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| BUP 202 IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 202 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1000 1200 Unit V Pin 2 C Ordering Code Q67078-A4401-A2 Pin 3 E VCE IC Package TO-220 AB 1000V 12A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 12 8 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 24 16 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 10 mJ IC = 5 A, VCC = 24 V, RGE = 25 L = 3.3 mH, Tj = 25 C Power dissipation Ptot 100 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-06-1995 BUP 202 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 1 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.3 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 5 A, Tj = 25 C VGE = 15 V, IC = 5 A, Tj = 125 C VGE = 15 V, IC = 5 A, Tj = 150 C Zero gate voltage collector current ICES 100 300 A VCE = 1000 V, VGE = 0 V, Tj = 25 C VCE = 1000 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 100 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 1.7 2.5 650 50 20 - S pF 870 80 30 VCE = 20 V, IC = 1.5 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Dec-06-1995 BUP 202 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit ns 30 50 VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Rise time - tr 20 30 VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Turn-off delay time td(off) 180 270 VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Fall time tf 15 25 mWs 0.7 - VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Total turn-off loss energy Eoff VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Semiconductor Group 3 Dec-06-1995 BUP 202 Power dissipation Ptot = (TC) parameter: Tj 150 C 110 W Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 12 A 10 Ptot 90 80 70 60 IC 9 8 7 6 50 5 40 30 20 10 0 0 20 40 60 80 100 120 C 160 4 3 2 1 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 IGBT K/W A t = 30.0s p IC 10 1 100 s ZthJC 10 0 10 -1 D = 0.50 0.20 10 0 1 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 10 ms 10 -1 0 10 10 1 10 2 DC 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Dec-06-1995 BUP 202 Typ. output characteristics Typ. transfer characteristics IC = f(VCE) parameter: tp = 80 s, Tj = 125 C IC = f (VGE) parameter: tP = 80 s, VCE = 20 V, Tj = 25 C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) parameter: Tj = 25 C VCE(sat) = f (VGE) parameter: Tj = 125 C Semiconductor Group 5 Dec-06-1995 BUP 202 Typ. gate charge VGE = (QGate) parameter: IC puls = 6 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 400 V 14 12 10 8 6 4 2 0 0 10 20 30 40 50 800 V nC 65 Q Gate Typ. switching time t = f (RG), inductive load, Tj = 125 C parameter: VCE = 600 V, VGE = 15 V, IC = 5 A Semiconductor Group 6 Dec-06-1995 BUP 202 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Group 7 Dec-06-1995 |
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