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PD -90825A
IRGMVC50U
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
Features
* * * * * * Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets
C
Ultra Fast Speed IGBT
VCES = 600V
G E
VCE(on) max = 3.0V
@VGE = 15V, IC = 27A
Description
n-ch an nel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight
TO-258AA
Max.
600 45* 27 220 180 20 200 80 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 10.5 (typical)
Units
V A
V W
C g
*Current is limited by pin diameter
Thermal Resistance
Parameter
RthJC RthJC RthCS RthJA Junction-to-Case-IGBT Junction-to-Case-Diode Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- -- -- 0.21 -- 0.625 1.0 -- 30
Test Conditions
C/W
For footnotes refer to the last page
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IRGMVC50U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 --- --- V VGE = 0V, IC = 1.0 mA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 0.6 --- V/C VGE = 0V, IC = 1.0 mA --- --- 3.0 IC = 27A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage --- --- 3.25 IC = 45A See Fig. 5 V --- --- 2.85 IC = 27A , TJ = 125C VGE(th) Gate Threshold Voltage 3.0 --- 5.5 VCE = VGE, IC = 250 A VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -13 --- mV/C VCE = VGE, IC = 250 A gfe Forward Transconductance 16 --- --- S VCE = 100V, IC = 27A --- --- 250 VGE = 0V, VCE = 480V A ICES Zero Gate Voltage Collector Current --- --- 5000 VGE = 0V, VCE = 480V, TJ = 125C IGES Gate-to-Emitter Leakage Current --- --- 100 nA VGE = 20 VFM Diode Forward Voltage Drop --- --- 1.7 IC = 27A V --- --- 1.5 IC = 27A , TJ = 125C
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- --- --- --- 0.12 1.6 1.7 24 27 180 130 2.7 6.8 Max. Units Conditions 140 IC = 27A 35 nC VCC = 300V See Fig. 8 70 VGE = 15V 50 IC = 27A, VCC = 480V 75 VGE = 15V, RG = 2.35 ns 300 Energy losses include "tail" 210 See Fig. 10, 11, 13 --- mJ --- 2.8 --- TJ = 125C --- IC = 27A, VCC = 480V ns --- VGE = 15V, RG = 2.35 --- Energy losses include "tail" mJ See Fig. 11, 13 --- --- nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz ns 100 di/dt = 200A/S, IF = 27A VR 200V 375 nC di/dt = 200A/S, IF = 27A TJ = 125C, VR 200V
Cies Coes Cres T rr Q rr
Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Peak Reverse Recovery Time Diode Peak Reverse Recovery Charge
--- 2900 --- 330 --- 41 --- --- --- ---
Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page
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IRGMVC50U
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGMVC50U
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGMVC50U
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRGMVC50U
125C
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
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IRGMVC50U
L 50V 1 00 0V VC *
D .U .T.
RL = 0 - 480V 480V 4 X IC@25C
480F 960V R
Q
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 12a - Clamped Inductive
Load Test Circuit
Fig. 12b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V Q R S
* Driver same type as D.U.T., VC = 480V
D .U .T. VC
Fig. 13a - Switching Loss
Test Circuit
Q
R
9 0%
S
1 0% 90 %
VC
t d (o ff)
Fig. 13b - Switching Loss
Waveforms
10 % IC 5% t d (o n )
tr E on E ts = ( Eo n +E o ff )
tf t=5 s E o ff
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IRGMVC50U
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
S Pulse width 5s; duty factor 0.1%.
R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10
Case Outline and Dimensions -- TO-258AA
A 4.19 [.165] 3.93 [.155] 17.65 [.695] 17.39 [.685] 6.85 [.270] 6.09 [.240]
0.12 [.005] 1.14 [.045] 0.88 [.035]
26.59 [1.047] 25.33 [ .997]
17.95 [.707] 17.70 [.697]
21.20 [.835] 20.70 [.815]
13.97 [.550] 13.46 [.530]
B R 3.68 [.145] 3.18 [.125]
8.63 [.340] 7.62 [.300]
C 3X 1.65 [.065] 1.39 [.055] CA C B 3.68 [.145] 3.43 [.135] 14.22 [.560] 11.43 [.450]
5.08 [.200] 2X
0.50 [.020] 0.25 [.010]
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHE S ]. CONT ROLLING DIME NS ION: INCH. CONF ORMS T O JE DEC OUT LINE T O-258AA BE FORE LE ADFORMING.
LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02
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