View RD07MVS1_450715.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
0.2+/-0.05
(0.22)
Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING
6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
4.9+/-0.15 1.0+/-0.05
*High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz *High Efficiency: 60%typ. (175MHz) *High Efficiency: 55%typ. (520MHz)
2
APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
INDEX MARK (Gate)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tj Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 Junction to case
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL IDSS IGSS VTH Pout1 D1 Pout2 D2 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance
w
w
w
.D
t a
S a
e h
RATINGS 30 +/- 20 50 1.5 3 150 -40 to +125 2.5
t e
U 4
C C C/W
0.2+/-0.05
0.9+/-0.1
.c
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
UNIT V V W W A
(Tc=25C, UNLESS OTHERWISE NOTED)
CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(PinControl) f=175MHz,Idq=700mA,Zg=50 Load VSWR=20:1(All Phase) VDD=9.2V,Po=7W(PinControl) f=520MHz,Idq=750mA,Zg=50 Load VSWR=20:1(All Phase) MIN 1.4 7 55 7 50 LIMITS TYP MAX. 200 1 1.7 2.4 8 60 8 55 No destroy UNIT uA uA V W % W % -
Load VSWR tolerance
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
RD07MVS1
MITSUBISHI ELECTRIC 1/8
w
w
w
.D
at
Sh a
et e
4U
-
.
om c
REV.7 2 Apr. 2004
(0.22)
(0.25)
m o
3
(0.25)
3.5+/-0.05
2.0+/-0.05
FEATURES
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0
Ta=+25C Vds=10V
Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
60 CHANNEL DISSIPATION Pch(W) 50 40 30 20 10 0
On PCB(*1)
0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
On PCB(*1) with Heat-sink
0
1
2 3 Vgs(V)
4
5
Vds-Ids CHARACTERISTICS 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10
Vgs=5V Ta=+25C Vgs=4.5V
Vds VS. Ciss CHARACTERISTICS 160 140 120 Ciss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Ids(A)
Vgs=4V Vgs=3.5V
Vgs=3V
Vds VS. Coss CHARACTERISTICS 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0
Ta=+25C f=1MHz
Crss(pF)
5
10 Vds(V)
15
20
RD07MVS1
MITSUBISHI ELECTRIC 2/8
REV.7 2 Apr. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Pin -Po C HA RA C T ERIST IC S @ f =175M Hz
Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS
Pin -Po C HA RA C T ERIST IC S @ f =175M Hz
12.0 40
Ta= + 25C f= 175M H z Vdd= 7.2V Idq= 700m A Po
100
Po d
80 10.0 80
Po(dBm) , Gp(dB) , Idd(A )
d(% )
20
40
6.0 4.0
Idd
Ta= 25C f= 175M H z Vdd= 7.2V Idq= 700m A
60
10
20 2.0 0 -5 0 5 10 15 Pin(dBm) 20 25 30 0.0 0 200 400
40
0
20 600 800 1000 Pin(mW )
Pin -Po C HA RA C T ERIST IC S @ f =520M Hz
Pin -Po C HA RA C T ERIST IC S @ f =520M Hz
14.0 40
Ta= + 25C f= 520M H z Vdd= 7.2V Idq= 750m A Po
100
Po
80
12.0 10.0
d
90 80
Po(dBm) , Gp(dB) , Idd(A )
Pout(W) , Idd(A )
30
Gp
60
d(% )
Ta= 25C
20
40
6.0 4.0 2.0
f= 520M H z Vdd= 7.2V Idq= 750m A Idd
60 50 40 30
10
20
0 0 5 10 15 20 Pin(dBm) 25 30
0
0.0 0.0 0.5 Pin(W ) 1.0 1.5
V d d - Po C HA RA C T ERIST IC S @ f =175M Hz
V d d - Po C HA RA C T ERIST IC S @ f =520M Hz
30
Ta= 25C f= 175M H z Po
6 5 4
25
Ta= 25C f= 520M H z Po Pin= 0.7W Icq= 750m A Zg= ZI= 50 ohm Idd
5
25 20
Pin= 0.3W Icq= 700m A Zg= ZI= 50 ohm Idd
20
4
15
3
Idd(A )
Po(W)
15 10 5 0 4 6 8 10 12 14 V dd(V )
3 2 1 0
Po(W)
10
2
5
1
0 4 6 8 10 12 14 V dd(V )
0
RD07MVS1
MITSUBISHI ELECTRIC 3/8
REV.7 2 Apr. 2004
Idd(A )
d(% )
8.0
70
d(% )
Gp
Pout(W) , Idd(A )
30
60
8.0
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2 10 8 6 4 2 0 2 3 Vgs(V) 4 5
Vds=10V Tc=-25~+75C -25C +25C
RD07MVS1
Ids(A)
+75C
MITSUBISHI ELECTRIC 4/8
REV.7 2 Apr. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Vdd
Silicon MOSFET Power Transistor,175MHz,520MHz,7W TEST CIRCUIT(f=175MHz)
Vgg
C1 W 19mm 4 .7 kO HM R F -in 1 9 .5 m m 2 4 .5 m m R D 0 7 MV S 1 1 7 5 MHz
19mm W 22pF L
C2
1 0 uF ,5 0 V
1 m m 1 1 .5 m m 3 m m 6 8 O HM
6 .5 m m 2 8 .5 m m 3 .5 m m 1 1 .5 m m
10mm
5mm R F -o ut
62pF 16pF 56pF
5mm 62pF 140pF 100pF
22pF 180pF
L : E nam e le d wire 7 T urns,D :0 .4 3 m m ,2 .4 6 m m O .D C 1 ,C 2 :1 0 0 0 p F ,0 .0 2 2 uF in p aralle l
No te :B o ard m ate rial- T e flo n sub strate Mic ro s trip line wid th=2 .2 m m /5 0 O HM,e r:2 .7 ,t=0 .8 m m W :line wid th=1 .0 m m
TEST CIRCUIT(f=520MHz)
Vgg Vdd
C1 W 1 9m m 4 .7 kO HM R F -in 4 6m m 6 8p F 3 7p F 1 0p F 2 0p F 6 pF 1 8p F 9mm R D 0 7MV S 1 5 20 MHz 3 .5 m m 3 .5 m m 3 .5 m m 2 0p F 1 9m m W L 6 .5 m m 6 .5 m m
C2
1 0uF ,5 0 V
4 4.5 m m R F -out 6 8p F
L : E nam e led wire 5T urns,D :0 .4 3 m m ,2 .46 m m O .D C 1 ,C 2:1 00 0 pF ,0.0 22 uF in p arallel
No te :B oard m aterial- Te flon subs trate Micro strip line wid th=2 .2 m m /50 O HM,e r:2 .7,t=0.8 m m W :ine width=1 .0m m
RD07MVS1
MITSUBISHI ELECTRIC 5/8
REV.7 2 Apr. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout* Zo=10
Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W
Zin*=1.55+j5.53 Zout*=3.24-j0.26 175MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance
175MHz Zout*
520MHz Zin* Zout* Zo=10
Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W
Zin*=0.76+j0.06 Zout*=1.61-j0.52
520MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance
520MHz Zout*
RD07MVS1
MITSUBISHI ELECTRIC 6/8
REV.7 2 Apr. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
S12 S22 (ang) -3.6 -8.5 -9.6 -10.9 -12.7 -15.3 -15.8 -14.2 -14.8 -9.6 -7.7 -5.6 0.4 17.1 21.8 40.9 52.0 67.1 72.6 85.8 85.1 89.8 93.4 (mag) 0.790 0.801 0.802 0.815 0.844 0.843 0.860 0.879 0.882 0.895 0.901 0.906 0.907 0.916 0.923 0.921 0.930 0.933 0.932 0.937 0.938 0.938 0.940 (ang) -172.8 -174.0 -174.1 -174.0 -174.1 -174.1 -174.4 -175.0 -175.1 -175.5 -175.8 -176.2 -176.6 -177.2 -177.6 -178.0 -178.8 -178.9 -179.3 179.8 179.7 179.3 178.2 (mag) 0.016 0.015 0.015 0.014 0.014 0.012 0.011 0.010 0.009 0.008 0.007 0.007 0.006 0.006 0.005 0.005 0.004 0.005 0.005 0.006 0.007 0.008 0.009
Silicon MOSFET Power Transistor,175MHz,520MHz,7W RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.890 0.897 0.899 0.901 0.907 0.913 0.918 0.924 0.928 0.933 0.935 0.937 0.940 0.942 0.944 0.947 0.948 0.949 0.951 0.951 0.952 0.950 0.952 (ang) -174.1 -175.6 -176.0 -176.3 -176.7 -177.0 -177.3 -177.8 -178.0 -178.3 -178.5 -178.8 -179.2 -179.4 -179.8 179.8 179.4 179.0 178.6 178.2 177.9 177.4 176.9 (mag) 5.508 3.613 3.028 2.604 2.019 1.614 1.308 1.102 0.929 0.790 0.753 0.692 0.595 0.529 0.467 0.416 0.374 0.343 0.304 0.284 0.262 0.234 0.226 S21 (ang) 82.1 75.0 72.4 70.1 65.6 60.7 57.1 54.1 50.1 48.6 47.6 45.3 43.6 42.4 40.2 39.4 38.6 37.6 36.5 37.6 35.1 36.0 35.8
RD07MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=750mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.883 0.891 0.894 0.897 0.906 0.914 0.920 0.927 0.932 0.937 0.938 0.940 0.944 0.946 0.948 0.950 0.951 0.953 0.954 0.954 0.954 0.952 0.954 (ang) -172.1 -174.1 -174.6 -175.0 -175.6 -176.0 -176.4 -177.0 -177.4 -177.8 -178.0 -178.3 -178.8 -179.1 -179.5 -179.9 179.6 179.2 178.8 178.4 178.0 177.5 177.0 (mag) 6.013 3.914 3.269 2.798 2.144 1.697 1.361 1.134 0.949 0.800 0.761 0.697 0.594 0.527 0.464 0.412 0.368 0.336 0.297 0.276 0.254 0.226 0.219 S21 (ang) 81.0 72.8 69.8 67.2 62.1 56.9 53.0 49.9 45.8 44.2 43.2 41.1 39.3 38.2 36.1 35.5 34.5 33.6 32.3 33.8 31.1 32.2 32.0 (mag) 0.017 0.016 0.016 0.015 0.014 0.012 0.011 0.010 0.009 0.007 0.007 0.006 0.005 0.004 0.004 0.004 0.004 0.004 0.005 0.006 0.006 0.007 0.008 S12 (ang) -5.3 -10.7 -13.1 -14.9 -18.3 -20.4 -21.6 -21.2 -21.8 -16.9 -16.0 -13.3 -7.2 4.5 17.4 28.0 56.9 66.4 78.3 87.4 90.9 94.7 98.0 (mag) 0.748 0.765 0.769 0.786 0.822 0.828 0.848 0.871 0.876 0.892 0.898 0.904 0.906 0.917 0.924 0.922 0.931 0.934 0.933 0.939 0.941 0.940 0.943 S22 (ang) -170.4 -171.4 -171.4 -171.3 -171.4 -171.6 -172.0 -172.9 -173.2 -173.7 -174.1 -174.6 -175.1 -175.9 -176.3 -176.9 -177.8 -178.0 -178.3 -179.4 -179.5 -179.9 178.9
RD07MVS1
MITSUBISHI ELECTRIC 7/8
REV.7 2 Apr. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD07MVS1
MITSUBISHI ELECTRIC 8/8
REV.7 2 Apr. 2004

▲Up To Search▲

Price & Availability of RD07MVS1

	To Download RD07MVS1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .