RBSOA) 35 IC = f (VCE) Tvj = 125C, VGE = 15V 30 25 IC,Modul IC,Chip 20 IC [A] 15 10 5 0 0 200 400 600 800 1000 1200 1400 VCE [V] 8(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) 14 Tvj = 25C 12 Tvj = 125C 10 IC [A] 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 14 12 Tj = 25C Tj = 125C 10 IF [A] 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VF [V] 9(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data IF = f (VF) Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) 30 25 20 Tj = 25C Tj = 150C IF [A] 15 10 5 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[ ] 1000 100 0 20 40 60 80 100 120 140 160 TC [C] 10(11) DB-PIM-IGBT3_1.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3G Vorlaufige Daten Preliminary data Schaltplan/ Circuit diagram 21 22 20 1 2 3 14 23 24 7 13 19 18 4 12 17 16 5 11 10 15 6 NTC 8 9 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11) DB-PIM-IGBT3_1.xls |
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