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| HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, T J 150C, RG = 2 W TC = 25C IXFN 44N60 VDSS = ID25 = RDS(on) = trr 250 ns 600 V 44 A 130 mW D G S S Maximum Ratings 600 600 20 30 44 176 44 60 3 5 600 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C C V~ V~ miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard package * miniBLOC, with Aluminium nitride * * * * * isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 4.5 100 TJ = 25C TJ = 125C 100 2 130 V V nA mA mA mW * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V * DC choppers * Temperature and lighting controls Advantages VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % * Easy to mount * Space savings * High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98610B (7/00) (c) 2000 IXYS All rights reserved 1-4 IXFN 44N60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 45 8900 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 330 42 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 55 110 45 330 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 65 0.21 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 44 176 1.3 250 1.4 8 A A V ns mC A IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 50A, -di/dt = 100 A/ms, VR = 100 V (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFN 44N60 Figure 1. Output Characteristics at 25OC 100 TJ = 25 C O Figure 2. Output Characteristics at 125OC 80 80 ID - Amperes ID - Amperes 60 40 20 0 VGS = 10V 9V 8V 7V 6V 5V TJ = 125OC 60 VGS = 10V 9V 8V 7V 6V 5V 40 20 0 0 4 8 12 16 20 24 0 4 8 12 16 20 24 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID 2.4 VGS = 10V TJ = 125OC Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.4 VGS = 10V RDS(ON) - Normalized 2.0 RDS(ON) - Normalized 2.0 ID = 44A 1.6 TJ = 25OC 1.6 ID = 22A 1.2 1.2 0.8 0 20 40 60 80 100 0.8 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 60 50 Figure 6. Admittance Curves 60 50 ID - Amperes ID - Amperes 40 30 20 10 0 40 30 20 10 0 3.0 TJ = 125oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees C VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXFN 44N60 Figure 7. Gate Charge 12 10 VDS = 300V ID = 30A IG = 10mA Figure 8. Capacitance Curves 10000 Ciss f = 1MHz VGS - Volts 8 6 4 2 0 Capacitance - pF Coss 1000 Crss 0 50 100 150 200 250 300 350 400 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 80 ID - Amperes TJ = 125OC 60 40 20 0 TJ = 25OC 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 1.00 R(th)JC - K/W 0.10 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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