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Product Datasheet
23 - 29 GHz High Power Amplifier
TGA9070-SCC
Key Features and Performance
* * * * * * 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt (28GHz) @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4.1mm x 3.0mm
Primary Applications
* * LMDS Point-to-Point Radio
Description
The TriQuint TGA9070-SCC is a three stage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio, LMDS/LMCS and Ka-band satellite spacecraft and ground terminals. The three stage design consists of a 400 um input device driving a pair of 600 um interstage devices followed by four 600 um output devices. The TGA9070 provides greater than 1W of output power across 23-29 GHz with a typical PAE of 35%. Typical small signal gain is 23 dB. The TGA9070 requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
TABLE I RECOMMENDED MAXIMUM RATINGS SYMBOL V+ I+ PD PIN TCH TM T STG 1/ 2/ PARAMETER POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT POWER DISSIPATION INPUT CONTINUOUS WAVE POWER OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE VALUE 8V 1A 8W 20dBm 150 0C 320 0C -65 to 150 0C 2/ 3/ 1/ NOTES
Total current for all 3 stages Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET
3/
TABLE II DC PROBE TESTS (100%) (TA = 25 C + 5 C) NOTES SYMBOL 2/ IDSS1 1/ 1/ 1/ 1/ 1/ 1/ 1/ 1/ 2/ 3/ |VP1| |VP2| |VP3| |VP4| |VP5| |VBVGD1-5| |VBVGS1| TEST CONDITIONS 3/ STD STD STD STD STD STD STD STD 40 0.5 0.5 0.5 0.5 0.5 12 12 LIMITS MIN MAX 188 1.5 1.5 1.5 1.5 1.5 30 30 mA V V V V V V V UNITS
VP, VBVGD, and VBVGS are negative Subscripts are referred to Q1, Q2, Q3, Q4, Q5 accordingly. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer).
STD - Standard Test Conditions (see Table III for definitions)
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
TABLE IV ELECTRICAL CHARACTERISTICS (TA = 25C + 5C) Vd = 6V, Id = 400 mA NOTE TEST MEASUREMENT CONDITIONS 1/ F = 23 - 27 GHz F = 28 GHz F = 29 GHz F = 23 - 29 GHz F = 23 GHz F = 24 - 28 GHz F = 29 GHz INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE F = 23 - 29 GHz F = 23 - 29 GHz 19 20 19 VALUE MIN 28.5 29 28.5 TYP 30 30.5 30 35 21 23 21 -10 -10 26 28 26 MAX dBm dBm dBm % dB dB dB dB dB UNITS
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POWER OUTPUT AT 1 dB GAIN COMPRESSION POWER ADDED EFFICIENCY SMALL-SIGNAL GAIN MAGNITUDE
1/ 2/
RF Probe data is taken at 1 GHz steps P/T typically -0.02dB/C
TABLE V RELIABILITY DATA PARAMETER RJC Thermal resistance (channel to backside) BIAS CONDITIONS VD (V) ID (mA) 6 400 7 400 PDISS (W) 2.4 2.8 RJC (C/W) 22.08 22.5 TCH (C) 123 133 MTTF (HRS) > 2 E6 > 1 E6
Note: Assumes eutectic attach using 80/20 AuSn mounted to a 10mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
3
Product Datasheet
Statistical Performance Summary
34
Output Power @ 1dB C ompression (dBm )
32
30
5 th 2 5th 5 0th 7 5th
28
9 5th
26
24 23 24 25 26 F re q u e n c y (G H z ) 27 28 29
50
40
30 PAE (%)
5t h 25 th 50 th 75 th
20
95 th
10
0 23 24 25 26 F r e qu e n cy (G H z ) 27 28 29
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
4
Product Datasheet
Statistical Performance Summary
30
26
Ga in (dB )
22
5t h 25 th 50 th 75 th 95 th
18
14
10 23 24 25 26 F r e q u e n c y (G H z ) 27 28 29
0
-4
Input Return Loss (dB)
-8
5th 25 th
-1 2
50 th 75 th 95 th
-1 6
-2 0
-2 4 23 24 25 26 F r e q u e n c y (G H z ) 27 28 29
0
-4
Output Return Los s (dB )
-8
5t h 25 th
-1 2
50 th 75 th 95 th
-1 6
-2 0
-2 4 23 24 25 26 F r e q u e n c y (G H z ) 27 28 29
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
5
Product Datasheet
Mechanical Characteristics
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
6
Product Datasheet
Chip Assembly and Bonding Diagram
Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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