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  Datasheet File OCR Text:
 Semiconductor
SRA2211M
PNP Silicon Transistor
Descriptions
* Switching application * Interface circuit and driver circuit application
Features
* * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO. SRA2211M Marking 2211 Package Code TO-92M
Outline Dimensions
4.00.1
unit :
Equivalent Circuit
3.00.1 C(OUT)
mm
0.44 REF 0.52 REF
B(IN) 14.00.40
R1
R1 = 10K
E(COMMON) 1.27 Typ. 2.54 0.1.
123
0.7 Typ.
3.00.1 3.8 Min.
0.42 Typ.
PIN Connections 1. Emitter 2. Collector 3. Base
KSR-I018-000
1
SRA2211M
Absolute maximum ratings
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
-50 -50 -5 -100 400 150 -55 150
Unit
V V V mA mW C C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance
(Ta=25C)
Symbol
ICBO IEBO hFE VCE(SAT) fT
*
Test Condition
VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA -
Min. Typ. Max.
120 -0.1 250 10 -500 -500 -0.3 -
Unit
nA nA V MHz K
R1
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
KSR-I018-000
2


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