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| PT4110/PT4110F PT4110/PT4110F s Features 1. Compact and thin flat package 2. Wide beam angle (Half intensity angle : 70 ) 3. Visible light cut-off type available ( PT4110F ) Side View and Thin Flat Type Phototransistors s Outline Dimensions 1.8 MAX. 0.3 Gate burr (Unit : mm) 2 - C0.5 3.0 Detector center 0.7 0.7 4 1.5 4.0 4 MAX. 0.1 4 4 0.15 17.5 + 1.5 - 1.0 1 20.4 +0.3 - 0.1 2 g Epoxy resin Rugged resin MAX. 0.9 s Applications 1. Optoelectronic switches 2. Encoders (1.7) 0.3 0.45 + 0.1 - Rugged resin MAX. 0.2 2MIN. 0.5 1 2 1.4 (2.54) 6 6 1 Emitter 2 Collector g Resin type Model PT4110 Pale blue transparent epoxy resin PT4110F Black visible light cut-off epoxy resin * Tolerance : 0.2 mm * ( ) : Reference dimensions 6 2.8 6 s Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol Rating VCEO 35 V ECO 6 IC 50 PC 75 - 25 to +85 Topr Tstg - 40 to +85 260 Tsol (Ta= 25C) Unit V V mA mW C C C Soldering area *1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 1.4mm PT4110/PT4110F s Electro-optical Characteristics Parameter PT4110 Collector current PT4110F Dark current Collector-emitter saturation voltage Collector-emitter breakdown voltage Emitter-collector breakdown voltage Peak sensitivity wavelength Response time Half intensity angle *2 E e : Irradiance by CIE standard light source A (tungsten) (Ta = 25C) Symbol IC I CEO V CE(sat) BVCEO BVECO p tr tf *2 Ee Conditions = 1mW/cm 2 VCE = 5V MIN. 4.0 2.5 35 6 - TYP. 800 860 60 53 70 MAX. 25 19 1.0 1.2 - Unit mA mA A V V V nm s s Ee = 0, VCE = 10V *2 Ee = 1mW/cm 2 IC = 2.5mA IC = 0.1mA Ee = 0 IE = 0.01mA *2 Ee = 0 *2 PT4110 PT4110F Rise Time Fall Time VCE = 2V, IC = 10mA RL = 100 - Fig. 1 Collector Power Dissipation vs. Ambient Temperature 80 Fig. 2 Dark Current vs. Ambient Temperature 10 -4 5 VCE = 10V 10 -5 5 Collector power dissipation P C (mW) 70 50 40 30 20 10 0 - 25 Dark current I CEO (A) 60 10 -6 5 10 -7 5 10 -8 5 10 -9 5 10 -10 5 10 -11 5 - 25 0 25 50 75 85 100 0 25 50 75 100 Ambient temperature Ta (C) Ambient temperature Ta (C ) PT4110/PT4110F Fig. 3 Relative Collector Current vs. Ambient Temperature 175 VCE = 5V Ee = 1mW/cm2 5.0 Fig. 4-a Collector Current vs. Irradiance (PT4110) VCE=2V Ta=25C Relative collector current (%) 150 125 Collector current I C (mA) 0 25 50 75 100 2.0 100 1.0 75 50 - 25 0.5 10 - 1 2 5 1 Ambient temperature Ta (C) Irradiance E e (mW/cm2) Fig. 4-b Collector Current vs. Irradiance (PT4110F) 10.0 VCE=2V Ta=25C Fig. 5-a Collector Current vs. Collector-Emitter voltage (PT4110) 10 Ta = 25C 5.0 8 (mA) (mA) C Ee = 1m W /cm 2 Collector current I 6 Collector current I 2.0 0.75 mW /cm 2 C PC (MAX) 1.0 4 0.5m W/c m 2 0.5 0.3 10 -1 2 0.25mW/cm 2 0.1mW/cm 2 2 5 1 0 0 5 10 15 20 25 30 35 Irradiance Ee (mW/cm2) Collector-emitter voltage VCE (V) Fig. 5-b Collector Current vs. Collector-Emitter voltage (PT4110F) 10 Ta = 25C Fig. 6 Spectral Sensitivity 100 Ta = 25C 80 8 Collector current I C (mA) 6 Ee m =1 W/ cm 2 Relative sensitivity (% ) 60 PT4110 PT4110F 40 PC(MAX) 2 4 0.7 /cm 5mW 0.5mW/cm 2 2 0.25mW/cm 2 0.1mW/cm 2 20 0 0 5 10 15 20 25 30 35 0 400 500 600 700 800 900 1000 1100 Collector-emitter voltage VCE (V) Wavelength (nm) PT4110/PT4110F Fig. 7 Response Time vs. Load Resistance 1000 VCE = 2V IC = 10mA T a = 25C Test Circuit for Response Time Response time ( s) 100 tr tf VCC td Output Input RL 90% Output td ts tr tf 10% 10 ts 1 10 100 1000 5000 Load resistance RL ( ) Fig. 8 Radiation Diagram - 20 - 10 0 Relative radiant intensity (%) 180 - 30 160 140 - 40 120 100 - 50 - 60 - 70 - 80 - 90 80 60 40 20 0 10 (Ta = 25C) 20 Fig. 9 PT4110 Relative Output vs. Distance (Detector : GL4110) 100 30 10 40 Ta = 25C Relative output (%) 1 50 60 70 80 90 0.1 0.01 0.1 1 10 100 Angular displacement Distance between emitter and detector d (mm) q Please refer to the chapter "Precautions for Use". (Page 78 to 93) |
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