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| NTE6232 Powerblock Module Description: The NTE6232 uses 2 power diodes in series and the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required. Features: D Standard Voltage D Electrically Isolated Base Plate D 3500VRMS Isolating Voltage D High Surge Capability D Large Creepage Distances Ratings and Characteristics: Average Forward Current (TC = +92C, 180 Conduction, Half Sine Wave), IF(AV) . . . . . . . . . . 100A Maximum RMS On-State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A Maximum Repetitive Peak Reverse and Off-State Blocking Voltage, VRRM, VDRM . . . . . . . . 1600V Maximum Non-Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Maximum Peak Reverse Current (TJ = +125C), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3500V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case (Per Module, DC Operation), RthJC . . . . . . . . . . . 0.22C/W Thermal Resistance, Case-to-Sink (Note 1), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1C/W Note 1. Mounting surface flat, smooth and greased. Electrical Specifications: Parameter Maximum Peak One-Cycle Non-Repetitive Surge Current Symbol IFSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms Test Conditions Sinusoidal Half Wave, 100% VRRM Reapplied, Initial TJ = +150C Sinusoidal Half Wave, No Voltage Reapplied, Initial TJ = +150C Rating 1700 1780 2020 2110 Unit A A A A Electrical Specifications (Cont'd): Parameter Maximum I2t for Fusing Symbol I2t t = 10ms t = 8.3ms t = 10ms t = 8.3ms Maximum I2pt Threshold Voltage, Low level Threshold Voltage, High level Forward Slope Resistance, Low Level Forward Slope Resistance, High Level Maximum Forward Voltage Drop I2pt VF(TO)1 VF(TO)2 rf1 rf2 VFM Test Conditions Sinusoidal Half Wave, 100% VRRM Reapplied, Initial TJ = +150C Sinusoidal Half Wave, No Voltage Reapplied, Initial TJ = +150C Rating 14450 13190 20430 18650 0.66 0.74 1.81 1.57 1.3 Unit A2s A2s A2s A2s V V m m V t = 0.1 to 10ms, no voltage reapplied TJ = +150C, (16.7% x x IT(AV) < I < x IT(AV)) TJ = +150C, ( x IT(AV) < I < 20 x x IT(AV)) TJ = +150C, (16.7% x x IT(AV) < I < x IT(AV)) TJ = +150C, ( x IT(AV) < I < 20 x x IT(AV)) TJ = +25C, IFM = x IF(AV), Av. Power = VF(TO) x IT(AV) + rf x (IF(RMS))2 Circuit Diagram 204300 A2pt AC + - AC + - .787 (20.0) .550 (14.0) .787 (20.0) .787 (20.0) .393 (10.0) M5 Screw (3 Places) 3.150 (80.0) .244 (6.2) Dia 1.180 (30.0) 1.195 (30.0) 3.620 (91.9) |
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