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FLL21E180IU High Voltage - High Power GaAs FET FEATURES *E Voltage Operation : VDS=28V High *E Gain: 15.0dB(typ.) at Pout=46dBm(Avg.) High *E Broad Frequency Range : 2100 to 2200MHz *E Proven Reliability DESCRIPTION The FLL21E180IU is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station. This product is ideally suited for W-CDMA base station amplifiers while offering high gain long term reliability and ease for use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25 oC Rating 32 -3 230 -65 to +175 200 Unit V V W oC oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25 oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition RG=1 RG=1 Limit <28 <705 >-64 155 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Item Symbol Condition min. Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Inter modulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Thermal Resistance Vp VGSO IM3 Gp d ACLR Rth VDS=5V IDS=150mA IGS=-1.5mA VDS=28V IDS(DC)=1.7A Pout=46dBm(Avg.) note Channel to Case -0.1 -5 14.0 - Limit Typ. Max. -0.2 -34 15.0 26.0 -35 0.55 -0.5 -30 0.65 Unit V V dBc dB % dBc oC /W Note 1 : IM3 ACLR and Gain test condition as follows: IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-164ch non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz. ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at fo+/-5MHz. Edition 1.2 Mar 2004 1 FLL21E180IU High Voltage - High Power GaAs FET Output Power vs. Frequency @VDS=28V IDS=1.7A Pulse RF Test : P.W. 1msec ,duty=10% Output Power vs. Input Power @VDS=28V IDS=2A f=2.14GHz Pulse RF Test : P.W. 1msec ,duty=10% 54 52 Output Power [dBm] 2 2.05 2.1 2.15 2.2 2.25 2.3 Frequency [GHz] Pin=20dBm Pin=36dBm Pin=25dBm Pin=39.5dBm Pin=30dBm P1dB 54 52 50 48 46 44 42 40 38 36 34 32 Output Power [dBm] 50 48 46 44 42 40 38 36 34 18 20 22 24 26 28 30 32 34 36 38 40 42 Input Power [dBm] Two-Carrier IMD(ACLR), Drain Efficiency vs. Output Power @VDS=28V IDS=1.7A fo=2.1325, f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation -25 -30 -35 IMD [dBc] -40 -45 -50 -55 -60 28 30 32 34 36 38 40 42 44 46 48 Output Power [dBm] IM3 IM5 Drain Efficiency 35 30 Drain Efficiency [%] Single-Carrier ACLR , Drain Efficiency vs. Output Power @VDS=28V IDS=1.7A fo=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation -25 -30 ACLR [dBc] -35 -40 -45 -50 -55 -60 28 30 32 34 36 38 40 42 44 46 48 Output Power [dBm] +/-5MHz +/-10MHz Drain Efficiency 35 30 25 20 15 10 5 0 Drain Efficiency [%] 25 20 15 10 5 0 2 FLL21E180IU High Voltage - High Power GaAs FET S-Parameters @VDS=28V IDS=850mA f=1.7 to 3 GHz 1port Parameters +50j +25j 10 +100j 25 +10j 2.0GHz 50 100 +250j 0 2.2 2.2 * 2.1 2.0GHz -250j 2.1 -10j -25j -50j -100j S11 S22 +90 2.1 2.0GHz 2.2 6 180 8 Scale for |S21| 0 0.3 0.4 -90 Scale for |S 12| S12 S21 !freq(GHz)S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang) 0.1 0.967 177.2 1.369 157.7 0.001 51.2 0.774 -165.8 0.2 0.941 175.5 1.739 115.0 0.002 32.4 0.912 -173.7 0.3 0.942 175.3 1.321 68.1 0.003 10.1 0.907 -178.7 0.4 0.949 173.9 0.882 40.6 0.002 19.4 0.913 179.1 0.5 0.952 171.9 0.611 21.9 0.001 -28.8 0.921 177.3 1 0.945 161.9 0.314 -21.0 0.002 35.5 0.934 167.6 1.1 0.946 158.7 0.325 -28.5 0.002 45.3 0.929 165.1 1.2 0.945 155.4 0.359 -35.4 0.004 26.5 0.930 162.7 1.3 0.937 151.4 0.413 -43.8 0.005 40.8 0.931 160.1 1.4 0.927 146.0 0.511 -53.2 0.005 37.8 0.926 157.0 1.5 0.911 139.6 0.670 -64.5 0.007 20.0 0.911 152.9 1.6 0.879 130.2 0.931 -79.0 0.009 1.8 0.886 147.9 1.7 0.823 116.8 1.409 -97.0 0.012 -9.9 0.858 142.1 1.8 0.709 95.2 2.294 -122.0 0.017 -34.6 0.821 133.6 1.9 0.528 55.1 3.916 -158.4 0.023 -71.4 0.755 119.0 1.95 0.430 18.6 5.021 177.5 0.024 -102.7 0.672 106.4 2 0.411 -33.4 6.086 148.8 0.025 -136.5 0.520 88.9 2.05 0.493 -82.7 6.662 116.6 0.023 -175.4 0.273 65.9 2.1 0.584 -117.8 6.406 85.6 0.017 142.4 0.030 -60.7 2.11 0.596 -122.9 6.314 79.7 0.016 126.0 0.071 -108.9 2.12 0.608 -128.2 6.184 74.2 0.015 120.0 0.119 -122.9 2.13 0.615 -132.7 6.062 68.9 0.014 110.5 0.166 -129.9 2.14 0.624 -136.9 5.921 63.5 0.012 101.8 0.212 -135.5 2.15 0.627 -140.7 5.726 58.8 0.013 93.5 0.254 -139.5 2.16 0.632 -144.4 5.583 53.8 0.012 80.1 0.294 -143.5 2.17 0.636 -147.8 5.431 49.2 0.012 71.6 0.332 -147.1 2.18 0.634 -150.7 5.226 45.0 0.012 56.2 0.366 -150.2 2.19 0.640 -153.5 5.122 40.7 0.011 57.9 0.397 -152.7 2.2 0.638 -156.1 4.975 36.8 0.012 39.2 0.428 -155.8 2.25 0.632 -167.2 4.354 18.1 0.011 3.8 0.545 -167.2 2.3 0.618 -175.7 3.859 1.9 0.014 -21.7 0.626 -176.1 2.35 0.594 177.2 3.517 -12.8 0.015 -37.4 0.687 175.7 2.4 0.560 170.7 3.317 -26.9 0.017 -58.6 0.725 168.6 2.5 0.442 159.1 3.140 -54.8 0.021 -90.4 0.771 154.2 2.6 0.238 158.4 3.187 -87.1 0.025 -120.5 0.783 138.0 2.7 0.225 -130.2 3.095 -124.9 0.029 -159.7 0.736 118.1 2.8 0.521 -129.2 2.670 -164.1 0.027 163.0 0.648 95.0 2.9 0.713 -143.9 2.123 159.6 0.023 131.1 0.568 66.3 3 0.811 -156.1 1.664 126.9 0.018 104.2 0.515 26.4 3 FLL21E180IU High Voltage - High Power GaAs FET BOARD LAYOUT |
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