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GaAs MMIC
Preliminary Datasheet
* Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 , simple output match
ESD: Electrostatic discharge sensitive device, observe handling precautions!
CGY 181
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Type
Marking
Ordering code (8-mm taped)
Package 1)
CGY 181
CGY 181
Q68000-A8883
MW 12
Maximum ratings Characteristics Positive supply voltage Negative supply voltage 2) Supply current Channel temperature Storage temperature RF input power Total power dissipation (Ts 81 C)
Ts: Temperature at soldering point
Symbol VD VG
max. Value 9 -8 2 150 -55...+150 25 5
Unit V V A C C dBm W
ID TCh Tstg Pin Ptot
Thermal Resistance Channel-soldering point
RthChS
14
K/W
1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines 2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR 0V
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GaAs MMIC
CGY 181
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Functional block diagramm:
VG (1) VD1 (7) VD2 (11)
Short description of CGY181 operation:
A negative voltage between -4V to -6V (stabilization not necessary) has to be connected to the VG-pin, a positive supply voltage has to be applied to the VD-pins. The VTR-pin has to switched to 0V (GND) during transmit operation. The MMIC CGY181 is self-biased, the operating current is adjusted by the internal control circuit. In receive mode the VTR-pin is not
VTR (2)
Control Circuit
Pin (8) Pout (11)
GND1 (6,9)
GND2 (3, 4, 5, 10)
connected (shut off mode).
Pin # 1 2 3,4,5,10 6,9 7 8 11 12 VG VTR GND 2 GND 1 VD1 RFin VD2,RFout -
Configuration Negative voltage at control circuit (-4V...-8V) Control voltage for transmit mode (0V) or receive mode (open) RF and DC ground of the 2nd stage RF and DC ground of the 1st stage Positive drain voltage of the 1st stage RF input power Positive drain voltage of the 2nd stage, RF output power not connected
DC characteristics Characteristics
Drain current
Symbol Conditions
VD=3V, VG=0V, VTR n.c.
min
0.6 2.4
typ
0.9 3.5 1.0
max
1.2 4.8
Unit
A A A
stage 1 IDSS1 stage 2 IDSS2
Drain current with active current control Transconductance (stage 1 and 2) Pinch off voltage
ID gfs1 gfs2 Vp
VD=3V, VG=-4V, VTR=0V VD=3V, ID=350mA VD=3V, ID=700mA VD=3V, ID<500A (all stages) 0.28 1.1 -3.8
0.32 1.3 -2.8
-1.8
S S V
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GaAs MMIC
Electrical characteristics
CGY 181
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(TA = 25C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.6V, VG =-4V, VTR pin connected to ground, unless otherwise specified)
Characteristics Supply current
Pin= 0 dBm
Symbol
min 14.5 17.5 30.5 33.5 -
typ 1.2 2 400 10 20.5 15.5 18.5 31.5 34.5 37 35 -44.8 -70 -45.1 -75 1.9:1 41 44
max 3 -
Unit A mA A A dB dB dB dBm dBm % % dBc dBc
IDD IG ID IG G G G P0 P0

Negative supply current (normal operation) Shut-off current VTR n.c. Negative supply current (shut off mode, VTR pin n.c.) Small signal gain Pin = -5dBm Power Gain
VD=3.6V, Pin = 16 dBm
Power Gain
VD=5V, Pin = 16 dBm
Output Power
VD=3.6V, Pin = 16 dBm
Output Power
VD=5V , Pin = 16 dBm
Overall Power Added Efficiency
VD=3.6V, Pin = 16 dBm
Overall Power Added Efficiency
VD=5V, Pin = 16 dBm
Harmonics (Pin =16dBm) 2f0 VD=3.6V (Pout=31.85dBm) 3f0 Harmonics (Pin =16dBm) 2f0 VD=5V (Pout=31.85dBm) 3f0 Input VSWR VD=3.6V Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; VD = 3.6V
IP3 IP3
dBm dBm
Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; VD = 5V
All RF-measurements were done in a pulsed mode with a duty cycle of 10% (ton=0.33ms)!
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GaAs MMIC
CGY 181
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DC-ID(VG) characteristics - typical values of stage 1, VD=3V
1,2 High current Medium current Low current 0,8 1 ID [A] 0,6 0,4 0,2 0 -5 -4,5 -4 -3,5 -3 -2,5 VG [V] -2 -1,5 -1 -0,5 0
DC-Output characteristics - typical values of stage 1
0,8
VG=-0.25 V
0,7
-0.50 V
0,6
Ptot=1.25 W
-0.75 V
0,5 ID [A]
-1.00 V -1.25 V -1.50 V -1.75 V
0,4
0,3
0,2
-2.00 V
0,1
-2.25 V
0 0 0,5 1 1,5 2 2,5 3 VD [V] 3,5 4 4,5 5 5,5 6
Pin 2 ( VTR ) has to be open during measuring DC-characteristics!
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GaAs MMIC
CGY 181
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DC-ID(VG) characteristics - typical values of stage 2, VD=3V
4,5 High current Medium current Low current 3,5 3 2,5 2 1,5 1 0,5 0 -5 -4,5 -4 -3,5 -3 -2,5 VG [V] -2 -1,5 -1 -0,5 0 ID [A] 4
DC-Output characteristics - typical values of stage 2
3
VG=-0.50 V
2,5
-0.75 V
2
Ptot=3.75 W
-1.00 V -1.25 V -1.50 V
ID [A]
1,5
1
-1.75 V -2.00 V
0,5
-2.25 V -2.50 V
0 0,5 1 1,5 2 2,5 3 VD [V] 3,5 4 4,5 5 5,5 6
0
Pin 2 ( VTR ) has to be open during measuring DC-characteristics!
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GaAs MMIC
Pout and PAE vs. Pin
CGY 181
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( VD=3.6V,VG=-4V,f=1.75GHz, pulsed with a duty cycle of 10%, ton=0.33ms )
40 35 30 40 35 30 25 20 15 10 Pout [dBm] 5 0 -5 0 5 10 15 20 PAE [%] 5 0
Pout [dBm]
20 15 10
Pin [dBm]
Pout and PAE vs. Pin
( VD=5V,VG=-4V,f=1.75GHz, pulsed with a duty cycle of 10%, ton=0.33ms )
40 35
35
30
30
25
Pout [dBm]
25
20
20
15
15 Pout [dBm] 10 PAE [%]
10
5
5 -5 0 5 10 15 20
0
Pin [dBm]
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PAE [%]
PAE [%]
25
GaAs MMIC
CGY 181
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Output power at different temperatures
(VD=3.6V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
Pout [dBm]
T=-20C T=+20C T=+70C
Pin [dBm]
Power added efficiency at different temperatures
( VD=3.6V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
45 40 35 30
PAE [%]
25 20 15 10 5 0 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
T=-20C T=+20C T=+70C
Pin [dBm]
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GaAs MMIC
CGY 181
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Output power at different temperatures
(VD=5V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 -6 -4 -2 0 2 4 6 8 10 12 14
Pout [dBm]
T=-20C T=+20C T=+70C
16
18
20
Pin [dBm]
Power added efficiency at different temperatures
( VD=5V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
40
35
30
PAE [%]
25
20
15
10
T=-20C T=+20C T=+70C
5
0 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
Pin [dBm]
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GaAs MMIC
CGY 181
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Measured S-parameter at VD=3.6V and Pin=16dBm
(VG=-4V, VTR connected to ground, pulsed with a duty cycle of 10%, ton=0.33ms)
30 25 20 15
MAG [dB]
10 5
MAG [S11]
0
MAG [S21]
-5 -10 -15 -20 1400
1500
1600
1700
1800
1900
2000
2100
f [MHz]
Measured S-parameter at VD=5V and Pin=16dBm
(VG=-4V, VTR connected to ground, pulsed with a duty cycle of 10%, ton=0.33ms)
30 25 20 15
MAG [dB]
10 5 0 -5 -10 -15 -20 1400
MAG [S11] MAG [S21]
1500
1600
1700
1800
1900
2000
2100
f [MHz]
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GaAs MMIC
Pout vs. VD
CGY 181
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( VG=-4V,f=1.75GHz, Pin=16dBm,pulsed with a duty cycle of 10%, ton=0.33ms)
37 36 35
Pout [dBm]
34 33 32 31 30 29 28 2,5 3 3,5 4 4,5 5 5,5 6
VD [V]
Performance of internal bias control circuit @VD=3V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
4,0 3,5 3,0 2,5 ID [A] 2,0 1,5 1,0 0,5 0,0 1,0 1,5 2,0 2,5 3,0 3,5 -VG [V] 4,0 4,5 5,0 5,5 6,0 High current Medium current Low current
Performance of internal bias control circuit @VD=5V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
3,5 3,0 2,5 ID [A] 2,0 1,5 1,0 0,5 0,0 1,0 1,5 2,0 2,5 3,0 3,5 -VG [V] 4,0 4,5 5,0 5,5 6,0 High current Medium current Low current
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GaAs MMIC
Total Power Dissipation Ptot=f(TS)
CGY 181
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Permissible pulse load Ptot_max/Ptot_DC = f(t_p)
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GaAs MMIC
CGY181 application board:
Part Type
CGY181 1nF 1nF 1nF 1p2 47 43nH
CGY 181
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Description:
Siemens GaAs-MMIC Capacitor SMD 0805 Capacitor SMD 0805 Capacitor SMD 0805 Capacitor SMD 0805 Capacitor SMD Tantal Coilcraft SMD Spring Inductor B10T (distributed by Ginsbury Electronic GmbH Am Moosfeld 85, D-81829 Munchen Tel.: 089/45170-223)
Layout size is 30mm x 26mm.
Principal circuit: VG
1nF 43nH
VG (1) VD1 (7) VD2 (11)
Original Size: +VD
1nF 4.7uF
VTR (2)
VTR
1nF
Control Circuit
IN
Pin (8)
Pout (11)
OUT
1.2pF
GND1 (6, 9)
GND2 (3, 4, 5, 10)
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GaAs MMIC
CGY 181
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Emissions due to GMSK modulation:
Measurement was done with the following equipment:
negative supply voltage
-4V
Pulsed Power Supply
Trigger
VD=3.6V pulsed with a duty cycle of 10%
gate delay 150us gate length 75us
ton=0.577ms
VG
PCN Signal Generator
ROHDE&SCHWARZ SME03
VD
Pin=16dBm
IN
CGY181
VTR
OUT
Spectrum Analyzer
HP 8561E
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GaAs MMIC
APPLICATION - HINTS
1. CW - capability of the CGY181
CGY 181
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Proving the possibility of CW - operations there must be known the total power dissipation of the device. This value can be found as a function of temperature in the datasheet (page 12). The CGY181 has a maximum total power dissipation of Ptot = 5 W. As an example we take the operating point with a drain voltage VD = 3.6 V and a typical drain current of ID=1.2A. So the maximum DC - power can be calculated to: PDC = VD I D = 4. 32W . This value is smaller than 5W and CW - operation is possible. By decoupling RF power out of the CGY181 the power dissipation of the device can be further reduced. Assuming a power added efficiency PAE of 35 % the total power dissipation Ptot can be calculated using the following formula:
P = P (1 - PAE ) = 4. 32W (1 - 0. 35) = 2.808W
tot DC
2. Operation without using the internal current control If you don' t want to use the internal current control, it is recommended to connect the negative gate voltage at pin 2 (VTR) instead of pin 1 (VG). In that case VG is not connected. 3. Biasing and use considerations Biasing should be timed in such a way the that gate voltage (VG) is always applied before the drain voltages (VD), and when returning to the standby mode, the drain voltages have be removed before the gate voltage.
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