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WTN9973 Surface Mount N-Channel Enhancement Mode Power MOSFET 2,4 DRAIN DRAIN CURRENT 3.9 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE 1 GATE 3 SOURCE 4 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 1 2 Features: *Super high dense cell design for low RDS(ON) RDS(ON)<80m@VGS=10V *Simple Drive Requirement *Low Gate Charge *SOT-223 Package 3 SOT-223 ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Unless Otherwise Specified) Symbol VDS VGS ID IDM PD RJA TJ, Tstg Value 60 Unit V 20 3.9 2.5 20 2.7 45 -55~+150 W /W A Continuous Drain Current3 ,VGS@10V(TA=25) ,VGS@10V(TA=70) Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ) Maximum Junction-ambient3 Operating Junction and Storage Temperature Range Device Marking WTN9973=9973 http:www.weitron.com.tw WEITRON 1/6 19-Apr-05 WTN9973 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250A Gate-Source Threshold Voltage VDS=VGS,ID=250A Gate-Source Leakage Current VGS= 20V Drain-Source Leakage Current(Tj=25) VDS=60V,VGS=0 Drain-Source Leakage Current(Tj=70) VDS=48V,VGS=0 Drain-Source On-Resistance VGS=10V,ID=3.9A VGS= VDS= V,I = D V,I D= A A gfs Forward Transconductance 2 V(BR)DSS VGS IGSS 60 1.0 - - V 3.0 nA 100 1 IDSS 25 A RDS(on) - 3.5 80 100 - m S Dynamic Input Capacitance VGS=0V,VDS=25V,f=1.0MHz Output Capacitance VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=25V,f=1.0MHz Ciss Coss Crss 700 80 50 1120 pF http:www.weitron.com.tw WEITRON 2/6 19-Apr-05 WTN9937 Switching Turn-on Delay Time2 VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Turn-off Delay Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Fall Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Total Gate Charge2 VDS=48V,VGS=4.5V,ID=3.9A Gate-Source Charge VDS=48V,VGS=4.5V,ID=3.9A Gate-Source Change VDS=48V,VGS=4.5V,ID=3.9A td(on) 8 4 20 6 8 2 4 ns td (off) 13 nC tr tf Qg Qgs Qgd Source-Drain Diode Characteristics Forward On Voltage2 =0V, Reverse Recovery Time VGS=0V, VGS=0V dl/dt=100A/s ,dl/dt=100A/s Reverse Recovery Charge VSD 28 35 1.2 V ns nC Trr Qrr Note: 1. Pulse width limited by max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135/W when mounted on min, copper pad. WEITRON http:www.weitron.com.tw 3/6 19-Apr-05 WTN9973 40 35 TA=25C 10V 6.0V 30 TA=160C 10V 6.0V 5.0V 4.5V 25 ID ,DRAIN CURRENT (A) 4.5V ID ,Drain Current (A) 30 25 20 15 10 5 0 0 1 2 3 4 5 6 5.0V 20 15 10 5 0 VG=3.0V VG=3.0V 7 8 0 1 FIG.1 Typical Output Characteristics 95 90 85 2.5 VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) 2 3 4 5 6 7 8 ID = 3.9A TA = 25C Normalized RDs(on) 2.0 1.5 1.0 0.5 0.0 ID = 3.9A VG = 10V RDs(on) (m) 80 75 70 3 Fig.3 On-Resistance v.s. Gate Voltage 4 2.5 VGS ,Gate-to-source Voltage(V) 5 7 9 11 -50 0 50 100 150 Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) 3 2.0 RDs(on) (m) 2 RDs(on) (m) 1.4 Tj = 150C Tj = 25C 1.5 1 1.0 0 0 0.2 Fig.5 Forward Characteristics of Reverse Diode VDS ,Source-to-Drain Voltage(V) 0.4 0.6 0.8 1 1.2 0.5 -50 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 19-Apr-05 WTN9973 14 10000 f = 1.0MHz VGS , Gate to Source Voltage(V) 12 10 8 6 4 2 0 ID = 3.9A VDS = 30V VDS = 38V VDS = 48V C(pF) 1000 Ciss 100 Coss Crss 0 4 8 12 16 20 0 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100 QG , Total Gate Charge(nC) VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 10 Normalized Thermal Response(R ja) 0.1 0.1 0.05 0.02 0.01 PDM ID(A) 1 1ms 10ms t T 0.01 0.1 100ms TA = 25C Single Pulse Is DC Duty factor = t / T Peak Tj=PDM x R ju + Tu R ja=135C / W Single pulse 0.001 0.01 0.1 VDS , Drain-to-Source Voltage(V) 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 t, Pulse Width(s) Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG QGS QGD 4.5V 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 19-Apr-05 WTN9973 SOT-223 Outline Dimensions unit:mm A F DIM 4 S 1 2 3 B L D G C H M K J A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 WEITRON http://www.weitron.com.tw 6/6 19-Apr-05 |
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