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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1414-18L-252 TECHNICAL DATA FEATURES T HIGH POWER T BROAD BAND INTERNALLY MATCHED FET P1dB=42.0dBm at 13.75GHz to 14.5GHz T HIGH GAIN T HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz T LOW INTERMODULATION DISTORTION IM3(Min.)=-25dBc at Po=36dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G1dB SYMBOL P1dB ( Ta= 25C ) UNIT dBm MIN. 41.5 5.0 -25 TYP. MAX. 42.0 6.0 5.5 24 5.5 6.0 6.0 100 CONDITION VDS= 9V IDSQ4.4A dB A % f = 13.75 - 14.5GHz add IM3 Two Tone Test Po= 36.0dBm (Single Carrier Level) dBc A C VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -0.7 -5 TYP. MAX. 6000 -1.6 10.0 1.8 -2.3 2.3 gm VGSoff IDSS VGSO CONDITION VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145A Rth(c-c) Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Jan. 2004 TIM1414-18L-252 ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 11.5 60.0 175 -65 to +175 PACKAGE OUTLINE (2-11C1B) 4-R3.0 ? @ 2.0 MIN. Unit in mm @ A 0.60.15 17.00.3 21.5 MAX. . 0.1 -0.05 +0.1 11.0 MAX. 2.0 MIN. 12.90.2 3.20.3 ? Gate @ Source A Drain 0.2 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 1.70.3 2.60.3 5.0 MAX. TIM1414-18L-252 RF PERFORMANCE 41.54 41.96 42 44 41.95 41.57 Output Power vs. Frequency VDS= 9V IDSQ 4.4A Pin= 36.5dBm 43 42 41 40 Po (dBm) 39 13.5 13.75 14 14.25 14.5 14.75 15 Frequency (GHz) Output power vs. Input power 50 45 Pout(dBm) 40 35 30 25 20 15 10 15 20 25 30 35 40 Pin(dBm) 3 f=14.5GHz VDS= 9V IDSQ 4.4A 18 16 Po 14 12 10 8 6 4 2 Ids(A) Ids TIM1414-18L-252 Power Dissipation vs. Case Temperature 100 80 60 PT(W) 40 20 0 0 40 80 Tc (C) 120 160 200 IM3 vs. Output Power Characteristics -20 VDS= 9V IDSQ 4.4A f= 14.5GHz f= 5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 40 Po(dBm), Single Carrier Level 4 |
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