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(IPD)
MIP2E3DMY
MOS
I
2.80.2 1.50.2
Unit : mm
10.50.5 9.50.2 8.00.2
6.70.3
* *
4.50.2 1.40.1
I
15.40.3
3.70.2
I
Ta = 25C 3C
13.50.5 4.20.3 Solder Dip
1.40.1
(9.3)
2.50.2 0.6 +0.1 -0.2
0.80.1
VD VC ID IDP IC Tch Tstg
700 10 1.15 1.60 0.1 150 -55 +150
V V A A A C C
2.540.3 5.080.5
123
1 : Control 2 : Source 3 : Drain TO-220-A1 Package
: MIP2E3DMY
I
Control 1 3
Drain
S R
Q Q MOSFET
Max Duty Clock Sawtooth
S V-I R
Q Q
2
Source
2.80.2
*
: 2001
8
SLB00045AJD
1
MIP2E3DMY
I TC = 25C 2C
fOSC MAXDC PWM
* *
VC = VC(CNT) - 0.2 V VC = VC(CNT) - 0.2 V
90 66
100 69 11 40
110 72
kHz % dB mA/s
GPWM m VC < VC(ON) VC = VC(CNT) - 0.2 V
IC(SB) IC(OP) VC(ON) VC(OFF) / VC TSW / TTIM fTIM IC(CHG) VC(CNT)
*
0.05 0.7 5.1 4.1 0.5
0.30 1.8 6.0 5.0 1.0 2 0.5
0.6 2.7 6.6 5.5 1.5
mA mA V V V % Hz
VC = 0 V VC = 5 V
-2.5 -2.0 5.7
-1.9 -1.2 6.2 10
-1.2 - 0.5 6.6
mA
V mV V
VC(CNT) VD(MIN) ILIMIT 36
0.9
1.0 0.25 0.1
1.1
A s s C
* * * *
ton(BLK) td(OCL) TOTP VC reset RDS(ON) IDSS VDSS tr tf
* *
130 2.3 ID = 0.2 A VDS = 650 V, VC = 6.5 V ID = 0.25 mA, VC = 6.5 V 700
140 3.3 4.2
V A V s s C/W C/W
8.5 10
10.0 250
0.1 0.1 3.0 70
Rth(ch-c) Rth(ch-a)
) *:
2
SLB00045AJD
(1) (2) (3) -- ( )
-- (4)
(
)
(5)
(6) ) (7)
(
IPD
(1) (2) Power Integrations () IPD (3) (4) ( ) (1), (2) IPD (3) MIP501~MIP515, MIP704~MIP709 MIP805 IPD IPD ( ) IPD
IPD
MIP13* MIP14* MIP15* MIP16* MIP17* MIP18* MIP01* MIP02** MIP2** MIP30* MIP2E*
IPD ( 50% ) ( ( ( ) ) ) I EL IPD
MIP10* MIP814~816 MIP11* MIP803/MIP804/MIP806 MIP501~515 MIP704~709 MIP805 () G 105-8586
(
50%
)
/ IPD EL IPD DC/DC IPD Power Integrations 1 30 ( 6 ) TEL (03) 3459-9270
(
A.
)
B. C.
2001 MAR

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