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| Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 6.90.1 (0.4) 2.50.1 (1.0) (1.0) 3.50.1 2.00.2 2.40.2 (1.5) (1.5) s Features q q High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. R 0.9 R 0.7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 3 50 400 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Collector 3:Emitter 3 1.00.1 (0.85) 1.250.05 0.450.05 0.550.1 2 (2.5) 1 (2.5) M-A1 Package s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Power gain Common base reverse transfer capacitance Common emitter reverse transfer capacitance Base time constant (Ta=25C) Symbol VCBO VEBO hFE VBE fT* PG Crb Cre rbb' * CC Conditions IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 10V, IE = -2mA VCB = 10V, IE = -2mA VCB = 10V, IE = -15mA, f = 200MHz VCB = 10V, IE = -1mA, f = 100MHz VCB = 6V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 31.9MHz 600 min 30 3 25 720 1200 20 0.8 1.5 25 1600 mV MHz dB pF pF ps typ max Unit V V *f T Rank classification Rank fT T 600 ~ 1300 S 900 ~ 1600 4.10.2 4.50.1 Publication date: August 2002 SJC00120AED 1 2SC2636 PC -- Ta 500 24 Ta=25C IB=300A 20 20 250A 16 200A 12 IC -- VCE 24 IC -- I B VCE=10V Ta=25C Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 18 400 16 300 150A 12 200 8 100A 8 100 4 50A 4 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 150 300 450 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE 400 VCE=10V Ta=25C 350 50 60 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C VCE=10V VCE(sat) -- IC IC/IB=10 Collector current IC (mA) Ta=75C 40 Base current IB (A) 300 250 200 150 100 50 0 0 0.6 1.2 1.8 -25C 30 20 Ta=75C 25C 0.1 -25C 0.03 0.01 0.1 10 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 240 VCE=10V 1600 1400 fT -- I E Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) VCE=10V 6V 2.0 1200 1000 800 600 400 200 160 Ta=75C 120 25C -25C 1.6 1.2 80 0.8 40 0.4 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 -1 -3 - 10 - 30 - 100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 SJC00120AED 2SC2636 Zrb -- IE 120 40 f=2MHz Ta=25C 100 35 f=100MHz Rg=50 Ta=25C PG -- IE 12 NF -- IE VCE=10V f=100MHz Rg=50k Ta=25C Reverse transfer impedance Zrb () 10 VCE=10V 6V 80 Noise figure NF (dB) -100 Power gain PG (dB) 30 25 20 15 10 5 0 - 0.1 - 0.3 8 60 6 40 4 20 VCE=6V 10V 2 0 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 -30 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) bib -- gib 0 0 brb -- grb 48 yrb=grb+jbrb VCB=10V 200 300 500 bfb -- gfb Forward transfer susceptance bfb (mS) yfb=gfb+jbfb VCB=10V 40 f=200MHz IE=-5mA 32 -2mA 24 500 600 16 300 yib=gib+jbib VCB=10V Input susceptance bib (mS) -10 -20 IE=-2mA f=900MHz -5mA 600 500 300 200 Reverse transfer susceptance brb (mS) - 0.4 - 0.8 600 -1.2 f=900MHz -2mA -1.6 IE=-5mA -30 -40 -50 -2.0 8 900 -60 0 10 20 30 40 50 -2.4 -1.0 - 0.8 - 0.6 - 0.4 - 0.2 0 0 -60 -40 -20 0 20 40 Input conductance gib (mS) Reverse transfer conductance grb (mS) Forward transfer conductance gfb (mS) bob -- gob 12 yob=gob+jbob VCE=10V 900 Output susceptance bob (mS) 10 600 IE=-2mA 6 500 -5mA 8 4 300 2 f=200MHz 0 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) SJC00120AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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