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| Datasheet File OCR Text: |
| PROCESS CPS165 Silicon Controlled Rectifier 35 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization Glass Passivated Mesa 165 x 165 MILS 8.7 MILS 131 x 91 MILS 31 x 31 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A GEOMETRY GROSS DIER PER 4 INCH WAFER 376 PRINCIPAL DEVICE TYPES CS220-35M Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006) |
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