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| Preliminary Product Description Stanford Microdevices' SGA-6586 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable plastic package. Designed for operation at voltages as low as 5.0V, this RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-6586 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency SGA-6586 DC-2500 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features * DC-2500 MHz Operation * Single Voltage Supply * High Output Intercept: +34.0 dBm typ. at 850 MHz 35 30 25 20 15 10 5 0 100 1000 2000 3000 4000 5000 6000 dB * * * High Output Power : 21.5 dBm typ. at 850 MHz High Gain : 24.0 dB typ. at 850 MHz Internally Matched to 50 Ohms Input & Output Frequency MHz Applications * Oscillator Amplifiers * Final PA for Low Power Applications * IF/ RF Buffer Amplifier * Drivers for CATV Amplifiers Units Min. Typ. 21.5 18.1 25.6 20.3 17.2 27.8 23.3 20.2 1.1:1 1.2:1 33.8 32.5 2.6 3.4 163 4.6 5.0 5.4 Max. Symbol P 1dB Parameters: Test Conditions: Z0 = 50 Ohms, Id = 80 mA, T = 25C Output Power at 1dB Compression f = 850 MHz f = 1950 MHz f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 2500 MHz f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 2500 MHz f = DC - 2500 MHz f = DC - 2500 MHz f = 850 MHz f = 1950 MHz f = DC - 1000 MHz f = 1000 - 2500 MHz f = 1000 MHz dB m dB m dB dB dB dB dB dB dB m dB m dB dB pS V S 21 Small Signal Gain S 12 S11 S 22 IP3 NF TD VD Reverse Isolation Input VSWR Output VSWR Third Order Intercept Point Power out per tone = 3 dBm Noise Figure Group Delay Device Voltage The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101160 Rev B Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier Specification Parameter Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min 4.6 Typ. 5.0 80.0 25.8 2.5 32.2 20.9 19.9 28.0 23.8 2.7 33.8 21.5 23.3 26.5 18.4 3.1 32.2 18.0 23.7 21.4 16.7 3.7 30.2 16.8 18.2 19.7 Max. 5.4 Unit T= 25C V mA T= 25C 21.5 dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB Test Condition The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101160 Rev B 2 Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier Pin # 1 Function Description RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. GND Sames as Pin 2 Device Schematic 2 3 4 Application Schematic for Operation at 900 MHz Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 6V 12 8V 36 9V 51 12V 91 1uF 68pF R bias Vs For 8V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 33nH 50 ohm microstrip 2 1 3 100pF 4 100pF 50 ohm microstrip RF IN RF OUT Application Schematic for Operation at 1900 MHz 1uF 22pF R bias Vs 22nH 50 ohm microstrip 2 1 3 68pF 4 68pF 50 ohm microstrip RF IN RF OUT The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101160 Rev B 3 Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier S21, Id =80mA, T=25C 40 30 20 10 0 100 1000 2000 3000 4000 5000 6000 0 -1 0 S12, Id =80mA, T=25C dB dB -2 0 -3 0 -4 0 100 1000 2000 3000 4000 5000 6000 Frequency MHz S11, Id =80mA, T=25C 0 -10 0 -10 Frequency MHz S22, Id =80mA, T=25C dB -20 -30 -40 100 1000 2000 3000 4000 5000 6000 dB -20 -30 -40 100 1000 2000 3000 4000 5000 6000 Frequency MHz Frequency MHz S11, Id=80mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=80mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101160 Rev B 4 Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier S21, Id =80mA, T=-40C 40 30 20 0 -1 0 -2 0 -3 0 -4 0 100 1000 2000 3000 4000 5000 6000 100 1000 2000 3000 4000 5000 6000 S12, Id =80mA, T=-40C dB 10 0 dB Frequency MHz S11, Id =80mA, T=-40C 0 -10 Frequency MHz S22, Id =80mA, T=-40C 0 -10 dB -20 -30 -40 100 1000 2000 3000 4000 5000 6000 dB -20 -30 -40 100 1000 2000 3000 4000 5000 6000 Frequency MHz Frequency MHz S11, Id=80mA, Ta=-40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=80mA, Ta=-40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101160 Rev B 5 Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier S21, Id =80mA, T=85C 40 30 0 -1 0 S12, Id =80mA, T=85C dB 2 0 10 0 100 1000 2000 3000 4000 5000 6000 dB -2 0 -3 0 -4 0 100 1000 2000 3000 4000 5000 6000 6000 Frequency MHz S11, Id =80mA, T=85C 0 -1 0 0 -1 0 Frequency MHz S22, Id =80mA, T=85C dB -2 0 -3 0 -4 0 100 1000 2000 3000 4000 5000 6000 dB -2 0 -3 0 -4 0 100 1000 2000 3000 4000 5000 Frequency MHz Frequency MHz S11, Id=80mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=80mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101160 Rev B 6 Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier Absolute Maximum Ratings Parameter Supply Current Operating Temperature Maximum Input Power Storage Temperature Range Operating Junction Temperature Value 160 -40 to +85 +6 -40 to +150 +150 Unit mA C dB m C C Part Number Ordering Information Part Number SGA-6586 Reel Siz e 13" Devices/Reel 3000 Caution: Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Thermal Resistance (Lead-Junction): 97 C/W Package Dimensions Pin Designation 1 2 3 4 RF in GND RF out and Bias GND PCB Pad Layout The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101160 Rev B 7 |
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