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DATA SHEET DATA SHEET
SILICON TRANSISTOR
2SC4095
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DESCRIPTION
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. excellent associated gain and very wide dynamic range. This allows
2.90.2 (1.8) 0.85 0.95
PACKAGE DIMENSIONS (Units: mm)
0.4 -0.05 0.4 -0.05 0.4 0.16 -0.06
+0.1
2.8 -0.3 +0.2 1.5 -0.1 2 3 4 5 0 to 0.1 5
+0.2 +0.1
+0.1
* NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA * S21e2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
1.1-0.1 0.8
+0.2
0.6 -0.05
+0.1
5
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure
VCBO VCEO VEBO IC PT Tj Tstg
SYMBOL ICBO IEBO hFE fT Cre 50
20 10 1.5 35 200 150
V V V mA mW
5
65 to +150
MIN. TYP.
C C
MAX. 1.0 1.0 UNIT
PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter
ELECTRICAL CHARACTERISTICS (TA = 25 C)
TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 10 mA GHz 0.8 pF dB dB 3.0 dB VCE = 6 V, IC = 10 mA f = 1.0 GHz VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 6 V, IC = 10 mA, f = 2.0 GHz VCE = 6 V, IC = 10 mA, f = 2.0 GHz VCE = 6 V, IC = 5 mA, f = 2.0 GHz
A A
100 10 0.25
250
S21e
MAG NF
2
7.5
9.5 12 1.8
hFE Classification
Class Marking hFE R46/RDF * R46 50 to 100 R47/RDG * R47 80 to 160 R48/RDH * R48 125 to 250 * Old Specification / New Specification
Document No. P10367EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan
(c)
+0.1 -0.05
FEATURES
1
(1.9)
1987
2SC4095
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.0
PT-Total Power Dissipation-mW
FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 GHz
Cre-Feed-back Capacitance-pF
Free Air 200 0.5
1
100
0.2
0.1 0.06 1
0
50
100
150 2 5 10 VCB-Collector to Base Voltage-V 20
TA-Ambient Temperature-C
DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 6 V 16 18
INSERTION GAIN vs. COLLECTOR CURRENT VCE = 6 V f = 1.0 GHz
|S21e|2-Insertion Gain-dB
100
hFE-DC Current Gain
14 12 10 8 6 4 f = 2.0 GHz
50
20
10 0.5
1
5
10
50
2 0 0.2 0.5 1 2 5 10 20 30
IC-Collector Current-mA
IC-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT 30 VCE = 6 V
fT-Gain Bandwidth Product-MHz
MAXIMUM AVAILABLE GAIN, INSERTION GAIN vs. FREQUENCY 30 VCE = 6 V fC = 10 mA
|S21e|2-Insetion Gain -dB MAG-Maximum Available Gain-dB
20 MAG 20 |S21e|2
10
5
10
2
1
2
5
10
20
30
0 0.1
0.2
0.5
1.0
2.0 3.0
IC-Collector Current-mA
f-Frequency-GHz
2
2SC4095
NOISE FIGURE vs. COLLECTOR CURRENT 7 6
NF-Noise Figure-dB
VCE = 10 V f = 2.0 GHz
5 4 3 2 1 0 0.5
1
5
10
50 70
IC-Collector Current-mA
S-PARAMETER
VCE = 6.0 V, IC = 3.0 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000
S11
0.870 0.747 0.628 0.516 0.400 0.327 0.262 0.231 0.205 0.196
S11 24.2 44.6 59.8 75.1 87.7 103.4 118.7 135.5 155.3 170.6
S21
9.193 7.780 7.058 5.675 5.180 4.269 3.950 3.406 3.290 2.867
S21
155.6 136.6 122.1 109.4 99.6 89.8 81.7 74.0 66.4 60.8
S12
0.031 0.040 0.064 0.066 0.090 0.084 0.106 0.105 0.126 0.124
S12
53.6 66.2 54.7 56.0 49.4 47.9 48.5 42.1 46.4 40.9
S22
0.946 0.876 0.816 0.743 0.689 0.654 0.604 0.581 0.548 0.529
S22 12.8 20.7 26.4 30.9 33.0 35.7 37.7 41.5 43.9 47.1
VCE 6.0 V, IC = 10.0 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000
S11
0.671 0.458 0.319 .0239 0.172 0.149 0.131 0.132 0.150 0.163
S11 43.5 68.7 83.7 101.9 119.3 141.4 163.0
179.6 160.0 150.1
S21
18.685 12.702 9.895 7.275 6.261 5.038 4.597 3.927 3.743 3.233
S21
137.9 115.2 102.8 92.3 85.1 77.4 71.0 64.8 58.8 54.5
S12
0.023 0.029 0.046 0.049 0.067 0.070 0.088 0.094 0.113 0.115
S12
52.1 62.2 54.4 63.1 58.6 57.9 56.1 54.0 55.3 50.0
S22
0.832 0.710 0.649 0.600 0.578 0.559 0.527 0.514 0.494 0.478
S22 19.0 23.9 26.0 27.5 28.4 30.3 32.5 35.7 38.1 41.6
3
2SC4095
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 6 V, IC = 10/3 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)
0.10 0.40 110
0.7
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD TION COEF WAR FLEC FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN-160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 00 E ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C
5 0.
07 0. 3 4 0. 0 13
1.6
8 0.0 2 0.4 20 1
0.9
1.0
0.8
1.2
9 0.0 1 0.4
0.11 0.39 100
0.12 0.38
0.13 0.37
90
0.14 0.36 80
0.15 0.35
70
1.4
0.1 6 0.3 4
6 00
1.8
0.1 0.3 7 3
0.
2.0
0.2
50
0. 18 32
0.6
19 0. 31 0.
( -Z-+-J-XTANCE CO ) MPO
N
T EN
0.4
0 0.2 0 0.3
40
O
WAVELEN G
0.2
0.3
0.4
0.5
0.6
0.7 0.8
0.9 1.0
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
10
20
0.1
S11e
0.4
0.6
2 GHz
0. 8
IC = 3 mA
0.2 8 0.2 2 -20
0
0.2
E NC TA X - AC -J -O RE --Z
0.3
(
0.
4
E IV AT
0.
5
2.0
0.6
1.8
1.6
0.7
0.8
1.4
0.9
1.2
1.0
S21e-FREQUENCY CONDITION VCE = 6 V IC = 10/3 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90 120 IC = 10 mA 60
S12e-FREQUENCY CONDITION VCE = 6 V IC = 10/3 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90 120 60
150
0.2 GHz S21e
30
150
IC = 3 mA 180 0
2GHz 4 8 12 16 20 0 180
-150
-30
-150
-120 -90
-60
-120 -90
4
4.0
)
3.
0
0.
32
0.
18 0 -5
3 0.3 7
0.1
-6
4 0.3 6 0.1
0
0.35 0.15 -70
0.36 0.14 -80
1.0
IC = 3 mA
0.6
1.
0.2 GHz
-4 0
S12e
0.2 GHz 0
20
IC = 10 mA
0.2 GHz
-10
10
50
REACTANCE COMPONENT R ---- 0.2 ZO
(
)
5.0
0.8
0.37 0.13
0.4
0.4
2 GHz
0 1.
0.8
0.6
0.2
0.2
-90
0.38 0.12
0.39 0.11 -100
0.40 0.10
-11
0
0.4 1 0.0 9
-1 2
0.4 0.0 2 8 0
NE G
-1
0. 4 0. 3 07 30
0.
4
0.6
3.
0.8
0
1 0.2 9 0.2 30
0.3
4.0
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
1.0
6.0
0.2
10
0.1
20
50
0.25 0.25
0
S22e IC = 10 mA
0.26 0.24
0.27 0.23
0 .29 0.2 1 0.3 -3 0.2 0 0 0
0. 0. 31 19
IC = 10 mA 2GHz 30
IC = 3 mA 0.04 0.08 0.12 0.16 0.2 0
-30
-60
2SC4095
RECOMMENDED SOLDERING CONDTITIONS
The following conditions (see table below) must be met then soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different contions. TYPES OF SURFACE MOUNT DEVICE For more details, refer to our document "SMT MANUAL" (IEI-1207). 2SC4095
Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 C or below, Reflow time: 30 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limit*: None Peak package's surface temperature: 215 C or below, Reflow time: 40 seconds or below (200 C or higher), Number of reflow process: 1, Exposure limit*: None Solder temperature: Flow time: Number of reflow process: Terminal temperature: Flow time: Exposure limit*: 260 C or below, 10 seconds or below, 1, Exposure limit*: None 300 C or below, 3 seconds or below, None Symbol IR30-00-1
VPS
VP15-00-1
Wave soldering
WS60-00-1
Partial heating method
*: Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for "Partial heating method".
5
2SC4095
[MEMO]
6
2SC4095
[MEMO]
7
2SC4095
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5
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