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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Feb 05 2002 Aug 06 Philips Semiconductors Product specification L-band radar LDMOS transistor FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS * L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Top view handbook, halfpage BLL1214-250 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 2 3 MBK394 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 1 ms; = 10% f (MHz) 1200 to 1400 VDS (V) 36 IDQ (mA) 150 PL (W) 250 Gp (dB) >12 D (%) >42 pulse droop (dB) <0.6 tr (ns) <100 tf (ns) <100 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature Th 70 C; tp = 1 ms; = 10% CONDITIONS - - - -65 - MIN. MAX. 75 22 400 150 200 V V W C C UNIT 2002 Aug 06 2 Philips Semiconductors Product specification L-band radar LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Zth j-h Zth j-h Notes 1. Thermal resistance is determined under RF operating conditions; tp = 100 s, = 10%. 2. Thermal resistance is determined under RF operating conditions; tp = 1 ms, = 10%. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 3 mA VDS = 10 V; ID = 300 mA VGS = 0; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 10 A VGS = 9 V; ID = 10 A MIN. 75 4 - 45 - - - PARAMETER thermal impedance from junction to heatsink thermal impedance from junction to heatsink CONDITIONS Th = 25 C, note 1 Th = 25 C, note 2 BLL1214-250 VALUE 0.17 0.32 UNIT K/W K/W TYP. - - - - - 9 60 MAX. - 5 1 - 1 - - UNIT V V A A A S m APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Zth mb-h = 0.25 K/W, unless otherwise specified. MODE OF OPERATION Pulsed class-AB; tp = 1 ms; = 10% f (MHz) 1200 to 1400 VDS (V) 36 IDQ (mA) 150 PL (W) 250 Gp (dB) >12 D (%) >42 pulse droop (dB) <0.6 tr (ns) <100 tf (ns) <100 Ruggedness in class-AB operation The BLL1214-250 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: VDS = 36 V; frequency from 1200 MHz to 1400 MHz at rated load power. Typical impedance FREQUENCY (GHZ) 1.20 1.25 1.30 1.35 1.40 ZS () 1.3 - j 2.8 1.9 - j 2.9 4.6 - j 2.9 5.7 - j 0.3 2.7 - j 1.8 ZL () 1.1 - j 0.9 1.0 - j 0.5 0.8 - j 0.2 0.7 - j 0.3 0.6 - j 0.4 2002 Aug 06 3 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 handbook, halfpage 300 MLD858 handbook, halfpage 300 MLD859 PL (W) 200 PL (W) 200 (3) (3) (2) 100 (1) 100 (1) (2) 0 0 4 8 12 Pi (W) 16 0 0 4 8 12 Pi (W) 16 (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; = 10%. (3) f = 1.4 GHz. (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 s; = 10%. (3) f = 1.4 GHz. Fig.2 Load power as function of input power; typical values. Fig.3 Load power as function of input power; typical values. handbook, halfpage 16 MLD860 Gp (dB) (2) (3) handbook, halfpage 16 MLD861 Gp (dB) 12 (2) (3) (1) (1) 12 8 8 4 4 0 0 100 200 PL (W) 300 0 0 100 200 PL (W) 300 (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; = 10%. (3) f = 1.4 GHz. (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 s; = 10%. (3) f = 1.4 GHz. Fig.4 Power gain as function of load power; typical values. Fig.5 Power gain as function of load power; typical values. 2002 Aug 06 4 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 handbook, halfpage (1) 60 MLD862 handbook, halfpage 60 MLD863 D (%) 40 (2) (3) D (%) 40 (1) (2) (3) 20 20 0 0 100 200 PL (W) 300 0 0 100 200 PL (W) 300 (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; = 10%. (3) f = 1.4 GHz. (1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 s; = 10%. (3) f = 1.4 GHz. Fig.6 Efficiency as function of load power; typical values. Fig.7 Efficiency as function of load power; typical values. handbook, halfpage 15 Gp MLD864 60 D (%) 50 handbook, halfpage 15 Gp MLD865 60 D (%) 50 (dB) 14 D Gp (dB) 14 Gp D 13 40 13 40 12 30 12 30 11 20 11 20 10 1.15 1.25 1.35 f (GHz) 10 1.45 10 1.15 1.25 1.35 f (GHz) 10 1.45 tp = 1 ms; = 10%. tp = 100 s; = 10%. Fig.8 Power gain and drain efficiency as functions of frequency; typical values. Fig.9 Power gain and drain efficiency as functions of frequency; typical values. 2002 Aug 06 5 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 handbook, full pagewidth 40 40 60 C8 C7 C4 & C6 C3 & C5 C1 C2 MLD866 Dimensions in mm. Hatched area indicates standard tuning. Fig.10 Component layout. 2002 Aug 06 6 Philips Semiconductors Product specification L-band radar LDMOS transistor List of components (see Fig.10) COMPONENT C1, C3 C2, C4 C5, C6 C7 C8 capacitor capacitor capacitor capacitor electrolytic capacitor DESCRIPTION 39 pF 47 pF 20 nF 36 pF, 36 pF 100 F; 100 V VALUE BLL1214-250 CATALOGUE NO. ATC100A ATC100A ATC200B ATC200B 2002 Aug 06 7 Philips Semiconductors Product specification L-band radar LDMOS transistor PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads BLL1214-250 SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.99 0.186 0.157 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-10-13 99-12-28 2002 Aug 06 8 Philips Semiconductors Product specification L-band radar LDMOS transistor DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BLL1214-250 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Aug 06 9 Philips Semiconductors Product specification L-band radar LDMOS transistor NOTES BLL1214-250 2002 Aug 06 10 Philips Semiconductors Product specification L-band radar LDMOS transistor NOTES BLL1214-250 2002 Aug 06 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/02/pp12 Date of release: 2002 Aug 06 Document order number: 9397 750 09596 |
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