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| PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 PACKAGE DIMENSIONS 0.195 (4.95) QSD123 QSD124 REFERENCE SURFACE 0.305 (7.75) 0.800 (20.3) MIN EMITTER 0.040 (1.02) NOM COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES: 0.020 (0.51) SQ. (2X) 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. EMITTER DESCRIPTION The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. FEATURES * NPN Silicon Phototransistor * Package Type: T-1 3/4 * Notched Emitter: QED12X/QED22X/QED23X * Narrow Reception Angle: 24C * Daylight Filter * Package Material and Color: Black Epoxy * High Sensitivity 2001 Fairchild Semiconductor Corporation DS300361 7/20/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW QSD123 QSD124 NOTE: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. ! = 880 nm, AlGaAs. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25C) SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current(5) QSD122 QSD123 QSD124 Saturation Voltage(5) Rise Time Fall Time VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A !PS " ICEO BVCEO BVECO -- -- -- 30 5 1.00 4.00 6.00 -- -- -- 880 12 -- -- -- -- -- -- -- 7 7 -- -- 100 -- -- 6.00 16.00 -- 0.4 -- -- nm Deg. nA V V Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, IC = 0.5 mA VCC = 5 V, RL = 100 V IC = 0.2 mA IC (ON) VCE (SAT) tr tf mA V s www.fairchildsemi.com 2 OF 4 7/20/01 DS300361 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 Figure 1. Light Current vs. Radiant Intensity 100 QSD123 100 90 80 QSD124 Figure 2. Angular Response Curve 110 120 70 60 50 40 30 20 10 0 1.0 IC(ON) - Light Current (mA) 130 10 140 150 160 1 170 180 1.0 0.1 0.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0.2 0.4 0.6 2 0.8 1.0 Ee - Radiant Intensity (mW/cm ) Figure 3. Dark Current vs. Collector - Emitter Voltage 101 101 Figure 4. Light Current vs. Collector - Emitter Voltage Ie=1mW/cm 2 Ie=0.5mW/cm 2 Ie=0.2mW/cm 2 Ie=0.1mW/cm 2 10-1 ICEO - Dark Current (nA) 100 I L - Normalized Light Current 100 10-1 10-2 10-2 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25 oC 10-3 0 5 10 15 20 25 30 10-3 0.1 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 ICEO - Normalized Dark Current Normalized to: VCE = 25V 103 TA = 25 oC 102 VCE =25V VCE =10V 101 100 10-1 -40 -20 0 20 40 60 o 80 100 TA - Ambient Temperature ( C) DS300361 7/20/01 3 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 OF 4 7/20/01 DS300361 |
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