Part Number Hot Search : 
C3372 K1536CT AD8804 DSPIC3 FST3135 4001B 448640 TA0706A
Product Description
Full Text Search
 

To Download IRF9230 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Semiconductor
IRF9230, IRF9231, IRF9232, IRF9233
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
Description
These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly Developmental type TA17512.
January 1998
Features
* -5.5A and -6.5A, -150V and -200V * rDS(ON) = 0.8 and 1.2 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol Ordering Information
D
PART NUMBER IRF9230 IRF9231 IRF9232 IRF9233
PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA
BRAND IRF9230 IRF9231 IRF9232 IRF9233
S G
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1997
File Number
2226.1
6-1
IRF9230, IRF9231, IRF9232, IRF9233
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF9230 -200 -200 -6.5 -4.0 -26 20 75 0.6 500 -55 to 150 300 260 IRF9231 -150 -150 -6.5 -4.0 -26 20 75 0.6 500 -55 to 150 300 260 IRF9232 -200 -200 -5.5 -3.5 -22 20 75 0.6 500 -55 to 150 300 260 IRF9233 -150 -150 -5.5 -3.5 -22 20 75 0.6 500 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . VDGRVGS Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to TJ = 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = -250A, VGS = 0V, (Figure10) -200 -150 VGS(TH) IDSS VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC -2 -4 -25 -250 V V V A A MIN TYP MAX UNITS
Drain to Source Breakdown Voltage IRF9230, IRF9232 IRF9231, IRF9233 Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) IRF9230, IRF9231 IRF9232, IRF9233 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF9230, IRF9231 IRF9232, IRF9233 Forward Transconductance (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON) MAX, VGS = -10V, (Figure 7)
-6.5 -5.5
-
100
A A nA
IGSS rDS(ON)
VGS = 20V ID = -3.5A, VGS = -10V, (Figures 8, 9)
-
gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A, (Figure 12) VDD = 0.5 x Rated BVDSS, ID -6.5A, RG = 50, VGS = -10V, (Figure 17, 18) RL = 14.7 for VDSS = 200V RL = 10.9 for VDSS = 150V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 2.2
0.5 0.8 3.5
0.8 1.2 -
S
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge
-
30 50 50 40 31
50 100 100 80 45
ns ns ns ns nC
-
18 13
-
nC nC
6-2
IRF9230, IRF9231, IRF9232, IRF9233
Electrical Specifications
PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
TEST CONDITIONS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
MIN -
TYP 550 170 50 5.0
MAX -
UNITS pF pF pF nH
Internal Source Inductance
LS
-
12.5
-
nH
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
RJC RJA Typical Socket Mount
-
-
1.67 60
oC/W oC/W
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX -6.5 -26
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
VSD trr QRR
TC = 25oC, ISD = -6.5A, VGS = 0V, (Figure 13) TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/s TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/s
-
400 2.6
-1.5 -
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25, peak IAS = 6.5A (Figures 15, 16).
6-3
IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A)
Unless Otherwise Specified
-10
-8
-6
IRF9230, IRF9231
0.6 0.4
-4 IRF9232, IRF9233 -2
0.2 0.0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 150
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W)
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE PDM
0.01 10-5
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 10-1 1 10
t1 t2
10-4
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-100 IRF9230, 1 ID, DRAIN CURRENT (A) IRF9232, 3 -10 IRF9230, 1 IRF9232, 3 1ms -1 10ms 100ms DC TC = 25oC TJ = MAX RATED IRF9231, 3 IRF9230, 2 -1000 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A)
-15 VGS = -10V -12
VGS = -9V VGS = -8V VGS = -7V 80s PULSE TEST
10s 100s
-9 VGS = -6V
-6
-3
VGS = -5V VGS = -4V
-0.1 -1
0
-10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V)
0
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
6-4
IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves
-15 ID(ON), ON-STATE DRAIN CURRENT (A) 80sPULSE TEST -12 VGS = -10V VGS = -9V -9 VGS = -8V VGS = -7V VGS = -6V
Unless Otherwise Specified (Continued)
-15 80s PULSE TEST VDS I D(ON) x rDS(ON) MAX -12 TJ = 125oC TJ = 25oC TJ = -55oC
ID, DRAIN CURRENT (A)
-9
-6
-6
-3
VGS = -5V VGS = -4V
-3
0
0
-2
-4
-6
-8
-10
0 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
DRAIN TO SOURCE ON RESISTANCE ()
2.0 2.0s PULSE TEST 1.6 NORMALIZED DRAIN TO SOURCE ON RESISTANCE
2.5 VGS = -10V, ID = -2.0A 2.0
1.2 VGS = - 10V 0.8 VGS = - 20V
1.5
1.0
0.4
0.5
0
0
-5
-10 -15 ID, DRAIN CURRENT (A)
-20
-25
0 -40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.15
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
2000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1600 C, CAPACITANCE (pF)
1.05
1200
0.95
800
CISS
0.85
400 CRSS
COSS
0.75 -40
0
40
80
120
160
0
0
-10
-20
-30
-40
-50
TJ , JUNCTION TEMPERATURE (oC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6-5
IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves
7.0 gfs, TRANSCONDUCTANCE (S) 80s PULSE TEST VDS > ID(ON) x rDS(ON)MAX TJ = -55oC 4.2 TJ = 25oC TJ = 125oC ISD, DRAIN CURRENT (A) 5.6 TJ = 150oC
Unless Otherwise Specified (Continued)
-100
-10
2.8
-1.0
TJ = 25oC
1.4
0
0
-3
-6
-9
-12
-15
-0.1 -0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
I D , DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0 VGS, GATE TO SOURCE VOLTAGE (V)
ID = -6.5A FOR TEST CIRCUIT SEE FIGURES 19, 20
-5
-10 IRF9230, IRF9232 VDS = -160V VDS = -100V VDS = -40V -15 0 8 16 24 32 Qg(TOT), TOTAL GATE CHARGE (nC) 40
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
6-6
IRF9230, IRF9231, IRF9232, IRF9233 Test Circuits and Waveforms
VDS tAV 0 VARY tP TO OBTAIN REQUIRED PEAK IAS RG
L
+
VDD
0V VGS
DUT tP IAS 0.01 VDD IAS tP BVDSS VDS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL 0 10%
tOFF td(OFF) tf 10%
DUT VGS RG
VDD
+
VDS VGS 0
90%
90%
10% 50% PULSE WIDTH 90% 50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
-VDS (ISOLATED SUPPLY)
0 VDS
DUT 12V BATTERY 0.2F 50k 0.3F Qgs D G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT Qgd
VGS
Qg(TOT) VDD
IG(REF)
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
6-7


▲Up To Search▲   

 
Price & Availability of IRF9230

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X