 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IPD230N06N G OptiMOS(R) Power-Transistor Features * For dc/dc converters and sync. rectification * N-channel enhancement - normal level * 175 C operating temperature * Pb-free lead plating, RoHS compliant * Avalanche rated Product Summary V DS R DS(on),max ID 60 23 30 V m A Type IPD230N06N G Package Marking PG-TO252-3 230N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID TC=25 C 1) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 30 30 120 150 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C2) I D=30 A, R GS=25 I D=30 A, V DS=48 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 100 -55 ... 175 55/175/56 Current is limited by bondwire;with an R thJC=1.5 K/W the chip is able to carry 43 A. See figure 3 Rev. 1.0 page 1 2006-07-05 IPD230N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=50 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A V GS=20 V, V DS=0 V V GS=10 V, I D=30 A 60 2.1 3 0.01 4 1 A V 1.5 75 50 K/W Values typ. max. Unit 17 1 1 18 1.6 34 100 100 23 nA m S Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 1.0 page 2 2006-07-05 IPD230N06N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=30 A, R G=12 V GS=0 V, V DS=30 V, f =1 MHz - 860 240 64 10 25 26 24 1100 320 96 15 37 39 36 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=10 V V DD=30 V, I D=30 A, V GS=0 to 10 V - 5 2.6 9.7 12 23 5.5 9 6 3 14.6 17 31 11 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s - 0.91 39 48 30 120 1.3 48 60 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.0 page 3 2006-07-05 IPD230N06N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 120 30 100 25 80 20 P tot [W] 60 I D [A] 0 50 100 150 200 15 40 10 20 5 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 limited by on-state resistance 1 s 10 s 100 s 10 2 100 0.5 Z thJC [K/W] I D [A] 101 DC 0.2 1 ms 0.1 10 ms 10-1 0.05 0.02 100 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2006-07-05 IPD230N06N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 80 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 60 70 60 7V 6.5 V 50 5V 5.5 V I D [A] 6V 40 30 5.5 V R DS(on) [m] 50 40 6V z 30 6.5 V 7V 20 20 5V 10 V 10 0 0 1 2 3 4 5 6 7 8 10 0 10 20 30 40 50 60 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 40 8 Typ. forward transconductance g fs=f(I D); T j=25 C 50 45 40 30 35 30 20 g fs [S] 175 C 25 C I D [A] 25 20 15 10 10 5 0 0 1 2 3 4 5 6 7 0 0 10 20 30 40 50 60 V GS [V] I D [A] Rev. 1.0 page 5 2006-07-05 IPD230N06N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 70 4 3.5 490A 60 50 3 49 A R DS(on) [m] 2.5 V GS(th) [V] typ 40 2 1.5 30 98 % 20 1 10 0.5 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 0 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 102 103 Ciss 25 C 175 C 175 C 98% C [pF] I F [A] Coss 101 102 Crss 100 25 C 98% 101 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2 2.5 V DS [V] V SD [V] Rev. 1.0 page 6 2006-07-05 IPD230N06N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 102 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 10 12V 30 V 48 V 25 C 8 I AV [A] 100 C 150 C V GS [V] 101 6 4 2 0 100 100 0 10 1 5 10 15 20 25 30 t AV [s] 10 2 10 3 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS 70 Qg V BR(DSS) [V] 65 60 V g s(th) 55 Q g (th) 50 -60 -20 20 60 100 140 180 Q sw Q gs Q gd Q gate T j [C] Rev. 1.0 page 7 2006-07-05 IPD230N06N G PG-TO252-3: Outline packaging: Rev. 1.0 page 8 2006-07-05 IPD230N06N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2006-07-05 |
Price & Availability of IPD230N06NG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |