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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS ID25 RDS(on) = 800 V = 9A = 1.1 trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 800 800 20 30 9 36 9 20 700 5 180 -55 ... +150 150 -55 ... +150 V V V V A A TO-247 AD (IXFH) TO-268 (D3) ( IXFT) A mJ mJ V/ns W C C C C Nm/lb.in. g g Features l l G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions 300 1.13/10 6 4 Symbol Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 3.0 5.0 100 TJ = 25C TJ = 125C 50 1 1.1 V V nA A mA l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 2.5 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V l IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % Easy to mount Space savings High power density (c) 1999 IXYS All rights reserved 98629 (6/99) IXFH IXFT Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 5 2200 VGS = 0 V, VDS = 25 V, f = 1 MHz 240 41 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 (External), 20 42 13 56 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 17 22 0.7 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC 1 2 3 9N80Q 9N80Q TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 36 1.5 A A V TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 0.75 7.5 250 ns C A Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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