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| an AMP cormany CW Power Transistor, 2.3 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package 3.5W PH2323-3 v2.00 Absolute Maximum Ratings at 25C Parameter Symbol Rating Units Electrical Characteristics Parameter Collector-Emitter Collector-Emitter Input Power Power Gain CollectorEfficiency Input Return Loss Load Mismatch Tolerance Breakdown Voltage Leakage Current at 25C 1 Symbol 1 Min 1 Max 1 Units 1 Test Conditions BV,,, ICES PIN GP `Ic RL 60 1 1.0 1 V mA w I,=5 mA V,,=28 v V,,=28 8 30 0.48 - V, PoUT=3.0W, F=2.3 GHz -I V, P,,?3.0 V, P,LI.F3.0 dB % 1 V,,=28 1 V,,=28 W, F=2.3 GHz W, F=2.3 GHz W, F=2.3 GHz W, F=2.3 GHz 1 6 - 3:l dB - V,,=28 V,,=28 V, P,,=3.0 V, P,,,.=3.0 VSWR-T Test Fixture Impedances F(GHz) 2.30 7:s; =:XT"Rr INPLIC:RCiJ:T TES' FIXTURE JLl%JT CIRLIIT - Z,(Q) 6.5 - j23.0 z&4 6.3 + j5.4 50R - son i - PH2323-3 CW Power Transistor, 3SW v2.00 RF vTest Fixture BANANA JACKS r GROUND SHIM 2 PLACES PC BOARDS ROGERS 6610.5 .02S" 2 PLACES / JUMPER CARRIER BRASS 73050257-13 Test Fixture PC Board Dimensions |
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