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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 1/5 HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM112 is designed for use in general purpose amplifier and low-speed switching applications. SOT-89 Darlington Schematic C Absolute Maximum Ratings (TA=25C) * Maximum Temperatures Storage Temperature ................................................................... -55 ~ +150 C Junction Temperature .......................................................... +150 C Maximum B R1 R2 E * Maximum Power Dissipation Total Power Dissipation (TA=25C) ................................................................................................................... 1.2 W Total Power Dissipation (Printed circuit board 2mm thick, collector plating 1cm2 square or larger) ....................................................... 1.6 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ....................................................................................................................... 100 V BVCEO Collector to Emitter Voltage.................................................................................................................... 100 V BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V IC Collector Current (Continue) .............................................................................................................................. 4 A IC Collector Current (Peak) .................................................................................................................................... 6 A Thermal Characteristic Symbol Rja Characteristic Thermal Resistance, junction to ambient (TA=25 C) o Max. 104 Unit o C/W Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 1 500 Typ. Max. 1 2 2 2.5 2.8 200 pF Unit V V mA mA mA V V K IC=1mA IC=30mA VCB=100V VCE=50V VEB=5V IC=2A, IB=8mA IC=2A, VCE=4V IC=1A, VCE=4V IC=2A, VCE=4V VCB=10V, f=0.1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions HM112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 10000 125 C 1000 75 C o o Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 2/5 Current Gain & Collector Current 10000 125 C 1000 75 C o o hFE hFE 100 25 C 10 hFE @ VCE=4V 1 1 10 100 1000 10000 o 100 25 C 10 o hFE @ VCE=3V 1 1 10 100 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 10000 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 25 C 75 C 125 C o o o Saturation Voltage (mV) 1000 25 C o 125 C o 75 C o VCE(sat) @ IC=100IB 100 100 100 100 VCE(sat) @ IC=250IB 1000 10000 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 10000 10000 ON Voltage & Collcetor Current Saturation Voltage (mV) 25 C 1000 o ON Voltage (mV) 25 C 1000 125 C o o 125 C o 75 C o 75 C o VBE(sat) @ IC=250IB VBE(ON) @ VCE=4V 100 100 100 100 1000 10000 1000 10000 Collector Current IC (mA) Collector Current IC (mA) HM112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 3/5 ON Voltage & Collcetor Current 10000 10 Switching Time & Collector Current VCC=30V, IC=250IB1=-250IB2 25 C 1000 125 C o o Switching Times (us) Tstg ON Voltage (mV) 75 C o 1 Tf Ton VBE(ON) @ VCE=3V 100 100 0.1 1000 10000 1 10 Collector Current IC (mA) Collector Current (A) Capacitance & Reverse-Biased Voltage 1000 Safe Operating Area 100000 10000 Collector Current-I (mA) C Capacitance (pF) 1000 PT=1ms 100 PT=100ms PT=1s 10 100 Cob 10 0.1 1 10 100 1 1 10 100 1000 Reverse-Biased Voltage (V) Forward Voltage-VCE (V) HM112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-89 Dimension C H Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 4/5 Marking: Date Code H112 Control Code Pb Free Mark Pb-Free: " " (Note) Normal: None B 1 E F G A 2 3 D Note: Green label is used for pb-free packing J I Pin Style: 1.Base 2.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I Min. 4.40 4.05 1.50 2.40 0.36 *1.50 *3.00 1.40 0.35 Max. 4.60 4.25 1.70 2.60 0.51 1.60 0.41 *: Typical, Unit: mm 3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HM112 HSMC Product Specification |
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