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| DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 1.78 0.2 1 L L 1.78 0.2 0.5 TYP. 4 FEATURES * Low noise figure & High associated gain NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz ORDERING INFORMATION PART NUMBER NE76184A-SL NE76184A-T1 NE76184A-T1A SUPPLYING FORM STICK Tape & reel LEAD LENGTH L = 1.7 mm MIN. L = 1.0 0.2 mm 2 L 3 J L ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 V -5.0 V -6.0 V 100 mA 300 mW 150 C -65 to +150 C 1. Source 2. Drain 3. Source 4. Gate ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain Power Gain SYMBOL IGSO IDSS VGS (off) gm NF Ga Gs MIN. - 30 -0.5 20 - - - TYP. - - - 45 0.8 12 6 MAX. 10 100 -3.0 - 1.4 - - UNIT TEST CONDITIONS VGS = -5 V VDS = 3 V, VGS = 0 VDS = 3 V, ID = 100 A VDS = 3 V, ID = 10 mA VDD = 3 V ID = 10 mA f = 12 GHz f = 4 GHz A mA V mS dB dB dB IDSS rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA) Document No. P10852EJ2V0DS00 (2nd edition) (Previous No. TC-2303) Data Published October 1995 P Printed in Japan (c) 0.1 1.7 MAX. 0.5 TYP. 1991 NE76184A TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 80 VGS = 0 V 400 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Ptot - Total Power Dissipation - mW ID - Drain Current - mA 60 -0.2 V 300 40 -0.4 V 200 -0.6 V 20 -0.8 V -1.0 V 0 1 2 3 4 5 100 0 50 100 150 200 TA - Ambient Temperature - C VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 5 80 VDS = 3 V 4 NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 20 VDS = 3 V ID = 10 mA 16 60 3 Ga 12 40 2 8 20 NF 1 0 -2.0 -1.0 VGS - Gate to Source Voltage - V 0 0 2 4 6 8 10 14 30 4 f - Frequency - GHz 2 Ga - Associated Gain - dB ID - Drain Current - mA NF - Noise Figure - dB NE76184A NOISE FIGURE, ASSOCIATED GAIN vs. RATIO OF DRAIN CURRENT AND ZERO-GATE VOLTAGE CURRENT 3.0 VDS = 3 V ID = 10 mA 16 MSG VDS = 3 V f = 4 GHz 2.5 14 Ga 2.0 1.5 12 10 16 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 20 MSG - Maximum Stable Gain - dB MAG - Maximum Available Gain - dB 2 |S21s| - Forward Insertion Gain - dB 12 |S21s| 8 2 MAG 1.0 NF 8 0.5 4 0 0 1 2 4 6 8 10 12 20 1 2 4 6 8 10 6 4 40 60 80 100 20 IDS/IDSS - Ratio of Drain Current and Zero-Gate Voltage Current - % f - Frequency - GHz Gain Calculations MSG = S 21 S12 S 21 2 K K - 1 S 12 K= 1+ - S11 - S 22 2 S12 S 21 2 2 2 MSG = = S11 S 22 - S 21 S12 OUTPUT POWER vs. INPUT POWER VDS = 3 V, ID = 30 mA fin = 11 GHz +15 Pout - Output Power - dBm +10 +5 0 -5 -10 -5 0 +5 +10 Pin - Input Power - dBm 3 Ga - Associated Gain - dB NF - Noise Figure - dB NE76184A S-PARAMETERS VDS = 3 V, ID = 10 mA START 500 MHz STOP 12 GHz STEP 500 MHz S11 1.0 0.5 2.0 135 45 S12 90 3 1 180 0 0.1 0.2 0.3 -0.5 1 -1.0 -2.0 -135 0.4 0.5 -90 -45 0 2 3 0 2 0.5 1.0 S21 90 0.5 135 1 45 S22 1.0 2.0 180 0.5 0.4 0.3 0.2 0.1 0 2 0 0 0.5 3 1.0 3 2 1 -135 -90 -45 -0.5 -1.0 -2.0 Marker 1. 4 GHz 2. 8 GHz 3. 12 GHz 4 NE76184A S-PARAMETER MAG. AND ANG. VDS = 3 V, ID = 10 mA FREQUENCY MHz 500.0000 1000.0000 1500.0000 2000.0000 2500.0000 3000.0000 3500.0000 4000.0000 4500.0000 5000.0000 5500.0000 6000.0000 6500.0000 7000.0000 7500.0000 8000.0000 8500.0000 9000.0000 9500.0000 10000.0000 10500.0000 11000.0000 11500.0000 12000.0000 S11 MAG. 0.993 0.971 0.936 0.896 0.850 0.808 0.761 0.720 0.681 0.647 0.615 0.588 0.566 0.547 0.531 0.517 0.503 0.492 0.482 0.475 0.475 0.477 0.481 0.489 ANG. -14.4 -28.4 -41.9 -54.8 -67.4 -79.4 -91.3 -102.7 -113.9 -124.4 -134.9 -144.8 -154.5 -163.6 -172.4 178.7 169.6 160.5 151.1 141.3 131.5 121.6 112.1 102.7 MAG. 3.919 3.820 3.714 3.562 3.388 3.238 3.069 2.909 2.765 2.623 2.485 2.365 2.252 2.151 2.064 1.985 1.909 1.843 1.783 1.726 1.668 1.613 1.554 1.503 S21 ANG. 166.5 153.5 140.9 129.0 117.8 107.0 96.4 86.4 77.0 67.9 59.1 50.7 42.6 34.7 27.3 19.6 12.2 5.0 -2.5 -9.6 -17.0 -23.8 -31.0 -38.0 MAG. 0.022 0.042 0.061 0.079 0.092 0.103 0.112 0.120 0.125 0.127 0.131 0.131 0.133 0.135 0.136 0.139 0.141 0.143 0.148 0.152 0.156 0.160 0.165 0.170 S12 ANG. 80.3 71.6 62.0 54.1 46.4 39.9 33.5 27.5 22.2 17.6 13.6 9.6 6.5 3.7 1.9 -0.8 -3.0 -5.3 -7.3 -9.4 -11.3 -13.8 -16.2 -18.8 MAG. 0.716 0.702 0.682 0.652 0.623 0.592 0.563 0.533 0.501 0.475 0.454 0.437 0.425 0.418 0.414 0.415 0.418 0.418 0.417 0.419 0.418 0.421 0.431 0.441 S22 ANG. -9.9 -19.1 -28.2 -36.8 -44.8 -52.6 -60.9 -68.1 -75.7 -83.5 -91.4 -98.9 -107.1 -114.4 -121.8 -129.3 -136.4 -143.7 -151.0 -158.4 -166.4 -174.2 177.3 169.6 VDS = 3 V, ID = 30 mA FREQUENCY MHz 500.0000 1000.0000 1500.0000 2000.0000 2500.0000 3000.0000 3500.0000 4000.0000 4500.0000 5000.0000 5500.0000 6000.0000 6500.0000 7000.0000 7500.0000 8000.0000 8500.0000 9000.0000 9500.0000 10000.0000 10500.0000 11000.0000 11500.0000 12000.0000 S11 MAG. 0.990 0.957 0.911 0.860 0.805 0.755 0.707 0.663 0.626 0.594 0.566 0.546 0.528 0.513 0.501 0.490 0.480 0.472 0.466 0.465 0.468 0.476 0.483 0.494 ANG. -16.6 -32.6 -47.6 -62.0 -75.5 -88.4 -100.7 -112.5 -124.0 -134.8 -145.4 -155.4 -165.1 -174.3 176.9 167.9 158.9 149.8 140.6 130.8 121.2 112.0 102.7 93.9 MAG. 5.304 5.115 4.866 4.587 4.282 4.009 3.741 3.493 3.275 3.078 2.888 2.729 2.581 2.455 2.344 2.242 2.151 2.069 1.997 1.924 1.855 1.791 1.727 1.665 S21 ANG. 165.1 150.9 137.4 124.8 113.3 102.5 92.1 82.3 73.3 64.5 56.2 48.2 40.6 33.0 25.8 18.5 11.3 4.2 -2.7 -9.7 -16.8 -23.4 -30.4 -37.2 MAG. 0.019 0.037 0.052 0.065 0.075 0.085 0.092 0.097 0.103 0.107 0.110 0.114 0.118 0.122 0.128 0.133 0.139 0.147 0.153 0.161 0.168 0.175 0.182 0.189 S12 ANG. 79.5 71.5 62.3 55.0 48.7 42.9 38.2 33.6 30.2 26.7 23.3 21.3 18.6 17.1 14.8 13.1 10.6 7.6 5.5 2.2 -0.6 -4.6 -7.6 -10.6 MAG. 0.617 0.599 0.577 0.545 0.515 0.485 0.456 0.431 0.404 0.382 0.365 0.351 0.343 0.339 0.340 0.343 0.350 0.350 0.352 0.355 0.357 0.363 0.373 0.385 S22 ANG. -10.3 -19.9 -28.9 -37.4 -44.9 -52.1 -59.4 -66.6 -73.7 -81.2 -88.5 -96.3 -104.1 -111.7 -119.3 -126.8 -133.8 -141.3 -148.9 -156.2 -165.0 -173.1 178.2 169.9 5 NE76184A AMP PARAMETERS VDS = 3 V, ID = 10 mA FREQUENCY MHz 500.0000 1000.0000 1500.0000 2000.0000 2500.0000 3000.0000 3500.0000 4000.0000 4500.0000 5000.0000 5500.0000 6000.0000 6500.0000 7000.0000 7500.0000 8000.0000 8500.0000 9000.0000 9500.0000 10000.0000 10500.0000 11000.0000 11500.0000 12000.0000 GUmax. dB 33.77 27.00 23.21 20.48 18.30 16.68 15.16 13.90 12.80 11.84 10.97 10.24 9.59 9.03 8.55 8.13 7.72 7.35 7.00 6.69 6.39 6.12 5.86 5.67 GAmax. dB |S21|2 dB 11.86 11.64 11.40 11.03 10.60 10.21 9.74 9.28 8.83 8.38 7.91 7.48 7.05 6.65 6.29 5.95 5.62 5.31 5.02 4.74 4.44 4.16 3.83 3.54 |S12|2 dB -33.16 -27.43 -24.28 -22.09 -20.74 -19.78 -18.99 -18.42 -18.06 -17.91 -17.68 -17.62 -17.50 -17.40 -17.35 -17.13 -17.05 -16.87 -16.60 -16.38 -16.16 -15.89 -15.67 -15.37 K Delay ns 0.072 0.072 0.070 0.066 0.062 0.060 0.059 0.056 0.052 0.051 0.049 0.046 0.045 0.044 0.041 0.042 0.041 0.040 0.042 0.040 0.041 0.038 0.040 0.039 Mason's U dB 49.375 29.663 28.208 25.690 25.762 24.501 23.383 21.885 20.810 20.093 18.766 18.307 17.776 17.422 17.410 16.680 16.073 15.587 14.945 14.161 13.620 12.913 12.582 G1 dB 18.78 12.40 9.10 7.04 5.57 4.60 3.76 3.17 2.71 2.35 2.06 1.84 1.67 1.54 1.44 1.35 1.27 1.20 1.15 1.11 1.11 1.12 1.14 1.19 G2 dB 3.13 2.95 2.72 2.41 2.14 1.88 1.66 1.45 1.25 1.11 1.00 0.92 0.86 0.84 0.82 0.82 0.83 0.84 0.83 0.84 0.83 0.85 0.89 0.94 10.85 10.17 9.49 8.99 8.57 8.20 7.84 7.58 7.31 7.19 0.07 0.14 0.23 0.30 0.37 0.43 0.50 0.57 0.64 0.72 0.79 0.86 0.92 0.98 1.03 1.05 1.09 1.12 1.14 1.15 1.16 1.16 1.16 1.14 VDS = 3 V, ID = 30 mA FREQUENCY MHz 500.0000 1000.0000 1500.0000 2000.0000 2500.0000 3000.0000 3500.0000 4000.0000 4500.0000 5000.0000 5500.0000 6000.0000 6500.0000 7000.0000 7500.0000 8000.0000 8500.0000 9000.0000 9500.0000 10000.0000 10500.0000 11000.0000 11500.0000 12000.0000 GUmax. dB 33.74 26.88 23.20 20.60 18.51 16.90 15.48 14.27 13.24 12.34 11.51 10.83 10.19 9.66 9.16 8.75 8.35 7.98 7.65 7.33 7.03 6.79 6.55 6.34 GAmax. dB |S21|2 dB 14.49 14.18 13.74 13.23 12.63 12.06 11.46 10.86 10.30 9.76 9.21 8.72 8.24 7.80 7.40 7.01 6.65 6.32 6.01 5.68 5.37 5.06 4.75 4.43 |S12|2 dB -34.36 -28.71 -25.66 -23.68 -22.51 -21.42 -20.70 -20.27 -19.73 -19.43 -19.15 -18.90 -18.55 -18.25 -17.85 -17.50 -17.17 -16.68 -16.32 -15.87 -15.51 -15.16 -14.80 -14.48 K Delay ns 0.079 0.079 0.075 0.070 0.064 0.060 0.058 0.054 0.050 0.048 0.047 0.044 0.042 0.042 0.040 0.040 0.040 0.039 0.039 0.039 0.039 0.037 0.039 0.038 Mason's U dB 38.817 41.142 31.251 29.809 27.934 27.066 26.502 24.356 24.031 22.392 20.841 20.194 19.396 19.008 18.783 18.372 17.707 17.361 16.512 16.047 15.174 14.844 14.143 13.483 G1 dB 17.17 10.77 7.71 5.84 4.53 3.67 3.00 2.51 2.16 1.89 1.68 1.54 1.42 1.33 1.26 1.19 1.14 1.10 1.07 1.06 1.07 1.11 1.16 1.22 G2 dB 2.08 1.93 1.75 1.53 1.34 1.16 1.01 0.89 0.77 0.69 0.62 0.57 0.54 0.53 0.53 0.55 0.57 0.57 0.57 0.59 0.59 0.61 0.65 0.70 12.13 11.34 10.79 10.29 9.85 9.48 9.10 8.81 8.50 8.33 8.15 8.02 0.09 0.19 0.29 0.38 0.47 0.55 0.63 0.72 0.79 0.87 0.94 1.00 1.04 1.08 1.09 1.10 1.12 1.11 1.11 1.10 1.10 1.09 1.07 1.05 6 NE76184A NOISE PARAMETERS 1.0 VDS = 3 V ID = 10 mA 0.5 4 6 2 2.0 8 0 10 1.0 12 -0.5 14 -2.0 -1.0 START 2 GHz, STOP 14 GHz, STEP 2 GHz Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 NFMIN. (dB) 0.65 0.80 1.25 1.75 2.10 2.65 3.20 Ga (dB) 16.0 12.2 10.3 8.5 7.6 6.5 5.5 opt. Rn/50 MAG. 0.75 0.66 0.56 0.49 0.47 0.45 0.46 ANG.(deg.) 37 78 124 166 -151 -112 -64 0.52 0.42 0.33 0.20 0.28 0.49 0.56 7 NE76184A RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (IEI-1207). Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 C or below, Reflow time: 30 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limit*: None Terminal temperature: 230 C or below, Flow time: 10 seconds or below, Exposure limit*: None Symbol IR30-00 Partial heating method * Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Note Do not apply more than a single process at once, except for "Partial heating method". PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky barrier gate. Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the Japanese law concerned. Keep the Japanese law concerned and so on, especially in case of removal. 8 NE76184A [MEMO] 9 NE76184A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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