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| 2SK3050 Transistors Small switching (600V, 2A) 2SK3050 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. External dimensions (Unit : mm) 1.50.3 6.50.2 5.1 +0.2 -0.1 C0.5 2.3 +0.2 -0.1 0.50.1 5.5 +0.3 -0.1 0.75 0.9 0.650.1 0.50.1 2.30.2 2.30.2 1.00.2 2.5 9.50.5 0.9 1.5 Structure Silicon N-channel MOSFET ROHM : CPT3 EIAJ : SC-63 (1) (2) (3) (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP PD Tch Tstg Limits 600 30 2 6 2 6 20 150 -55 to +150 Unit V V A A A A W C C Total power dissipation (Tc=25C) Channel temperature Storage temperature Pw10s, Duty cycle1% Packaging specifications Package Code Type Basic ordering unit (pieces) Taping TL 2500 2SK3050 1/4 2SK3050 Transistors Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf trr Qrr Min. - 600 - 2.0 - 0.5 - - - - - - - - - Typ. - - - - 4.4 1.0 280 48 16 12 17 29 105 460 2.0 Max. 100 - 100 4.0 5.5 - - - - - - - - - - Unit nA V A V S pF pF pF ns ns ns ns ns C Test Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=1A, VGS=10V ID=1A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1A, VDD 300V VGS=10V RL=300 RG=10 IDR=2A, VGS=0V di/dt=100A/s Electrical characteristic curves 10 5 ea ar ) is on th S( in RD n tio by ra d pe ite O lim is 2.0 5 Ta=25C Pulsed s 0 s 10 s 1m m on 00 ati =1 per PW O C D 10 VGS=10V 2 VDS=10V Pulsed DRAIN CURRENT : ID (A) 2 1 0.5 0.2 0.1 0.05 DRAIN CURRENT : ID (A) 1.6 6V DRAIN CURRENT : ID (A) m s 1 0.5 Ta= -25C 25C 75C 125C 1.2 5.5V 0.8 5V 0.2 0.1 0.05 0.02 0 0.4 4.5V 0.02 Tc=25C Single pulse 0.01 12 5 10 20 50 100 200 500 1000 0 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Maximum safe operating area Fig.2 Typical output characteristics Fig.3 Typical transfer characteristics GATE THRESHOLD VOLTAGE : VGS(th) (V) 6 5 4 3 2 1 0 -50 -25 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=10V lD=1mA 100 VGS=10V Pulsed Ta=125C 75C 9 8 7 6 ID=2A Ta=25C Pulsed 20 25C -25C 10 5 5 4 3 0 1A 2 0 25 50 75 100 125 150 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 5 10 15 20 25 30 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate threshold voltage vs. channel temperature Fig.5 Static drain-source on-state resistance vs. drain current Fig.6 Static drain-source on-state resistance vs. gate-source voltage 2/4 2SK3050 Transistors FORWARD TRANSFER ADMITTANCE : |YfS| (S) REVERSE DRAIN CURRENT : IDR (A) 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=10V Pulsed 2 5 2 1 0.5 0.2 0.1 0.05 0.02 0 VDS=10V Pulsed Ta=-25C 25C 75C 125C VGS=0V Pulsed 1 0.5 10 Ta=125C 75C 25C -25C ID=2A 0.2 5 1A 0.1 0.05 0 -50 -25 0 25 50 75 100 125 150 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.9 Reverse drain current vs. source-drain voltage ( ) 5 REVERSE DRAIN CURRENT : IDR (A) Ta=25C Pulsed 0V CAPACITANCE : C (pF) 1000 500 5000 2000 Ciss SWITCHING TIME : t (ns) 2 1 0.5 VGS=10V 200 100 50 20 10 5 VGS=0V 2 Pulsed 1000 500 200 100 50 20 10 Ta=25C VDD=300V VGS=10V RG=10 Pulsed Coss tf td(off) tr 0.5 1 0.2 0.1 0.05 0 Crss Ta=25C f=1MHz td(on) 2 5 10 20 0.5 1.0 1.5 0.5 1 2 5 10 20 50 100 200 500 1000 0.05 0.1 0.2 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) Fig.10 Reverse drain current vs. source-drain voltage ( ) Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics 500 DRAIN-SOURCE VOLTAGE : VDS (V) 14 VDS VDD=400V VGS 400 12 10 300 350V 100V REVERSE RECOVERY TIME : trr (ns) GATE-SOURCE VOLTAGE : VGS (V) Ta=25C ID=2A Pulsed 5000 Ta=25C di/dt=100A/s VGS=0V 2000 Pulsed 1000 500 VDD=100V 8 350V 200 6 4 400V 200 100 50 0.05 0.1 0.2 100 2 0 0 0 16 2 3 4 5 10 12 14 0.5 1 2 5 10 TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A) Fig.13 Dynamic input characteristics Fig.14 Reverse recovery time vs. reverse drain current 3/4 2SK3050 Transistors 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 Tc=25C th(ch-c) (t)=r(t) * th(ch-c) th(ch-c)=6.25C/W 0.01 0.01 Single pulse PW T 0.001 10 D=PW T 100 1m 10m 100m 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized transient thermal resistance vs. pulse width Switching characteristics measurement circuit Pulse width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td(off) tf toff VDD td(on) ton tr Fig.16 Switching time measurement circuit Fig.17 witching time waveforms IG=2mA RG VGS ID D.U.T. RL VDS VDD Fig.18 Gate charge measurement circuit 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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